scholarly journals Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Guangcan Luo ◽  
Bin Lv ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Jingquan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Temperature Cycle ◽  
High Carrier Concentration ◽  
Cdte Solar Cells ◽  
Photovoltaic Applications ◽  
Cell Stability ◽  
High Carrier ◽  
Uv Visible

The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

scholarly journals Synthesis and characterization of single-phase epitaxial Cr2N thin films by reactive magnetron sputtering

2018 ◽  
Vol 54 (2) ◽  
pp. 1434-1442 ◽  
Author(s):  
M. A. Gharavi ◽  
G. Greczynski ◽  
F. Eriksson ◽  
J. Lu ◽  
B. Balke ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Phase ◽  
Reactive Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Reactive Magnetron

A novel route for synthesis, characterization of molybdenum diselenide thin films and their photovoltaic applications

2012 ◽  
Vol 24 (2) ◽  
pp. 438-442 ◽  
Author(s):  
D. J. Sathe ◽  
P. A. Chate ◽  
P. P. Hankare ◽  
A. H. Manikshete ◽  
A. S. Aswar
Keyword(s):  
Thin Films ◽  
Molybdenum Diselenide ◽  
Photovoltaic Applications

Systematic Studies on Magnetron-Sputtered Indium Nitride

1992 ◽  
Vol 242 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
J. S. Morgan ◽  
T. O. Poehler ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Inert Gases ◽  
Morphological Transition ◽  
Heteroepitaxial Growth ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Nitrogen Vacancies

ABSTRACTExtensive and systematic studies on reactive magnetron sputtering of InN thin films are summarized. The films have been deposited onto several types of substrates, with variations in such process parameters as deposition temperature, partial pressures of reactive and inert gases, sputtering power and gas flows. These films have been characterized by measuring their electrical, optical, structural and morphological properties. It has been shown that epitaxial growth of InN occurs on the basal plane of single-crystal (00.1) sapphire and (001) mica substrates and on the (111) face of cubic substrates such as silicon and zirconia.Two principal problems currently limit the usefulness of thin films of InN. First, although epitaxy can be attained with the proper choice of substrate type and deposition temperature, the resulting film is an agglomerate of epitaxial grains -- not a single crystal. Second, all magnetron sputtered InN films prepared to date have low mobility and high carrier concentration (likely due to nitrogen vacancies). In an attempt to address these problems, experiments on the growth and characterization of sputtered InN films have been carried out and are discussed here with particular emphasis on seeded heteroepitaxial growth and the effects of film deposition temperature.For example, it was found early that the growth of InN on the bare surface of several crystalline substrates at growth temperatures near 350°C results in a morphological transition that causes a degradation of semiconducting properties. The predeposition of an AIN seed layer inhibits this morphological transition and stabilizes a relatively high mobility state, but a still too high carrier concentration obtains. Further progress critically depends on optimizing the seeded heteroepitaxial growth technique in conjunction with the achievement of InN films with lower density of nitrogen vacancies.

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