scholarly journals Narrowband, Visible-Blind UV-A Sensor Based on aMg0.52Zn0.48OFilm Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Yuki Kohama ◽  
Takuya Nagai ◽  
Mitsuru Inada ◽  
Tadashi Saitoh
Keyword(s):  
Radio Frequency ◽  
Bias Voltage ◽  
Quartz Substrate ◽  
Metal Structure ◽  
Ultraviolet Photodetector ◽  
Composite Target ◽  
Peak Response ◽  
Radio Frequency Sputtering ◽  
Metal Semiconductor Metal ◽  
Visible Blind

A narrowband, visible-blind ultraviolet photodetector (PD) for UV-A is fabricated using a Mg0.52Zn0.48O film that is formed on a quartz substrate by a radio-frequency sputtering technique using a ZnO-Mg composite target. The content of Mg in the film is controlled by varying the number of Mg chips on the ZnO plate. The fabricated PD has a metal-semiconductor-metal structure with interdigitated electrodes and exhibits a narrow 3 dB bandwidth of 26 nm with a peak response wavelength of 340 nm and a cut-off wavelength of 353 nm. Moreover, the peak responsivity of the PD increases linearly with the bias voltage up to 30 V, indicating that the device operates via a photoconductive gain mechanism.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure

2013 ◽  
Vol 300-301 ◽  
pp. 1285-1288
Author(s):  
Li Zen Hsieh ◽  
Jun Yan Chang
Keyword(s):  
Reference Sample ◽  
Schottky Contact ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A reference sample of AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) is also fabricated for comparision.

scholarly journals Влияние электродов на параметры солнечно-слепых детекторов УФ излучения

2021 ◽  
Vol 55 (3) ◽  
pp. 264
Author(s):  
В.М. Калыгина ◽  
А.В. Цымбалов ◽  
А.В. Алмаев ◽  
Ю.С. Петрова
Keyword(s):  
Ultraviolet Radiation ◽  
Radio Frequency ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Interelectrode Distance ◽  
Metal Structures ◽  
Photoelectric Characteristics ◽  
Sapphire Substrates ◽  
Radio Frequency Sputtering ◽  
Metal Semiconductor Metal

The influence of electrode topology on the electrical and photoelectric characteristics of metal/semiconductor/metal structures was investigated. Gallium oxide films were obtained by radio-frequency sputtering of a Ga2O3 target onto sapphire substrates with the (0001) orientation. Two types of electrodes were formed on the surface of the oxide films: two parallel electrodes with an interelectrode distance of 250 mkm and interdigitated ones. The distance between the "fingers" of the detectors of the second type was 50, 30, 10, and 5 mkm. Regardless of the type of contacts, the structures exhibit sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. Detectors of the second type with an interelectrode distance of 5 μm demonstrate the highest values of the photocurrent Iph = 3.8 mA and detectivity D * = 5.54⋅10^15 cmHz^0.5W^-1.

ZnO ultraviolet photodetector based metal-semiconductor-metal structure

2018 ◽  
Author(s):  
Mingyu Cong ◽  
Yuhan Duan ◽  
Dayong Jiang ◽  
Zexuan Guo ◽  
Xuan Zhou ◽  
...  
Keyword(s):  
Metal Structure ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal

Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87993-87997 ◽  
Author(s):  
H. T. Zhou ◽  
L. Li ◽  
H. Y. Chen ◽  
Z. Guo ◽  
S. J. Jiao ◽  
...  
Keyword(s):  
Metal Structure ◽  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Before And After ◽  
Amorphous Ingazno

A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.

AN ULTRAVIOLET PHOTODETECTOR BASED ON GaN/Si

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4310-4313
Author(s):  
ZHIZHEN YE ◽  
XING GU ◽  
JINGYUN HUANG ◽  
YU WANG ◽  
QINGHUI SHAO ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Ultraviolet Photodetector ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
X Ray ◽  
Metal Semiconductor Metal ◽  
Measurement Results ◽  
Msm Structure ◽  
Gan Film ◽  
Gan Buffer Layer

Single crystalline GaN is grown on Si(111) by a vacuum reactive evaporation method. X-ray diffraction(XRD), scanning electron microscopy(SEM), photoluminescence measurement (PL), and Hall measurement results indicate that single crystalline wurtzite GaN film is grown on the microcrystalline GaN buffer layer on Si(111) substrate. The photoconductive ultraviolet photodetector with a metal-semiconductor-metal(MSM) structure is prepared on the unintentionally doped n-type GaN film and the properties of the detector are investigated. The detector has a peak photocurrent responsivity at 365nm and a abrupt cut-off curve. The responsivity increased with the increasing of bias voltage. The responsivity saturated when the bias voltage reached 7V. The response time was ms level under normal conditions and dropped with the increase of bias voltage before the bias voltage reached its saturation.

scholarly journals p-Type conducting transparent characteristics of delafossite Mg-doped CuCrO2 thin films prepared by RF-sputtering

2015 ◽  
Vol 3 (23) ◽  
pp. 6012-6024 ◽  
Author(s):  
A. Barnabé ◽  
Y. Thimont ◽  
M. Lalanne ◽  
L. Presmanes ◽  
P. Tailhades
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Quartz Substrate ◽  
Rf Sputtering ◽  
Radio Frequency Sputtering ◽  
P Type ◽  
Mg Doped

The growth of technologically relevant compounds, Mg-doped CuCrO2 delafossite thin films, on a quartz substrate by radio-frequency sputtering is reported in this work.

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