scholarly journals Thermoelectric Properties of Al-Doped Mesoporous ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Min-Hee Hong ◽  
Chang-Sun Park ◽  
Won-Seon Seo ◽  
Young Soo Lim ◽  
Jung-Kun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Growth ◽  
Self Assembly ◽  
Doping Concentration ◽  
Sol Gel ◽  
Mesoporous Structure ◽  
Zno Thin Films ◽  
Al Doping ◽  
Mesoporous Zno

Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration.

scholarly journals The thermoelectric properties of Au nanoparticle-incorporated Al-doped mesoporous ZnO thin films

2019 ◽  
Vol 6 (5) ◽  
pp. 181799 ◽  
Author(s):  
Min-Hee Hong ◽  
Wooje Han ◽  
Kyu-Yeon Lee ◽  
Hyung-Ho Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Pore Structure ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Al Doping ◽  
Au Nps ◽  
Mesoporous Zno ◽  
Pore Arrangement

Mesoporous Al-doped ZnO thin films incorporated with gold nanoparticles (Au NPs) were synthesized using a sol–gel and evaporation-induced self-assembly process. In this study, the complementary effects of Au NP incorporation and Al doping on the thermoelectric properties of mesoporous ZnO thin films were analysed. The incorporated Au NPs induced an increase in electrical conductivity but a detriment in the pore arrangement of the mesoporous ZnO thin film, which was accompanied by a decrease in porosity. However, the addition of the Al dopant minimized the pore structural collapse because of the inhibition of the grain growth in the ZnO skeletal structure, resulting in the enhancement of the pore arrangement and porosity. When the Au NPs and Al dopant were added at the same time, the degradation in the pore structure was minimized and the electrical conductivity was effectively increased, but the absolute value of the Seebeck coefficient was decreased. However, as a result, the thermoelectric power factor was increased by 2.4 times compared to that of the pristine mesoporous ZnO thin film. It was found that co-introducing the Au NPs and Al doping to the mesoporous ZnO structure was effective in preserving the pore structure and increasing the electric conductivity, thereby enhancing the thermoelectric property of the mesoporous ZnO thin film.

Effect of Sintering Atmosphere on the Electrical and Thermal Properties of Al-Doped ZnO Thin Films Prepared Using Inkjet Printing Method

2015 ◽  
Vol 793 ◽  
pp. 440-444
Author(s):  
J.H. Lim ◽  
Cheow Keat Yeoh ◽  
Chik Abdullah ◽  
Pei Leng Teh
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Inkjet Printing ◽  
Zno Thin Films ◽  
Al Doping ◽  
Sintering Atmosphere ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

Al-doped ZnO thin films were prepared by ink-jet printing and their electrical and thermal properties with different amounts of Al doping and sintering atmosphere were investigated. The XRD traces of films show the doped materials did not form additional crystalline phases with increasing amounts of Al doping. Electrical conductivity of film increased from 4.86 S/cm to 120.94 S/cm as the amounts of Al doping increased from 0 wt% to 4 wt%. However, the thermal conductivity decreased from 24 W/mK to 13 W/mK with increasing the Al doping from 0 wt% to 4 wt%. The electrical conductivity of film shows higher values sintered in vacuum (120.94 S/cm) compared to film sintered in air (114.1 S/cm).

Influence of Ni Doping on Structural, Morphological and Optical Properties of Sol-Gel ZnO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 241-244 ◽  
Author(s):  
Tanattha Rattana ◽  
Sumetha Suwanboon ◽  
Chittra Kedkaew
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Doping Concentration ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Ni Doping ◽  
Coating Method

Ni-doped ZnO thin films were prepared on glass slide substrates by a sol-gel dip coating method with different Ni doping concentrations (0-33 mol%). The effect of Ni doping concentration on structural, surface morphology and optical properties of the thin films was characterized by XRD, FESEM and UV-Vis spectrophotometer. The XRD results indicated that pure ZnO thin film exhibited a hexagonal wurtzite structure. Ni (OH)2 phase were observed at a high Ni doping concentration. The FESEM images showed that the surface morphology and surface roughness were sensitive to the Ni doping concentration. The optical transmission measurements were observed that the transmittance decreased with increasing the Ni doping concentration.

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

Synthesize of Mesoporous ZnO Thin Films and Gas Sensing Property

2014 ◽  
Vol 960-961 ◽  
pp. 157-160
Author(s):  
Min Hee Hong ◽  
Yong June Choi ◽  
Tae Won Lee ◽  
Hee Yoon Chung ◽  
Hyung Ho Park
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Condensation Reaction ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gas Sensitivity ◽  
Complex Agent ◽  
Sol Gel Process ◽  
Sensor Properties ◽  
Mesoporous Zno

In this work, ordered mesoporous ZnO thin films was synthesized and gas sensor properties were introduced. Mesoporous ZnO thin films were successfully formed by sol-gel process. In ZnO structure, complex agent (MEA) was used for the hydration and condensation reaction. According to the change of MEA concentration, porosity and pore arrangement, specific surface area could be changed. As complex agent concentration decreased, pore ordering was increased and gas sensitivity has the high value (8.01).

Influence of Al doping on microstructural, optical and photocatalytic properties of sol–gel based nanostructured zinc oxide films on glass

RSC Advances ◽  
2014 ◽  
Vol 4 (23) ◽  
pp. 11552-11563 ◽  
Author(s):  
Moumita Pal ◽  
Susanta Bera ◽  
Saswati Sarkar ◽  
Sunirmal Jana
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxygen Vacancies ◽  
Rhodamine 6G ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Al Doping ◽  
Al Content ◽  
Zinc Oxide Films ◽  
Rhodamine 6G Dye

Al content dependent defect concentration (oxygen vacancies) and Rhodamine 6G dye photodecomposition activity of sol–gel nanostructured ZnO thin films.

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