scholarly journals Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Shuo-Fu Hsu ◽  
Jyh-Horng Chou ◽  
Chun-Hsiung Fang ◽  
Min-Hang Weng
Keyword(s):  
Electrical Resistivity ◽  
Taguchi Method ◽  
Plasma Deposition ◽  
Optical Transmittance ◽  
Processing Parameters ◽  
Zno Thin Films ◽  
Zno Films ◽  
Arc Plasma ◽  
Cathode Arc ◽  
Grey Relational

We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performances in the deposition operations. The effect and optimization of deposition parameters, comprising the Ar : O2gas flow ratio of 1 : 6, 1 : 8, and 1 : 10, the arc current of 50 A, 60 A, and 70 A, and the deposition time of 5 min, 10 min, and 15 min, on the electrical resistivity and optical transmittance of the ZnO films are studied. The results indicate that, by using the grey-relational Taguchi method, the optical transmittance of ZnO thin films increases from 88.17% to 88.82% and the electrical resistivity decreases from5.12×10-3Ω-cm to4.38×10-3Ω-cm, respectively.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

Effects of Thickness and Preheated Temperature on Grains Orientation of 2D-ZnO Nanostructure and their Photocatalytic Activity

2021 ◽  
Vol 66 ◽  
pp. 113-128
Author(s):  
Mahdia Toubane ◽  
Assia Azizi ◽  
D. Houanoh ◽  
R. Tala-Ighil ◽  
F. Bensouici ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Heating Temperature ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Blue Dye ◽  
Zno Nanostructure ◽  
Number Of Layers

The effects of pre-heating temperature and thickness of layers on (002) preferred orientation of ZnO thin films and their photocatalytic activity are reported. All films crystallize into a Zincite-type structure. With increasing pre-heating temperature, the evolution from (002) to (101) diffraction peaks indicates change in growth mode of ZnO films. Pre-heating at 100°C is the most favourable for highly oriented ZnO thin films along (002) plane whereas all films deposited with different number of layers are oriented along (101) plane. The crystallite size is found to be in the range 20 - 32 nm. The observed average optical transmittance for these films is higher than 90% in the visible range. The energy band gap decreases with increasing number of layers but increases with increasing pre-heating temperatures. Wettability tests of ZnO thin films surface show a hydrophobic aspect for all films. The film pre-heated at 400°C with 223nm of thickness exhibits the highest degradation of methyl blue dye of 94% with high levels of photostability over five cycles.

Decrease in Work Function of Transparent Conducting ZnO Thin Films by Phosphorus Ion Implantation

2008 ◽  
Vol 8 (9) ◽  
pp. 4877-4880 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Oxygen Vacancies ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
Visible Wavelength Range

To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

Multi-objective Optimization Scheme for PID-Controlled DC Motor

2016 ◽  
Vol 7 (3) ◽  
pp. 734 ◽  
Author(s):  
Gunawan Dewantoro
Keyword(s):  
Taguchi Method ◽  
Optimization Problems ◽  
Signal To Noise Ratio ◽  
Processing Parameters ◽  
Dc Motor ◽  
Quality Characteristics ◽  
Mechanical Equipment ◽  
Multi Objective ◽  
Conflicting Objectives ◽  
Grey Relational

DC Motor is the most basic electro-mechanical equipment and well-known for its merit and simplicity. The performance of DC motor is assessed based on several qualities that are most-likely contradictory each other, i.e. settling time and overshoot percentage. Most of controllers optimization problems are multi-objective in nature since they normally have several conflicting objectives that must be met simultaneously. In this study, the grey relational analysis (GRA) was combined with Taguchi method to search the optimum PID parameter for multi-objective problem. First, a L<sub>9 </sub>(3<sup>3</sup>) orthogonal array was used to plan out the processing parameters that would affect the DC motor’s speed. Then GRA was applied to overcome the drawback of single quality characteristics in the Taguchi method, and then the optimized PID parameter combination was obtained for multiple quality characteristics from the response table and the response graph from GRA. Signal-to-noise ratio (S/N ratio) calculation and analysis of variance (ANOVA) would be performed to find out the significant factors. Lastly, the reliability and reproducibility of the experiment was verified by confirming a confidence interval (CI) of 95%.

Transmittance, Absorbance and Emission of Ga related Defects in Ga-doped ZnO Nanocrystal Films

MRS Advances ◽  
2020 ◽  
Vol 5 (59-60) ◽  
pp. 3015-3022
Author(s):  
Tetyana V. Torchynska ◽  
Brahim El Filali ◽  
Jose L. Casas Espinola ◽  
Chetzyl I. Ballardo Rodriguez ◽  
Georgiy Polupan ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Emission Band ◽  
Free Exciton ◽  
Thermal Quenching ◽  
Ultrasonic Spray Pyrolysis ◽  
Optical Transmittance ◽  
Optical Bandgap ◽  
Zno Films ◽  
Near Band Edge ◽  
Phonon Replica

ZnO films grown by ultrasonic spray pyrolysis with different Ga contents in the range of 1.0-6.5 at% on quartz substrates have been studied. The ZnO:Ga films were annealed at 400°C for 4h in a nitrogen flow. Morphology, emission, transmittance, absorbance and electrical resistivity were controlled. It is revealed that with a small content of Ga ≤ 4.0 at%, the ZnO:Ga films maintain a flat morphology, their transmittance increases to 86% together with the increase of the ZnO optical bandgap to 3.28 eV and the intensity enlargement of the near band edge (NBE) emission band A (3.188 eV). Furthermore, the new NBE emission band B (3.072 eV) appears in photoluminescence (PL) spectra at Ga contents ≥ 1.5 at%. Simultaneously, the process of decreasing electrical resistivity becomes saturating. The last effect is attributed to the self-compensation effect in n-type ZnO:Ga films related to the generation of acceptor type complexes (VZn2- - GaZn+). The thermal quenching of the PL intensities of the A and B PL bands is studded at 18-290K, which allows assigning the PL band A to the LO-phonon replica of the free exciton emission and the band B to the emission in donor-acceptor pairs: shallow donors - acceptor complexes (VZn2- - GaZn+). The NBE emission intensity drops and the ZnO optical bandgap demonstrates the shift to a lower energy at Ga doping up to ≤ 6.5 at%. Optimal Ga concentrations have been estimated to produce ZnO:Ga films with flat morphology, high optical transmittance and bright NBE emission.

scholarly journals Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Metals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 437
Author(s):  
Jae-Ho Lee ◽  
Kwonwoo Oh ◽  
Kyungeun Jung ◽  
K.C. Wilson ◽  
Man-Jong Lee
Keyword(s):  
Thin Films ◽  
Measurement Techniques ◽  
Wide Band ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Wide Band Gap ◽  
Cu Doping

Zinc oxide (ZnO) is a wide-band-gap semiconductor that is promising for use as a transparent conductive oxide film. To date, to improve their optoelectrical properties, pristine ZnO films have been doped with metals using various techniques. In this study, nanostructured Cu-ZnO thin films were synthesized using a modified two-step radio frequency magnetron sputtering technique with separate ZnO and metallic Cu targets. Controlling the timing of the Cu/ZnO co-sputtering and ZnO-only sputtering steps afforded a significant change in the resulting nanostructures, such as uniform Cu-ZnO and broccoli-structured Cu-ZnO thin films. Using various measurement techniques, the influence of Cu doping was analyzed in detail. Furthermore, a crystal growth model for the formation of the broccoli-like clusters was suggested. The Cu-ZnO thin films synthesized using this technique demonstrate a highly improved conductivity with some loss in optical transmittance.

Low Friction-Coefficient TiBCN Nanocomposite Coatings Prepared by Cathode Arc Plasma Deposition

2015 ◽  
Vol 17 (3) ◽  
pp. 221-227 ◽  
Author(s):  
Baozhu LIN ◽  
Lingling WANG ◽  
Qiang WAN ◽  
Shaojian YAN ◽  
Zesong WANG ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Plasma Deposition ◽  
Nanocomposite Coatings ◽  
Arc Plasma ◽  
Low Friction ◽  
Cathode Arc

Effect of the Ti-target arc current on the properties of Ti-doped ZnO thin films prepared by dual-target cathodic arc plasma deposition

2016 ◽  
Vol 42 (13) ◽  
pp. 14438-14442 ◽  
Author(s):  
Shuo-Fu Hsu ◽  
Min-Hang Weng ◽  
Jyh-Horng Chou ◽  
Chun-Hsiung Fang ◽  
Ru-Yuan Yang
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Zno Thin Films ◽  
Arc Plasma ◽  
Arc Current ◽  
Doped Zno ◽  
Cathodic Arc ◽  
Dual Target
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