Influence of Al doping on microstructural, optical and photocatalytic properties of sol–gel based nanostructured zinc oxide films on glass

RSC Advances ◽  
2014 ◽  
Vol 4 (23) ◽  
pp. 11552-11563 ◽  
Author(s):  
Moumita Pal ◽  
Susanta Bera ◽  
Saswati Sarkar ◽  
Sunirmal Jana

Al content dependent defect concentration (oxygen vacancies) and Rhodamine 6G dye photodecomposition activity of sol–gel nanostructured ZnO thin films.

2013 ◽  
Vol 667 ◽  
pp. 193-199 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Mohamed Zahidi Musa ◽  
Mohd Zainizan Sahdan ◽  
Mohamad Rusop Mahmood

Recent research papers for zinc oxide (ZnO) thin films prepared by dip-coating method are reviewed. The aim is on the factors affecting the properties of ZnO thin films prepared by dip-coating method and the preparation of ZnO solution precursor using sol-gel process. Several of journals have been discovered to find out the related study on this topic. It was found that solution chemical equilibrium, substrate and thermal processing are the factors that contribute to the various properties of ZnO thin films. This review hopefully can help in improving the properties of ZnO thin film for possible applications to photoconductor, integrated sensor, transparent conducting oxide electrodes, optoelectronic devices and so on.


2019 ◽  
Vol 26 (03) ◽  
pp. 1850158 ◽  
Author(s):  
MARYAM MOTALLEBI AGHGONBAD ◽  
HASSAN SEDGHI

Zinc Oxide thin films were deposited on glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. Zinc acetate dihydrate was used with different molar concentrations of 0.15, 0.25 and 0.5 M. Optical properties of ZnO thin films such as dielectric constants, absorption coefficient, Urbach energy and optical band gap energy were calculated by spectroscopic ellipsometry (SE) method. The effect of zinc acetate concentration on optical properties of ZnO thin films is investigated. ZnO thin film with Zn concentration of 0.25 M had the highest optical band gap. Wemple DiDomenico oscillator model was used for calculation of the energy of effective dispersion oscillator, the dispersion energy, the high frequency dielectric constant, the long wavelength refractive index and the free carrier concentration.


2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).


2015 ◽  
Vol 1125 ◽  
pp. 106-110 ◽  
Author(s):  
Ili Liyana Khairunnisa Kamardin ◽  
Ainun Rahmahwati Ainuddin

Zinc Oxide (ZnO) known as wide band gap semiconductor with large excitation energy 60 meV, noncentral symmetry, piezoelectric and biocompatible for biomedical application are the unique characteristic that attract many researcher’s attention on ZnO nanostructure synthesis and physical properties. ZnO thin films were deposited on Si Glass substrate by a sol-gel process. The starting solution were prepare by dissolved zinc acetate dehydrate (ZnAc) and diethanolamine (DEA) in water (H2O) and 2-propanol (2-PrOH). 0 to 60 drops of NaOH were dropped into 100 ml sol-gel solution to study effect of sol-gel modification. ZnO thin films were obtained after preheating the spin coated thin films at 100 °C for 10 minutes after each coating. The coated substrates were undergone for Hot Water Treatment (HWT) process at 90 °C for 6 hours to grow ZnO nanostructures. The effects of sol-gel modification by drop of NaOH into the solution were studied. ZnO nanorods and nanoflakes were obtained after hot water treated at 90 °C for 6 hours with different amount of NaOH dropped directly in the sol-gel solution. On the basis of the changes in morphology and microstructure induced by hot water treatment, it is concluded that the amount of NaOH dropped into sol-gel effected morphology of ZnO growth.


RSC Advances ◽  
2014 ◽  
Vol 4 (91) ◽  
pp. 49723-49728 ◽  
Author(s):  
Sapna D. Ponja ◽  
Sanjayan Sathasivam ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt

Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C.


2009 ◽  
Vol 256 (3) ◽  
pp. 737-743 ◽  
Author(s):  
Mehmet Çopuroğlu ◽  
Shane O’Brien ◽  
Gabriel M. Crean

Author(s):  
Н.М. Денисов ◽  
Е.Б. Чубенко ◽  
В.П. Бондаренко ◽  
В.Е. Борисенко

AbstractStudy of structural, optical and photocatalytic properties of multilayered (1–8 layers) zinc oxide films deposited on glass substrates by sol-gel method showed, that after thermal treatment at 500°C they consist of random oriented hexagonal crystalline grains with size of 34–40 nm, forming larger particles with sizes of 100–150 nm, which do not depend on number of layers. With an increase in the number of layers, the intensity of exciton photoluminescence decreases by a factor of 10, the absorption of light in the visible and near IR ranges increases, and the efficiency of photocatalytic decomposition of the test organic dye rhodamine B increases by 10–12%. The observed changes are related to the increase in the total area of grain boundaries and to the change in the integral amount of oxygen vacancies and interstitial atoms as the number of layers increases, which makes it possible to control the properties of zinc oxide films for applications in optoelectronics, photovoltaics and photocatalysis.


2011 ◽  
Vol 14 (2) ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Elham Askari

AbstractManganese zinc oxide semiconductor thin films have been deposited by sol-gel process on glass substrate which was characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and UV-Vis spectroscopy (UV-Vis). The as deposited thin films on glass are monophasic with good crystallinity and hexagonal wurtzite structure. In order to increase the photocatalytic efficiency of the zinc oxide coatings the authors optimized the sol-gel process and doped the coatings with manganese. By slightly doping the zinc oxide films with 2 at% manganese the photocatalytic performance is increased compared to pure zinc oxide semiconductor thin films. The photocatalytic performance of the manganese zinc oxide films was evaluated by the decomposition of a textile dye (C.I. Reactive Yellow 86) (RY86) with UV light irradiation. This investigation will give a new insight to understanding the industrial textile dye photodegradation in aquatic environment.


2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.


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