Growth of Well-Aligned ZnO Nanorods Using AuGe Catalyst by Vapor Phase Transportation

2006 ◽  
Vol 6 (11) ◽  
pp. 3624-3627
Author(s):  
S. Y. Ha ◽  
M. N. Jung ◽  
S. H. Park ◽  
H. J. Ko ◽  
H. Ko ◽  
...  
Keyword(s):  
Deep Level ◽  
Zno Nanorods ◽  
Horizontal Tube ◽  
Deep Level Emission ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Uv Emission ◽  
Tilting Angle

Well-aligned ZnO nanorods have been achieved using new alloy (AuGe) catalyst. Zn powder was used as a source material and it was transported in a horizontal tube furnace onto an AuGe deposited Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, high resolution X-ray diffraction, and photoluminescence. ZnO nanorods grown at 650 °C on 53 nm thick AuGe layer show uniform shape with the length of 8±0.5 μm and the diameter of 150±5 nm. Also, the tilting angle of ZnO nanorods (±5.5°) is confirmed by HRXRD. High structural quality of the nanorods is conformed by the photoluminescence measurement. All samples show strong UV emission without considerable deep level emission. However, weak deep level emission appears at high (700 °C) temperature due to the increase of oxygen desertion.

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

Structural and Magnetic Properties of Co50 ± x Pt50 ± x Thin Films Prepared by Mbe Co-Evaporation on (001) MgO Substrate at Various Temperatures

1998 ◽  
Vol 517 ◽  
Author(s):  
V. Parasote ◽  
M.-C. Cadevwlle ◽  
V. Pierron-Bohnes ◽  
W. Grange
Keyword(s):  
Magnetic Properties ◽  
Linear Increase ◽  
Anisotropy Energy ◽  
Structural Quality ◽  
Main Peak ◽  
X Ray Diffraction ◽  
Thermally Activated ◽  
Theoretical Predictions ◽  
Structural And Magnetic Properties

AbstractStructural and magnetic properties of Co50 ± x Pt50± x films 25-50 nm thick, prepared by molecular beam epitaxy onto a Pt buffer grown on MgO (001) substrate have been investigated. A series of 3 samples with different compositions (x = 6, 0, -6) was grown at 800 K on a 10 nm thick Pt buffer and another series of 5 samples of equiatomic composition was prepared at various growth temperatures (390 K≤ TG≤ 780 K) on a Pt buffer 4 nm thick. X-ray diffraction and TEM studies show the presence of grains with [111] and [002] orientations, the [002] grains being a mixture of the tetragonal L10 ordered phase and of the fcc disordered one. Both the thickness of the buffer layer and the deposition temperature are determinant parameters of the structural quality of the films and of the degree of long range order (LRO). An apparent LRO parameter (ηapp) is deduced from the superstructure and main peak intensity ratio. Its increase with the growth temperature is described through a thermally activated model that yields a small activation energy of 0.28 eV, illustrating the role played by both surface diffusion and surface interactions in building the L10 compound in agreement with theoretical predictions. An average uniaxial magnetocrystalline anisotropy energy (Kuav) is deduced from the magnetization curves measured by a SQUID. The anisotropy energy of the [002] grains (Ku002) is deduced, assuming a linear relationship between the anisotropies and the phase percentages. One observes a continuous but not linear increase of Ku002 with ηapp.

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

2014 ◽  
Vol 59 (3) ◽  
pp. 315-322 ◽  
Author(s):  
A. E. Blagov ◽  
A. L. Vasiliev ◽  
A. S. Golubeva ◽  
I. A. Ivanov ◽  
O. A. Kondratev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Preparation and Spectral Properties of PVP-Modified ZnO Nanorods

2008 ◽  
Vol 368-372 ◽  
pp. 329-332 ◽  
Author(s):  
Yang Feng Huang ◽  
Han Ning Xiao ◽  
Shu Guang Chen
Keyword(s):  
Electron Microscopy ◽  
Hydrothermal Reaction ◽  
Uv Spectroscopy ◽  
Zno Nanorods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Emission ◽  
Transmission Electron ◽  
Light Region ◽  
Uv Absorption Spectrum

ZnO nanorods were prepared by a hydrothermal reaction in the presence or absence of PVP (polyvinyl pyrrolidone). The obtained products were characterized by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared, UV-Vis absorption (UV) spectroscopy and photoluminescence (PL) spectroscopy. The results suggest that PVP plays an important role in the preparation of ZnO nanorods. The UV absorption spectrum showed PVP increases the UV-shielding ability but doesn’t influence the transparency in the visible light region. A weak UV emission at 353 nm of PL spectra exhibit the surface of ZnO nanorods is passivated and oxygen-related defects is supplied by PVP.

Morphology and Photoluminescence of Zn/ZnO Core-Shell Structures by Water-Boiling Method

2013 ◽  
Vol 538 ◽  
pp. 242-245 ◽  
Author(s):  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Rui Xiong ◽  
Yuan Ming Huang
Keyword(s):  
Zno Nanorods ◽  
Sem Analysis ◽  
Shell Structures ◽  
Core Shell ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Spherical Morphology ◽  
Uv Emission ◽  
Two Peaks

Zn/ZnO core-shell structured composites were firstly synthesized by water-boiling method using induction cooker and electric cooker. The synthesized Zn/ZnO core-shell structures were characterized with X-ray diffraction (XRD), scanning electronic microscopy (SEM) and photoluminescence (PL) spectrophotometer, respectively. The XRD pattern confirms that the shells of the Zn/ZnO core-shell composites are composed of wurtzite ZnO crystals. Based on SEM analysis, the Zn/ZnO core-shell structures formed by intermittent boiling under induction cooker show a tendency for spherical morphology with stacked and bending ZnO shells while the ones formed by continuous boiling under electric cooker exhibit a spherical morphology with the irregular ZnO nanorods on the surface of Zn spheres, and the continuous boiling under electric cooker can promote the peeling and regeneration of ZnO shells on the surface of Zn cores. The PL spectra of the Zn/ZnO core-shell structures have been recorded at room temperature and observed two peaks around 379 nm and 538 nm. However, the defect emission is much stronger than the UV emission in the Zn/ZnO core-shell structures synthesized under electric cooker.

Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

2014 ◽  
Vol 116 (7) ◽  
pp. 074309 ◽  
Author(s):  
A. Simimol ◽  
N. T. Manikandanath ◽  
Aji A. Anappara ◽  
Prasanta Chowdhury ◽  
Harish C. Barshilia
Keyword(s):  
Deep Level ◽  
Zno Nanorods ◽  
Deep Level Emission

INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)

2009 ◽  
Vol 16 (01) ◽  
pp. 99-103 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Buffer Layers ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Surfaces ◽  
Gan On Si ◽  
Aln Buffer ◽  
Xrd Techniques ◽  
Substrate Temperatures

High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. Best AlN films were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

Preparation and Electrical Properties of (100) Preferred (Ba,Sr)TiO3 Bilayer Thin Films Derived from Pulse Laser Deposition Method

2007 ◽  
Vol 280-283 ◽  
pp. 849-852
Author(s):  
Sheng Guo Lu ◽  
Philip A. Friddle ◽  
Z.K. Xu ◽  
G.G. Siu ◽  
Haydn Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulse Laser Deposition ◽  
Leakage Current ◽  
Pulse Laser ◽  
Laser Deposition ◽  
Pulse Laser Deposition Method ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Si Substrates

Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Si substrates using pulse laser deposition method. A (100)preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

1996 ◽  
Vol 449 ◽  
Author(s):  
A. Saxler ◽  
M. A. Capano ◽  
W. C. Mitchel ◽  
P. Kung ◽  
X. Zhang ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
Lattice Points ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Primary Mechanism

ABSTRACTX-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00•1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00•2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

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