scholarly journals Sputter Power Influenced Structural, Electrical, and Optical Behaviour of Nanocrystalline CuNiO2 Films Formed by RF Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Copper Nickel ◽  
Alloy Target ◽  
Vibrational Bands ◽  
Binding Configuration

Copper nickel oxide (CuNiO2) films were deposited on glass and silicon substrates using RF magnetron sputtering of equimolar Cu50Ni50 alloy target at different sputter powers in the range of 3.1–6.1 W/cm2. The effect of sputter power on the chemical composition, crystallographic structure, chemical binding configuration, surface morphology, and electrical and optical properties of CuNiO2 films was investigated. The films formed at sputter power of 5.1 W/cm2 were of nearly stoichiometric CuNiO2. Fourier transform infrared spectroscopic studies indicated the presence of the characteristic vibrational bands of copper nickel oxide. The nanocrystalline CuNiO2 films were formed with the increase in grain size from 75 to 120 nm as the sputter power increased from 3.1 to 5.1 W/cm2. The stoichiometric CuNiO2 films formed at sputter power of 5.1 W/cm2 exhibited electrical resistivity of 27 Ωcm, Hall mobility of 21 cm2/Vsec, and optical bandgap of 1.93 eV.

scholarly journals Growth of MoO3 Films by RF Magnetron Sputtering: Studies on the Structural, Optical, and Electrochromic Properties

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
S. Subbarayudu ◽  
V. Madhavi ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Vibrational Bands ◽  
The Fourier Transform

Molybdenum oxide (MoO3) films were deposited on glass and silicon substrates held at temperature 473 K by RF magnetron sputtering of molybdenum target at various oxygen partial pressures in the range 8×10-5–8×10-4 mbar. The deposited MoO3 films were characterized for their chemical composition, crystallographic structure, surface morphology, chemical binding configuration, and optical properties. The films formed at oxygen partial pressure of 4×10-4 mbar were nearly stoichiometric and nanocrystalline MoO3 with crystallite size of 27 nm. The Fourier transform infrared spectrum of the films formed at 4×10-4 mbar exhibited the characteristics vibrational bands of MoO3. The optical band gap of the films increased from 3.11 to 3.28 eV, and the refractive index increased from 2.04 to 2.16 with the increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar, respectively. The electrochromic performance of MoO3 films formed on ITO coated glass substrates was studied and achieved the optical modulation of about 13% with color efficiency of about 20 cm2/C.

Comparison Between In-situ Annealing and External Annealing For Barium Ferrite Thin Films Made by RF Magnetron Sputtering

2005 ◽  
Vol 875 ◽  
Author(s):  
A. R. Abuzir ◽  
W. J. Yeh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Barium Ferrite ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Axis Orientation ◽  
Average Value ◽  
Ferrite Thin Films

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

2017 ◽  
Vol 53 (10) ◽  
pp. 1634-1637 ◽  
Author(s):  
Chia-Ching Wu ◽  
Wei-Chen Shih
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nickel Oxide ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Glass Substrates ◽  
Triple Layer ◽  
Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

Preparation and magnetic properties for FeSex/Bi2Se3 bilayer films on silicon substrates by RF magnetron sputtering

2019 ◽  
Vol 12 (02) ◽  
pp. 1950018 ◽  
Author(s):  
J. Zhang ◽  
K. Zhao ◽  
X. S. Yang ◽  
Y. Zhao
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Weak Ferromagnetism ◽  
Film Plane ◽  
Silicon Substrates ◽  
Bilayer Films

FeSex/Bi2Se3 bilayer thin films were grown by RF magnetron sputtering on silicon substrates with different thicknesses of Bi2Se3 and the structural, morphological and magnetic properties were investigated. FeSex/Bi2Se3 bilayer films had Bi2Se3 crystallites oriented with c-axis perpendicular to the film plane, and exhibited weak ferromagnetism at low temperature due to the ferromagnetic FeSe2. The thickness of Bi2Se3 layer affected both crystalline structure of Fe–Se layer and the magnetic property.

Growth of AlN Films on Silicon Substrates by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 602-603 ◽  
pp. 574-577
Author(s):  
Jian Huang ◽  
Ke Tang ◽  
Hui Min Yang ◽  
Mei Ai Lin ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Growth Parameters ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Gas Mixture ◽  
Silicon Substrates ◽  
Polycrystalline Aluminum ◽  
Preparation Conditions ◽  
Ar Gas

Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N2) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N2) and post-deposition annealing treatment -on the properties of AlN films were investigated by means of X-ray diffraction (XRD). Highly c-axis oriented AlN films were obtained with optimized growth parameters: p=0.3Pa, w=400w and Ar/N2=2.

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