scholarly journals p-Type conducting transparent characteristics of delafossite Mg-doped CuCrO2 thin films prepared by RF-sputtering

2015 ◽  
Vol 3 (23) ◽  
pp. 6012-6024 ◽  
Author(s):  
A. Barnabé ◽  
Y. Thimont ◽  
M. Lalanne ◽  
L. Presmanes ◽  
P. Tailhades
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Quartz Substrate ◽  
Rf Sputtering ◽  
Radio Frequency Sputtering ◽  
P Type ◽  
Mg Doped

The growth of technologically relevant compounds, Mg-doped CuCrO2 delafossite thin films, on a quartz substrate by radio-frequency sputtering is reported in this work.

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

2016 ◽  
Vol 846 ◽  
pp. 650-656
Author(s):  
Zhi Yin Lee ◽  
Siti Aisyah binti Osman ◽  
Chee Yong Fong ◽  
Sha Shiong Ng
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Flexible Substrate ◽  
Indium Nitride ◽  
Rf Sputtering ◽  
Flexible Substrates ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Radio Frequency Sputtering ◽  
Surface Morphologies

The study signifies the radio-frequency (RF) sputtering growth and characterizations of indium nitride (InN) thin films deposited on flexible substrates. A three-inch diameter indium (In) sputtering target with purity of 99.999% was used. The deposition was carried out at room temperature and with substrate temperature of 200 °C. The surface morphologies, structural and optical properties of the deposited thin films were examined by using field-emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction as well as Fourier transform infrared spectroscopy. All the results revealed that InN thin films have been successfully deposited on the flexible substrates in the gas mixture ambient of argon and nitrogen.

Effect of lack of oxygen on optical and electrical properties of RF magnetron sputtering deposited CuFeO2−x thin films

2018 ◽  
Vol 32 (31) ◽  
pp. 1850379
Author(s):  
Yiqi Li ◽  
Lian Chen ◽  
Quanrong Deng ◽  
Yonglong Shen ◽  
Geming Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Sem Images ◽  
Sputtering Deposition ◽  
Radio Frequency Sputtering ◽  
P Type

Delafossite CuFeO[Formula: see text] thin films were fabricated on quartz substrate using radio-frequency sputtering deposition under low O2 flow ratios from 9% to 0% at room temperature. The as-deposited films were in amorphous phase and crystallized into rhombohedral 3R (R3m) delafossite structure after post annealing at 900[Formula: see text]C for 2 h in flowing N2 atmosphere. SEM images showed that the films were composed of nano-sized crystallized grains, thin film composed of smoother surface and higher oxygen content was obtained under higher oxygen percentage in sputtering gas. The optical transmission spectra of these films were studied in the wavelength range 200–1500 nm and the results revealed a narrowing trend of direct bandgap from 3.09 eV to 2.98 eV with the decrease of oxygen flow ratio during deposition. All of the post-annealed CuFeO[Formula: see text] thin films exhibited p-type conductivity and linear ohmic contact feature with Cu electrodes. The carrier concentration of thin films increased from [Formula: see text] to [Formula: see text] whereas the carrier mobility decreased from [Formula: see text] to [Formula: see text] as the oxygen flow ratio reduced from 9% to 0%. The ability of controlling compound composition enables tuning of carrier concentration and mobility in CuFeO[Formula: see text] and offering essential technical basis in engineering photoelectronic devices.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Radio frequency sputtering of ferrimagnetic thin films

1971 ◽  
Vol 21 (4-5) ◽  
pp. 558-562 ◽  
Author(s):  
R. Metselaar ◽  
P. Rem
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

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