scholarly journals Wireless Passive Temperature Sensor Realized on Multilayer HTCC Tapes for Harsh Environment

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Qiulin Tan ◽  
Zhong Ren ◽  
Ting Cai ◽  
Chen Li ◽  
Tingli Zheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Resonant Frequency ◽  
Temperature Sensor ◽  
Screen Printing ◽  
Resonant Circuit ◽  
Spiral Inductor ◽  
Harsh Environment ◽  
Average Sensitivity ◽  
Temperature Range ◽  
Good Repeatability

A wireless passive temperature sensor is designed on the basis of a resonant circuit, fabricated on multilayer high temperature cofired ceramic (HTCC) tapes, and measured with an antenna in the wireless coupling way. Alumina ceramic used as the substrate of the sensor is fabricated by lamination and sintering techniques, and the passive resonant circuit composed of a planar spiral inductor and a parallel plate capacitor is printed and formed on the substrate by screen-printing and postfiring processes. Since the permittivity of the ceramic becomes higher as temperature rises, the resonant frequency of the sensor decreases due to the increasing capacitance of the circuit. Measurements on the input impedance versus the resonant frequency of the sensor are achieved based on the principle, and discussions are made according to the exacted relative permittivity of the ceramic and quality factor (Q) of the sensor within the temperature range from 19°C (room temperature) to 900°C. The results show that the sensor demonstrates good high-temperature characteristics and wide temperature range. The average sensitivity of the sensor with good repeatability and reliability is up to 5.22 KHz/°C. It can be applied to detect high temperature in harsh environment.

scholarly journals Development and Application of the Single-Spiral Inductive-Capacitive Resonant Circuit Sensor for Wireless, Real-Time Characterization of Moisture in Sand

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Andrew J. DeRouin ◽  
Zhanping You ◽  
Morgan Hansen ◽  
Aboelkasim Diab ◽  
Keat Ghee Ong
Keyword(s):  
Resonant Frequency ◽  
Parasitic Capacitance ◽  
Sensor Technology ◽  
Resonant Circuit ◽  
Spiral Inductor ◽  
Road Pavement ◽  
Specific Frequency ◽  
Inductive Elements ◽  
Lc Sensors

A wireless, passive embedded sensor was designed and fabricated for monitoring moisture in sand. The sensor, consisted of an inductive-capacitive (LC) resonant circuit, was made of a printed spiral inductor embedded inside sand. When exposed to an electromagnetic field, the sensor resonated at a specific frequency dependent on the inductance of the inductor and its parasitic capacitance. Since the permittivity of water was much higher than dry sand, moisture in sample increased the parasitic capacitance, thus decreasing the sensor’s resonant frequency. Therefore, the internal moisture level of the sample could be easily measured through tracking the resonant frequency using a detection coil. The fabrication process of this sensor is much simpler compared to LC sensors that contain both capacitive and inductive elements, giving it an economical advantage. A study was conducted to investigate the drying rate of sand samples of different grain sizes. The experimental data showed a strong correlation with the actual moisture content in the samples. The described sensor technology can be applied for long term monitoring of localized water content inside soils and sands to understand the environmental health in these media, or monitoring moisture levels within concrete supports and road pavement.

scholarly journals CSRR-SICW High Sensitivity High Temperature Sensor Based on Si3N4 Ceramics

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 459
Author(s):  
Shujing Su ◽  
Ting Ren ◽  
Lili Zhang ◽  
Fujia Xu
Keyword(s):  
Dielectric Constant ◽  
High Temperature ◽  
Resonant Frequency ◽  
Real Time ◽  
Temperature Sensor ◽  
Circular Waveguide ◽  
High Sensitivity ◽  
Dielectric Substrate ◽  
Test Sensitivity ◽  
High Temperature Sensor

A new type of wireless passive, high sensitivity, high temperature sensor was designed to meet the real-time temperature test in the harsh aero-engine environment. The sensor consists of a complementary split ring resonator and a substrate integrated circular waveguide (CSRR-SICW) structure and is based on high temperature resistant Si3N4 ceramic as the substrate material. Temperature is measured by real-time monitoring of the resonant frequency of the sensor. In addition, the ambient temperature affects the dielectric constant of the dielectric substrate, and the resonant frequency of the sensor is determined by the dielectric constant, so the function relationship between temperature and resonant frequency can be established. The experimental results show that the resonant frequency of the sensor decreases from 11.3392 GHz to 11.0648 GHz in the range of 50–1000 °C. The sensitivity is 123 kHz/°C and 417 kHz/°C at 50–450 °C and 450–1000 °C, respectively, and the average test sensitivity is 289 kHz/°C. Compared with previously reported high temperature sensors, the average test sensitivity is approximately doubled, and the test sensitivity at 450–1000 °C is approximately three times higher. Therefore, the proposed high sensitivity sensor has promising prospects for high temperature measurement.

Piezoelectric Ceramics for High Temperature Applications

2009 ◽  
Vol 421-422 ◽  
pp. 375-380 ◽  
Author(s):  
Yukio Higuchi ◽  
Hirozumi Ogawa ◽  
Daisuke Kuroda ◽  
Masahiko Kimura ◽  
Hiroshi Takagi ◽  
...  
Keyword(s):  
High Temperature ◽  
Resonant Frequency ◽  
Temperature Sensor ◽  
Lead Titanate ◽  
Piezoelectric Ceramics ◽  
Ceramic Materials ◽  
Templated Grain Growth ◽  
Sensor Applications ◽  
High Temperature Sensor ◽  
Titanate Lead

Ceramic materials based on lead titanate, lead niobate and bismuth layer-structured ferroelectrics (BLSF) were studied to develop piezoelectric ceramics for high temperature sensor applications. Compositional modification enabled lead titanate and lead niobate type ceramics to exhibit good piezoelectric properties at 500°C . The Curie temperature for one BLSF, CaBi4Ti4O15 was close to 800°C, though the piezoelectric constant was smaller than those of lead titanate and lead niobate ceramics. These ceramics seem to be good candidates for use as high temperature sensor materials. In addition, textured SrBi2Nb2O9 (SBN), another BLSF, ceramics with various orientation factors were fabricated through the templated grain growth (TGG) method. The resonant frequency of 76% textured SBN varied linearly with temperature and exhibited stable temperature characteristics. The temperature coefficient of the resonant frequency was –0.85 ppm/°C from –50 to 250°C, and was smaller than that of a quartz oscillator. Therefore, textured SBN ceramics are suitable for use as a resonator material when stable resonant frequency is needed in a high temperature range.

THERMOMETRY BETWEEN 10–300 K USING GaAlAs DIODE

2000 ◽  
Vol 14 (11) ◽  
pp. 393-399 ◽  
Author(s):  
S. B. OTA ◽  
SMITA OTA
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Power Law ◽  
Temperature Sensor ◽  
Lake Shore ◽  
Temperature Range

The forward characteristics of a cryogenic GaAlAs temperature sensor diode (Lake Shore Cryotronics, Inc.) have been presented in the temperature range 10–300 K and for fixed current values between 10 nA and 500 μA. The upturn in the forward characteristic below 35 K was found to shift to lower temperatures by reducing the current. The sensitivity at low temperature was found to reduce with current (I) according to a power law. The sensitivity at high temperature was found to increase linearly with decrease in lg (I).

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range

NICKELVAC L-605

Alloy Digest ◽  
1967 ◽  
Vol 16 (10) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Base Alloy ◽  
Heat Treating ◽  
Temperature Range ◽  
Temperature Performance ◽  
Cobalt Base Alloy ◽  
Cobalt Base

Abstract NICKELVAC L-605 is a double vacuum melted, cobalt-base alloy for high temperature applications. It is recommended for highly stressed parts operating in the temperature range of 1700 to 2000 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep and fatigue. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Co-53. Producer or source: Allvac Metals Company, A Teledyne Company.

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

scholarly journals A Digital Improvement—Trimming a Digital Temperature Sensor with EEPROM Reprogrammable Fuses

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1700
Author(s):  
Anca Mihaela Vasile (Dragan) ◽  
Alina Negut ◽  
Adrian Tache ◽  
Gheorghe Brezeanu
Keyword(s):  
Standard Deviation ◽  
Power Supply ◽  
Temperature Sensor ◽  
Experimental Results ◽  
Temperature Error ◽  
Thermal Sensor ◽  
Memory Cells ◽  
Temperature Range ◽  
Read Only Memory ◽  
Digital Temperature Sensor

An EEPROM (electrically erasable programmable read-only memory) reprogrammable fuse for trimming a digital temperature sensor is designed in a 0.18-µm CMOS EEPROM. The fuse uses EEPROM memory cells, which allow multiple programming cycles by modifying the stored data on the digital trim codes applied to the thermal sensor. By reprogramming the fuse, the temperature sensor can be adjusted with an increased trim variation in order to achieve higher accuracy. Experimental results for the trimmed digital sensor showed a +1.5/−1.0 ℃ inaccuracy in the temperature range of −20 to 125 ℃ for 25 trimmed DTS samples at 1.8 V by one-point calibration. Furthermore, an average mean of 0.40 ℃ and a standard deviation of 0.70 ℃ temperature error were obtained in the same temperature range for power supply voltages from 1.7 to 1.9 V. Thus, the digital sensor exhibits similar performances for the entire power supply range of 1.7 to 3.6 V.

scholarly journals High-Temperature Deformation of Naturally Aged 7010 Aluminum Alloy

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 581
Author(s):  
Abdulhakim A. Almajid
Keyword(s):  
Activation Energy ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Threshold Stress ◽  
Activation Energies ◽  
Temperature Deformation ◽  
High Temperature Range ◽  
Temperature Range ◽  
True Activation Energy ◽  
Two Temperatures

This study is focused on the deformation mechanism and behavior of naturally aged 7010 aluminum alloy at elevated temperatures. The specimens were naturally aged for 60 days to reach a saturated hardness state. High-temperature tensile tests for the naturally aged sample were conducted at different temperatures of 573, 623, 673, and 723 K at various strain rates ranging from 5 × 10−5 to 10−2 s−1. The dependency of stress on the strain rate showed a stress exponent, n, of ~6.5 for the low two temperatures and ~4.5 for the high two temperatures. The apparent activation energies of 290 and 165 kJ/mol are observed at the low, and high-temperature range, respectively. These values of activation energies are greater than those of solute/solvent self-diffusion. The stress exponents, n, and activation energy observed are rather high and this indicates the presence of threshold stress. This behavior occurred as a result of the dislocation interaction with the second phase particles that are existed in the alloy at the testing temperatures. The threshold stress decreases in an exponential manner as temperature increases. The true activation energy was computed by incorporating the threshold stress in the power-law relation between the stress and the strain. The magnitude of the true activation energy, Qt dropped to 234 and 102 kJ/mol at the low and high-temperature range, respectively. These values are close to that of diffusion of Zinc in Aluminum and diffusion of Magnesium in Aluminum, respectively. The Zener–Hollomon parameter for the alloy was developed as a function of effective stress. The data in each region (low and high-temperature region) coalescence in a segment line in each region.

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