scholarly journals Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Chaoyang Li ◽  
Dapeng Wang ◽  
Zeming Li ◽  
Xin Li ◽  
Toshiyuki Kawaharamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Plasma Deposition ◽  
Zno Thin Films ◽  
Rf Plasma ◽  
Species Variation ◽  
Zno Film ◽  
Oxygen Ratio ◽  
Gas Ratio

ZnO thin films were deposited on quartz glasses by a radio frequency (rf) magnetron sputtering. The mechanism for stoichiometry in the ZnO thin films was investigated by adjusting Ar/O2 working gas ratio during deposition. The optical emission spectroscopy (OES) in situ measurement revealed the kinetics species variation during rf plasma deposition process. It was found that the intensity of the excited atomic oxygen (O*) was increased with the oxygen ratio increasing, resulting in enhancing the oxidization effect during ZnO film fabrication. On the contrary, the intensities of atomic zinc emission were gradually decreased, resulting in the zinc ratio in the film were decreased with the oxygen ratio increasing. Therefore, it is possible to control the stoichiometry of ZnO film by simply adjusting the working gas ambient in the rf plasma deposition. The structural and optical properties of ZnO thin films were investigated as well.

Effect of Temperature on the Optical and Morphological Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1115 ◽  
pp. 422-425
Author(s):  
Souad A.M. Al-Bat’hi ◽  
Maizatulnisa Othman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Effect Of Temperature

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

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