scholarly journals Investigation of the Optimal Parameters in Hydrothermal Method for the Synthesis of ZnO Nanorods

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Ying-Chung Chen ◽  
Huan-Yi Cheng ◽  
Cheng-Fu Yang ◽  
Yuan-Tai Hsieh
Keyword(s):  
Deposition Time ◽  
Zno Nanorods ◽  
Hydrothermal Process ◽  
Second Step ◽  
Zno Films ◽  
Optimal Parameters ◽  
X Ray Diffraction ◽  
Step Method ◽  
Si Substrates ◽  
The Face

We investigated a two-step method to deposit the ZnO-based nanostructure films, including nanorods and nanoflowers. In the first step, sputtering method was used to deposit the ZnO films on SiO2/Si substrates as the seed layer. In the second step, Zn(NO3)2–6H2O and C6H12N4were used as precursors and hydrothermal process was used as the method to synthesize the ZnO films. After that, the ZnO films were measured by an X-ray diffraction pattern and a FESEM to analyze their crystallization and morphology. We had found that the ZnO films had three different morphologies synthesized on ZnO/SiO2/Si substrates, including irregular-plate structure films, nanorod films, and beautiful chrysanthemum-like clusters (nanoflower films). We would prove that the face direction of ZnO/SiO2/Si substrates in the hydrothermal bottle and deposition time were two important factors to influence the synthesized results of the ZnO films.

scholarly journals Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 446 ◽  
Author(s):  
Ya-Fen Wei ◽  
Wen-Yaw Chung ◽  
Cheng-Fu Yang ◽  
Jei-Ru Shen ◽  
Chih-Cheng Chen
Keyword(s):  
Hydrothermal Process ◽  
Zno Nanowires ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
The Eu

ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6H2O or In(NO3)2-6H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) at%. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

scholarly journals The Synthesis and Properties of Liquid Crystalline Polyurethanes, Chemically Modified by Polyhedral Oligomericsilsesquioxanes

Molecules ◽  
2019 ◽  
Vol 24 (22) ◽  
pp. 4013 ◽  
Author(s):  
Artur Bukowczan ◽  
Edyta Hebda ◽  
Maciej Czajkowski ◽  
Krzysztof Pielichowski
Keyword(s):  
Liquid Crystalline ◽  
Second Step ◽  
Hydroxyl Groups ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Chemically Modified ◽  
Liquid Crystalline Phases ◽  
Breaking Points ◽  
First Time

In this work, we report for the first time on the influence of polyhedral oligomericsilsesquioxanes (POSS) on the structure and properties of liquid crystalline polyurethane (LCPU). LCPU/POSS hybrids were synthesized via a two-step method. In the first step, 4,4′-methylenephenyl diisocyanate (MDI) and polytetramethylene ether glycol (PTMG) reacted with functionalized trisilanolphenyl POSS (TSP-POSS) bearing three hydroxyl groups. In the second step, the growing chain was extended with 4,4′-bis(hydroxyhexoxy)biphenyl (BHHBP). FTIR measurements confirmed the chemical bonding between the POSS and LCPU matrix and showed the influence of the silsesquioxane modification on the intensity of hydrogen bonds. The DSC and POM techniques confirmed the formation of liquid crystalline phases. The incorporation of silsesquixanes into the LC matrix leads to higher melting and isotropization temperatures along with the broadening phase transition effect. Scanning electron microscopy showed a good distribution of POSS moieties, both in the bulk and on the surface of the liquid crystalline PU matrix, whereby wide-angle X-ray diffraction (WAXD) patterns revealed halos from both the liquid crystalline and unmodified polyurethane matrix. The stress at the breaking points for LCPU/POSS hybrids containing 50% and 60% of elastic segments is greater than the stress at the breaking point of the reference material (LCPU), what is due to good dispersion of POSS in less elastic matrix. Thermal properties of the LCPU/POSS materials obtained, determined by TGA, revealed that the char residue increased with the amount of POSS for 40% of elastic segments materials.

Synthesis of Vertical ZnO Nanorods on Glass Substrates by Simple Chemical Method

2009 ◽  
Vol 5 ◽  
pp. 223-230 ◽  
Author(s):  
P. Suresh Kumar ◽  
M. Yogeshwari ◽  
A. Dhayal Raj ◽  
D. Mangalaraj ◽  
D. Nataraj ◽  
...  
Keyword(s):  
Deposition Time ◽  
Zno Nanorods ◽  
Sem Analysis ◽  
Growth Behavior ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Glass Substrates ◽  
Simple Chemical ◽  
Cbd Method

ZnO nanorods (NRs) have been synthesized by a chemical bath deposition (CBD) method on simple glass substrate that had been precoated by successive ionic layer absorption and reaction (SILAR) with a thin ZnO film. ZnO NR array was obtained by using zinc acetate and hexamethylenetetramine as aqueous solutions at optimized pH concentration and deposition time. X-ray diffraction (XRD) and SEM analysis were used to confirm the growth of ZnO nanorods. The pH and deposition time of the solution was found to influence the growth behavior of ZnO NRs. PL analysis also reflected the growth behavior of ZnO NRs.

Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Florine Conchon ◽  
Pierre-Olivier Renault ◽  
Philippe Goudeau ◽  
Eric Le Bourhis ◽  
Elin Sondergard ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Annealing Temperature ◽  
Protective Coatings ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Thermally Activated ◽  
Post Deposition

AbstractResidual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.

scholarly journals The Kinetic Study of The Hydrothermal Growth of Zno Nanorod Array Films / Zno Nanostieņu Kopu Pārklājuma Hidrotermālās Augšanas Kinētikas Izpēte

2015 ◽  
Vol 52 (5) ◽  
pp. 20-27 ◽  
Author(s):  
V. Gerbreders ◽  
P. Sarajevs ◽  
I. Mihailova ◽  
E. Tamanis
Keyword(s):  
Zno Nanorods ◽  
Hydrothermal Process ◽  
Hexagonal Wurtzite Structure ◽  
Hydrothermal Growth ◽  
Solution Temperature ◽  
Zno Films ◽  
Nitrate Hexahydrate ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Kinetics Of

Abstract The simple analysis method has been introduced for the kinetic analysis of the hydrothermal growth. The zinc oxide nanorod arrays have been synthesized via a hydrothermal process. Zinc nitrate hexahydrate (Zn(NO3)2 · 6H2O) has been used as the precursor in the presence of hexamethylenetetramine (C6H12N4) for the formation of ZnO nanostructures. Long-term isothermal growth kinetics of ZnO nanorods has been investigated. The effect of the solution temperature (70-90 ℃) on the kinetics of the hydrothermal growth of ZnO nanorods has been examined. An extensive analysis by scanning electron microscopy, energy dispersive spectroscopy and x-ray diffraction has revealed that the as-synthesized ZnO nanorod arrays are well-crystalline and possessing hexagonal wurtzite structure. These ZnO films have promising potential advantages in microelectronic and optoelectronic applications.

Growth of Well-Aligned ZnO Nanorods Using AuGe Catalyst by Vapor Phase Transportation

2006 ◽  
Vol 6 (11) ◽  
pp. 3624-3627
Author(s):  
S. Y. Ha ◽  
M. N. Jung ◽  
S. H. Park ◽  
H. J. Ko ◽  
H. Ko ◽  
...  
Keyword(s):  
Deep Level ◽  
Zno Nanorods ◽  
Horizontal Tube ◽  
Deep Level Emission ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Uv Emission ◽  
Tilting Angle

Well-aligned ZnO nanorods have been achieved using new alloy (AuGe) catalyst. Zn powder was used as a source material and it was transported in a horizontal tube furnace onto an AuGe deposited Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, high resolution X-ray diffraction, and photoluminescence. ZnO nanorods grown at 650 °C on 53 nm thick AuGe layer show uniform shape with the length of 8±0.5 μm and the diameter of 150±5 nm. Also, the tilting angle of ZnO nanorods (±5.5°) is confirmed by HRXRD. High structural quality of the nanorods is conformed by the photoluminescence measurement. All samples show strong UV emission without considerable deep level emission. However, weak deep level emission appears at high (700 °C) temperature due to the increase of oxygen desertion.

Adhesion Characterization of Zinc-Substituted Hydroxyapatite Coatings

2016 ◽  
Vol 720 ◽  
pp. 189-192
Author(s):  
Marcelo Henrique Prado da Silva ◽  
Daniel Navarro da Rocha ◽  
Felipe Nobre Moura ◽  
Andrea Machado Costa ◽  
Luis Henrique Leme Louro
Keyword(s):  
Hydrothermal Process ◽  
Precursor Solution ◽  
Second Step ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydroxyapatite Coatings ◽  
Zn Concentration ◽  
Zn Content ◽  
Scratch Tests

In this study, hydroxyapatite and Zn-containing hydroxyapatite coatings were produced and characterized with respect to adhesion. The coating technique consists of a two-step hydrothermal process. X-ray diffraction (XRD) analyses showed that, in the first step, the coatings consisted of parascholzite (JCPDS-01-086-2372), a mixture of parascholzite and monetite (JCPDS-01-071-1759), or parascholzite and brushite (JCPDS-72-0713), depending on Zn concentration in the precursor solution. The second step consisted of an alkali conversion in a KOH solution. The final coating was identified as pure hydroxyapatite (HA) or Zn-doped hydroxyapatite, depending on the precursor solution Zn content. Scratch tests on the pure HA coatings showed higher adhesion, when compared to Zn-substituted HA coatings.

Thermal Residual Stress Relaxation in Sputtered ZnO Film on (100) Si Substrate Studied In Situ by Synchrotron X-Ray Diffraction

2011 ◽  
Vol 681 ◽  
pp. 127-132
Author(s):  
Christopher Krauss ◽  
Guillaume Geandier ◽  
Florine Conchon ◽  
Pierre Olivier Renault ◽  
Eric Le Bourhis ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Relaxation ◽  
Structural Changes ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Compressive Stresses ◽  
Residual Stress Relaxation

Residual stress relaxation in sputtered ZnO films has been studied in-situ by synchrotron x-ray diffraction. The films deposited on (001) Si substrates were thermally treated from 25°C to 700°C. X-ray diffraction 2D patterns were captured continuously during the heating, plateau and cooling ramps. The corrections carried out for compensating the furnace drift are discussed. We first observe an increase of the intrinsic compressive stresses before stress relaxation starts to operate around 370°C. Then, thermal contraction upon cooling dominates so that overall, the large initial compressive film stresses turn to tensile after thermal treatment. The overall behaviour is discussed in terms of structural changes induced by the heat treatment.

Sign in / Sign up

Export Citation Format

Share Document