scholarly journals Microstructure and Flow Stress of Nanoscale Cu/Nb Multilayers

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
F. Wang ◽  
L. F. Zhang ◽  
P. Huang ◽  
J. Y. Xie ◽  
T. J. Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Bands ◽  
Length Scale ◽  
Individual Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Plastic Stability ◽  
High Resolution Tem ◽  
High Plastic

Nanoscale Cu/Nb multilayers with individual layer thicknesses of 2, 5, and 15 nm were prepared by d.c. magnetron sputtering. The cross-sectional morphologies of the multilayers were examined under transmission electron microscopy (TEM) as well as high resolution TEM, whilst the flow stresses were measured with nanoindentation. A unique cross-sectional microstructure comprising well-modulated and mixed regions was observed, causing length-scale-independent flow stresses not found in existing studies, and shear bands were absent upon plastic deformation. Built upon this unique microstructure, possible mechanisms underlying the high plastic stability and length-scale-independent flow stresses of Cu/Nb multilayers were discussed in terms of amorphous-crystalline interface and its interaction with both mixed and well-modulated regions.

Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures

1996 ◽  
Vol 441 ◽  
Author(s):  
Maxim V. Sidorov ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Cross Sectional ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThis work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.

Investigation of the Shape of InGaAs/GaAs Quantum Dots

2002 ◽  
Vol 737 ◽  
Author(s):  
Susan Y. Lehman ◽  
Alexana Roshko ◽  
Richard P. Mirin ◽  
John E. Bonevich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Length Scale ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Three Samples

ABSTRACTThree samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

Structure of Shear Bands in Zirconium-Based Metallic Glasses Observed by Transmission Electron Microscopy

2002 ◽  
Vol 754 ◽  
Author(s):  
Xiaofeng Gu ◽  
Kenneth J. T. Livi ◽  
Todd C. Hufnagel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Metallic Glasses ◽  
Defect Structure ◽  
Shear Bands ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Before And After ◽  
High Resolution Tem ◽  
Band Spacing

ABSTRACTWe have used transmission electron microscopy (TEM) to investigate the structure of shear bands produced by bending electron-transparent Zr52.5Cu17.9Ni14.6Al10Ti5 metallic glass specimens. Shear bands were located by comparing the structure of the specimens before and after deformation. The shear band spacing is influenced by the structure of the specimen; portions of the specimen with a significant population of nanocrystals show a smaller separation between shear bands. Quantitative high resolution TEM analysis based on ratio technique has been used to explore the defect structure in shear bands. High density and void-like defects with size of about 1 nm were found in shear bands formed in both amorphous and nanocrystalline areas. A simple model was proposed to explain the formation of these defects.

Domain Structures of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. C. Jiang ◽  
X. Pan ◽  
C. L. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Domain Structures ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTThe structural characteristics of SrRuO3 thin films deposited on a (001) SrTiO3 substrate by pulsed laser were studied by transmission electron microscopy (TEM) and high-resolution TEM. TEM studies of cross-sectional specimens revealed the epitaxial growth of the films with the SrRuO3-(110) plane parallel to the SrTiO3-(001) plane. Two types of 90° rotational domain structures were observed in both cross-sectional and plan-viewing specimens. The in-plane orientations of these domains with respect to the substrate are either of SrRuO3-[110] // SrTiO3 - [100] and SrRuO3-[001] // SrTiO3-[010], or of SrRuO3-[110] // SrTiO3-[010] and SrRuO3-[001] // SrTiO3-[100].

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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