scholarly journals Self-Catalytic Growth of Tin Oxide Nanowires by Chemical Vapor Deposition Process

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Bongani S. Thabethe ◽  
Gerald F. Malgas ◽  
David E. Motaung ◽  
Thomas Malwela ◽  
Christopher J. Arendse
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Liquid Droplets ◽  
Visible Absorption ◽  
Vls Growth ◽  
Uv Visible

We report on the synthesis of tin oxide (SnO2) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system. The as-synthesized products were characterized using UV-visible absorption spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM). The band gap of the nanowires determined from UV-visible absorption was around 3.7 eV. The SEM micrographs revealed “wool-like” structure which contains nanoribbons and nanowires with liquid droplets at the tips. Nanowires typically have diameter in the range of 50–200 nm and length 10–100 μm. These nanowires followed the vapor-liquid-solid (VLS) growth mechanism.

scholarly journals Synthesis and Optical Properties of CdSxSe1-x Semiconductor Nanomaterials by Chemical Vapor Deposition Method

2019 ◽  
Vol 12 (3) ◽  
pp. 55-64
Author(s):  
Nadia M. Jassim
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Vls Growth

Highly pure and crystalline CdSxSe1 -x nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdSxSe1 -x nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materials

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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