scholarly journals Graphene Embedded Modulator with Extremely Small Footprint and High Modulation Efficiency

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Ran Hao ◽  
Jia-Min Jin
Keyword(s):  
Extinction Ratio ◽  
Zero Point ◽  
Active Components ◽  
Silicon Waveguide ◽  
High Modulation ◽  
Small Footprint ◽  
Mach Zehnder Modulator ◽  
Optical Applications ◽  
On Chip ◽  
Modulation Speed

By embedding graphene sheet in the silicon waveguide, the overall effective mode index displays unexpected symmetry and the electrorefraction effect has been significantly enhanced near the epsilon-near-zero point. An eight-layer graphene embedded Mach-Zehnder Modulator has been theoretically demonstrated with the advantage of ultracompact footprint (4 × 2 μm2), high modulation efficiency (1.316 V·μm), ultrafast modulation speed, and large extinction ratio. Our results may promote various on-chip active components, boosting the utilization of graphene in optical applications.

scholarly journals Modelling and Analysis of a Plus-Shaped PN Junction Phase Shifter for Data Centre Applications

2021 ◽  
Vol 12 ◽  
pp. 32-37
Author(s):  
R.G. Jesuwanth Sugesh ◽  
A. Sivasubramanian
Keyword(s):  
High Speed ◽  
Phase Shifter ◽  
Simulation Analysis ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Travelling Wave ◽  
Data Centre ◽  
Pn Junction ◽  
High Modulation ◽  
Mach Zehnder Modulator

Scaling up of photonic devices is the current research of interest to meet the alarming demand growth in the data centres. The efficiency of the modulator is determined by the performance of the phase shifter. In this paper, a plus-shaped PN junction phase shifter is designed and analysed. This design improved the modulation efficiency and reduced optical loss for high-speed data operation. The width of the P doped region and thickness of thedoped regions in the slabs are varied to obtain high modulation efficiency. The circuit-level simulation analysis was performed on the proposed phase shifterimported in a travelling wave electrode silicon Mach Zehnder modulator. At 80 Gbps, a maximum extinction ratio of 12.39 dB with a bit error rate of 8.67×10-8 was obtained at VπLπ of 1.05 V.cm for the length of the phase shifter of 3.5 mm. The calculated intrinsic 3 dB bandwidth is ~38 GHz and the energy per bit transmission is 1.71pJ/bit.Further analysis was performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.

scholarly journals Optical Modulator using Ultra-Thin Silicon Waveguide in SOI Hybrid Technology

2021 ◽  
Author(s):  
Ahmed B. Ayoub ◽  
Mohamed Swillam
Keyword(s):  
Extinction Ratio ◽  
Active Material ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Organic Polymer ◽  
Optical Modulator ◽  
Silicon Waveguide ◽  
Wide Range ◽  
Thin Silicon ◽  
On Chip

Abstract We propose a detailed study of an on-chip optical modulator using a non-conventional silicon-based platform. This platform is based on the optimum design of ultra-thin silicon on insulator (SOI) waveguide. This platform is characterized by low field confinement inside the core waveguide and high sensitivity to the cladding index. Accordingly, it lends itself to a wide range of applications, such as sensing and optical modulation. By employing this waveguide into the Mach-Zehnder interferometer (MZI) configuration, an efficient optical modulator is reported using an organic polymer as an active material for the electro-optic effect. An extinction ratio of more than 20 dB is achieved with energy per bit of 13.21 fJ/bit for 0.5 V applied voltage. This studied platform shows promising and adequate performance for modulation applications. It is cheap and easy to fabricate.

scholarly journals Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 157 ◽  
Author(s):  
Yin Xu ◽  
Feng Li ◽  
Zhe Kang ◽  
Dongmei Huang ◽  
Xianting Zhang ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Modulation Depth ◽  
Polarization State ◽  
Broad Bandwidth ◽  
Graphene Layers ◽  
Silicon Waveguide ◽  
High Modulation ◽  
Polarization Insensitive ◽  
On Chip ◽  
Silicon Based

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects.

scholarly journals Performance analysis of carrier depletion silicon PIN phase shifter

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri
Keyword(s):  
Performance Analysis ◽  
Bit Error Rate ◽  
Error Rate ◽  
Phase Shifter ◽  
Extinction Ratio ◽  
Fibre Length ◽  
Data Rate ◽  
Operating Voltage ◽  
Data Centre ◽  
Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

scholarly journals Neuro-Inspired Computing with Spin-VCSELs

2021 ◽  
Vol 11 (9) ◽  
pp. 4232
Author(s):  
Krishan Harkhoe ◽  
Guy Verschaffelt ◽  
Guy Van der Sande
Keyword(s):  
Processing Speed ◽  
Delay Time ◽  
High Speed ◽  
State Of The Art ◽  
Polarization Modulation ◽  
Time Interval ◽  
Computing Technique ◽  
High Modulation ◽  
Short Time ◽  
Modulation Speed

Delay-based reservoir computing (RC), a neuromorphic computing technique, has gathered lots of interest, as it promises compact and high-speed RC implementations. To further boost the computing speeds, we introduce and study an RC setup based on spin-VCSELs, thereby exploiting the high polarization modulation speed inherent to these lasers. Based on numerical simulations, we benchmarked this setup against state-of-the-art delay-based RC systems and its parameter space was analyzed for optimal performance. The high modulation speed enabled us to have more virtual nodes in a shorter time interval. However, we found that at these short time scales, the delay time and feedback rate heavily influence the nonlinear dynamics. Therefore, and contrary to other laser-based RC systems, the delay time has to be optimized in order to obtain good RC performances. We achieved state-of-the-art performances on a benchmark timeseries prediction task. This spin-VCSEL-based RC system shows a ten-fold improvement in processing speed, which can further be enhanced in a straightforward way by increasing the birefringence of the VCSEL chip.

scholarly journals Electromechanically reconfigurable optical nano-kirigami

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shanshan Chen ◽  
Zhiguang Liu ◽  
Huifeng Du ◽  
Chengchun Tang ◽  
Chang-Yin Ji ◽  
...  
Keyword(s):  
Near Infrared ◽  
Large Range ◽  
Three Dimensional ◽  
High Contrast ◽  
Si Substrate ◽  
High Modulation ◽  
Gold Nanostructure ◽  
Infrared Wavelengths ◽  
On Chip ◽  
Nano Electromechanical System

AbstractKirigami, with facile and automated fashion of three-dimensional (3D) transformations, offers an unconventional approach for realizing cutting-edge optical nano-electromechanical systems. Here, we demonstrate an on-chip and electromechanically reconfigurable nano-kirigami with optical functionalities. The nano-electromechanical system is built on an Au/SiO2/Si substrate and operated via attractive electrostatic forces between the top gold nanostructure and bottom silicon substrate. Large-range nano-kirigami like 3D deformations are clearly observed and reversibly engineered, with scalable pitch size down to 0.975 μm. Broadband nonresonant and narrowband resonant optical reconfigurations are achieved at visible and near-infrared wavelengths, respectively, with a high modulation contrast up to 494%. On-chip modulation of optical helicity is further demonstrated in submicron nano-kirigami at near-infrared wavelengths. Such small-size and high-contrast reconfigurable optical nano-kirigami provides advanced methodologies and platforms for versatile on-chip manipulation of light at nanoscale.

scholarly journals Topology Design of Digital Metamaterials for Ultra-Compact Integrated Photonic Devices Based on Mode Manipulation

2021 ◽  
Author(s):  
Han Ye ◽  
Yanrong Wang ◽  
Shuhe Zhang ◽  
Danshi Wang ◽  
Yumin Liu ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Topology Design ◽  
Functional Region ◽  
Optical Interconnections ◽  
Silicon Waveguide ◽  
All Optical ◽  
On Chip ◽  
Mode Order

Precise manipulation of mode order in silicon waveguide plays a fundamental role in the on-chip all-optical interconnections and is still a tough task in design when the functional region is...

High Extinction-Ratio Integrated Mach–Zehnder Modulator With Active Y-Branch for Optical SSB Signal Generation

2010 ◽  
Vol 22 (12) ◽  
pp. 941-943 ◽  
Author(s):  
Yoshihiro Ogiso ◽  
Yuta Tsuchiya ◽  
Satoshi Shinada ◽  
Shinya Nakajima ◽  
Tetsuya Kawanishi ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Signal Generation ◽  
High Extinction Ratio ◽  
Mach Zehnder Modulator
Sign in / Sign up

Export Citation Format

Share Document