scholarly journals A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
P. S. Pa

A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM) for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4layer easily and cleanly.

2011 ◽  
Vol 121-126 ◽  
pp. 805-809
Author(s):  
P.S Pa

In this study, the design of the mechanism of a recycling system using composite electrochemical and chemical machining for removing the surface layers from silicon wafers of solar cells is studied. The reason for constructing a new engineering technology and developing a clean production approach to perform the removal of surface thin film layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution. The goal of the development is to replace the current approach, which uses strong acid and grinding and may cause damage to the physical structure of silicon wafers and cause pollution to the environment, to efficiently meet the requirements of industry for low cost. It can not only perform highly efficient recycling of silicon wafers from discarded solar cells to facilitate the following remelting and crystal pulling process, but can also recycle defective silicon wafers during the fabrication process of solar cells for rework. A small gap width between cathode and workpiece, higher temperature, higher concentration, or higher flow rate of machining fluid corresponds to a higher removal rate for Si3N4 layer and epoxy film. Pulsed direct current can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of workpiece, but raises the current rating. A higher feed rate of silicon wafers of solar cells combine with enough electric power produces fast machining performance. The electrochemical and chemical machining just needs quite short time to make the Si3N4 layer and epoxy film remove easily and cleanly. An effective and low-cost recycle process for silicon wafers of solar cells is presented.


Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  

2014 ◽  
Vol 59 (1) ◽  
pp. 247-252 ◽  
Author(s):  
M. Musztyfaga-Staszuk ◽  
L.A. Dobrzanski ◽  
S. Rusz ◽  
M. Staszuk

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.


2020 ◽  
Vol 90 (10) ◽  
pp. 1758
Author(s):  
Н.А. Чучвага ◽  
Н.М. Кислякова ◽  
Н.С. Токмолдин ◽  
Б.А. Ракыметов ◽  
А.С. Серикканов

The wet chemical treatment of monocrystalline silicon wafers, said method comprising texturing, represents one of the fundamental steps of manufacturing techniques of high-efficiency solar cells. As part of this work, methods for texturing single-crystal silicon wafers for solar cells were studied.As a result of studies, the optimal parameters of texturing technology for the studied samples were determined. The main type of etchant for texturing processes, which is a solution of KOH with isopropanol, is also determined.


1994 ◽  
Vol 37-38 ◽  
pp. 355-360 ◽  
Author(s):  
A.W. Weeber ◽  
H.H.C. de Moor ◽  
R.A. Steeman ◽  
W.C. Sinke ◽  
F. Schuurmans ◽  
...  

2012 ◽  
Vol 209 (10) ◽  
pp. 1857-1860
Author(s):  
Eddy Simoen ◽  
Valerie Depauw ◽  
Ivan Gordon ◽  
Jef Poortmans

2011 ◽  
Vol 59 (5) ◽  
pp. 3047-3050 ◽  
Author(s):  
Jin-Su Yoo ◽  
Jun-Sik Cho ◽  
Kyu-Min Han ◽  
Junsin Yi
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document