scholarly journals Tuning the Morphology and Properties of Nanostructured Cu-ZnO Thin Films Using a Two-Step Sputtering Technique

Metals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 437
Author(s):  
Jae-Ho Lee ◽  
Kwonwoo Oh ◽  
Kyungeun Jung ◽  
K.C. Wilson ◽  
Man-Jong Lee
Keyword(s):  
Thin Films ◽  
Measurement Techniques ◽  
Wide Band ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Wide Band Gap ◽  
Cu Doping

Zinc oxide (ZnO) is a wide-band-gap semiconductor that is promising for use as a transparent conductive oxide film. To date, to improve their optoelectrical properties, pristine ZnO films have been doped with metals using various techniques. In this study, nanostructured Cu-ZnO thin films were synthesized using a modified two-step radio frequency magnetron sputtering technique with separate ZnO and metallic Cu targets. Controlling the timing of the Cu/ZnO co-sputtering and ZnO-only sputtering steps afforded a significant change in the resulting nanostructures, such as uniform Cu-ZnO and broccoli-structured Cu-ZnO thin films. Using various measurement techniques, the influence of Cu doping was analyzed in detail. Furthermore, a crystal growth model for the formation of the broccoli-like clusters was suggested. The Cu-ZnO thin films synthesized using this technique demonstrate a highly improved conductivity with some loss in optical transmittance.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

2009 ◽  
Vol 470 (1-2) ◽  
pp. 408-412 ◽  
Author(s):  
T. Ratana ◽  
P. Amornpitoksuk ◽  
T. Ratana ◽  
S. Suwanboon
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Sol Gel ◽  
Wide Band ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Wide Band Gap ◽  
Doped Zno

scholarly journals PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sudjatmoko Sudjatmoko ◽  
Suryadi Suryadi ◽  
Widdi Usada ◽  
Tono Wibowo ◽  
Wiryoadi Wiryoadi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Aluminium Doping ◽  
Deposited Films ◽  
Heated Glass

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING. Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering using targets composed of ZnO and Al2O3. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. The surface morphology and crystalline structure, as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis were observed that the optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when deposition temperature was raised from 200 to 400 oC. Films grown on 300 oC substrates showed a high conductivity value of 0.2 x 102 -1cm-1 and a visible transmission of about 85%. The growth temperatures of 300 oC, aluminium doping levels of 0.9 wt.% were preferable to achieve ZnO:Al films with optical and structural qualities as required for solar cell applications.

Room-Temperature Deposition of ZnO Thin Films by Using DC Magnetron Sputtering

2014 ◽  
Vol 896 ◽  
pp. 237-240 ◽  
Author(s):  
Putut Marwoto ◽  
Sulhadi ◽  
Sugianto ◽  
Didik Aryanto ◽  
Edy Wibowo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Film Growth ◽  
Transparent Conductive Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Plasma Power ◽  
Zno Film ◽  
Dc Magnetron Sputtering

ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7(Ωcm)-1to 8.92x10-7(Ωcm)-1once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).

Effects of Thickness and Preheated Temperature on Grains Orientation of 2D-ZnO Nanostructure and their Photocatalytic Activity

2021 ◽  
Vol 66 ◽  
pp. 113-128
Author(s):  
Mahdia Toubane ◽  
Assia Azizi ◽  
D. Houanoh ◽  
R. Tala-Ighil ◽  
F. Bensouici ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Heating Temperature ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Blue Dye ◽  
Zno Nanostructure ◽  
Number Of Layers

The effects of pre-heating temperature and thickness of layers on (002) preferred orientation of ZnO thin films and their photocatalytic activity are reported. All films crystallize into a Zincite-type structure. With increasing pre-heating temperature, the evolution from (002) to (101) diffraction peaks indicates change in growth mode of ZnO films. Pre-heating at 100°C is the most favourable for highly oriented ZnO thin films along (002) plane whereas all films deposited with different number of layers are oriented along (101) plane. The crystallite size is found to be in the range 20 - 32 nm. The observed average optical transmittance for these films is higher than 90% in the visible range. The energy band gap decreases with increasing number of layers but increases with increasing pre-heating temperatures. Wettability tests of ZnO thin films surface show a hydrophobic aspect for all films. The film pre-heated at 400°C with 223nm of thickness exhibits the highest degradation of methyl blue dye of 94% with high levels of photostability over five cycles.

Decrease in Work Function of Transparent Conducting ZnO Thin Films by Phosphorus Ion Implantation

2008 ◽  
Vol 8 (9) ◽  
pp. 4877-4880 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Oxygen Vacancies ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Free Electrons ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
Visible Wavelength Range

To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

2018 ◽  
Vol 281 ◽  
pp. 673-678
Author(s):  
Jing Shang ◽  
Liao Ying Zheng ◽  
Xue Shi ◽  
Jiang Tao Zeng ◽  
Guo Rong Li
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Radio Frequency Magnetron Sputtering ◽  
Native Defects ◽  
Silicon Chips ◽  
Annealing Conditions

In this work, the ZnO films are deposited on conducting silicon chips by radio frequency magnetron sputtering. The as-deposited thin films are annealed at 800 °C in a N2, O2 and CO+N2 atmosphere for 1h, respectively. The microstructure and electrical properties of the films are comprehensively investigated. XRD studies reveal that the ZnO films have a hexagonal wurtzite structure and they are highly oriented along (002) direction. The surface roughness of ZnO films decreased after annealing, which indicates better film quality. Room temperature PL spectrum is used to investigate the band gap and native defects existing in the films. Defects of thin films for different annealing conditions are analyzed in detail and the possible mechanism of the defects emission is discussed. We suggest that annealing atmosphere of CO+N2 is the most suitable annealing conditions for obtaining ZnO thin films with better crystal quality and good luminescence performance.

scholarly journals Extended Wide Band Gap Amorphous ZnO Thin Films Deposited by Spray Pyrolysis

2020 ◽  
Vol 44 (5) ◽  
pp. 347-352
Author(s):  
Noubeil Guermat ◽  
Warda Daranfed ◽  
Kamel Mirouh
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Wide Band ◽  
Zno Thin Films ◽  
Wide Band Gap

The Preparation and Optical Property of ZnO Thin-Film by Electrospray

2009 ◽  
Vol 155 ◽  
pp. 151-154 ◽  
Author(s):  
Yan Huai Ding ◽  
Ping Zhang ◽  
Yong Jiang ◽  
Fu Xu ◽  
Jing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Force Microscopy ◽  
Glass Substrates

ZnO thin-films were prepared from sol-gel precursors using electrospray method. The structure, morphology and optical property of ZnO thin-films deposited on glass substrates were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and absorption spectrums (ABS). The surface images obtained directly from AFM showed the compact ZnO films were composed of wurtzite ZnO nanoparticles. The ZnO films presented high optical transmittance in the visible region and strong absorption in ultraviolet region.

Sign in / Sign up

Export Citation Format

Share Document