scholarly journals High-Temperature Photovoltaic Effect in Heterojunction

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Hao Ni ◽  
Kun Zhao ◽  
Xiaojin Liu ◽  
Wenfeng Xiang ◽  
Songqing Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Oxide Heterostructures ◽  
Microelectronic Devices ◽  
Current Voltage ◽  
Higher Temperature ◽  
Open Circuit Photovoltage

We fabricated a heterojunction of /n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K. The rectifying behaviors vanished with the energy-band structure evolvement from 300 to 673 K. Under irradiation of a 248 nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically. This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature. PACS: 73.40.Lq, 71.27.+ a, 73.50.Pz.

On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices

2013 ◽  
Vol 91 (1) ◽  
pp. 60-63
Author(s):  
P.P. Ferguson ◽  
S. Gauvin ◽  
N. Beaudoin
Keyword(s):  
Short Duration ◽  
Short Circuit ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Electroluminescent Devices ◽  
Semiconductor Junction ◽  
Organic Electroluminescent ◽  
Open Circuit Photovoltage

Organic electroluminescent devices with an ITO/TPD/Alq3/Al structure are fabricated and tested for their photovoltaic properties. To produce an open-circuit photovoltage, a conditioning is required. Here, the conditioning is exposing the device to air for a short duration. Without this conditioning, the device produces a short-circuit photocurrent with practically no open-circuit photovoltage. Calculations and fits to the photovoltaic data show that this observation could be attributed to the formation of a metal–insulator–semiconductor junction between the Alq3 and the Al, where an insulating layer is created by this conditioning.

scholarly journals Effect of Deoxycholic Acid on the Performance of Liquid Electrolyte Dye-Sensitized Solar Cells Using a Perylene Monoimide Derivative

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ganesh D. Sharma ◽  
Rajnish Kurchania ◽  
Richard J. Ball ◽  
Mahesh S. Roy ◽  
John A. Mikroyannidis
Keyword(s):  
Deoxycholic Acid ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Liquid Electrolyte ◽  
Open Circuit ◽  
Charge Collection Efficiency ◽  
Dye Sensitized ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Open Circuit Photovoltage

The effect of coadsorption with deoxycholic acid (DCA) on the performance of dye-sensitized solar cell based on perylene monoimide derivative (PCA) as sensitizer and liquid electrolyte had been investigated. The current-voltage characteristics under illumination and incident photon to current efficiency (IPCE) spectra of the DSSCs showed that the coadsorption of DCA with the PCA dye results in a significant improvement in short circuit photocurrent and slight increase in the open circuit photovoltage, which lead to an overall power conversion efficiency. The enhancement of short circuit current was attributed to the increased electron injection efficiency from the excited state of PCA into the conduction band of TiO2and charge collection efficiency. The current-voltage characteristics in dark indicates a positive shift in the conduction which also supports the enhancement in the photocurrent. The coadsorption with DCA suppressed charge recombination as indicated from the electrochemical impedance spectra and thus improved the open circuit photovoltage.

Fabrication, Illumination Dependent Electrical and Photovoltaic Properties of Au/BOD-Pyr/n-Si/In Schottky Diode

2021 ◽  
Author(s):  
Onur Ongun ◽  
Enis Taşcı ◽  
Mustafa Emrullahoğlu ◽  
Ümmühan Akın ◽  
Nihat Tuğluoğlu ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Illumination Level ◽  
Photovoltaic Properties ◽  
Current Voltage ◽  
Homo And Lumo

Abstract 4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and  HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In photodiode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm2 illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm2 under the illumination level of 100 mW/cm2. These all findings suggest that Au/BOD-Pyr/n-Si/In device can be used as photodiode in optoelectronic applications.

scholarly journals Investigation of Electrical and Photovoltaic Properties of Au/n-Si Schottky diode with BOD-Z-EN Interlayer

2021 ◽  
Author(s):  
Ali Osman Tezcan ◽  
Serkan Eymur ◽  
Enis Taşcı ◽  
Mustafa Emrullahoğlu ◽  
Nihat Tuğluoğlu
Keyword(s):  
Fill Factor ◽  
Series Resistance ◽  
Short Circuit ◽  
Forward Bias ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Organic Layer ◽  
Photovoltaic Properties ◽  
Current Voltage ◽  
Device Properties

Abstract 4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (ΦB) and series resistance (Rs) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the ΦB ranged from 0.86 eV to 0.90 eV as the illumination condition changed from dark to 100 mW/cm2. Series resistance (Rs) values calculated using Cheung’s method were found to decrease with increasing illumination level. ໿The forward bias I-V characteristics of the diode were explained by the space charge limited current (SCLC) theory. The main photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a Voc of 0.15 V and Jsc of 0.01 mA/cm2 under 100 mw/cm2. Also, photosensitivity and photoresponsivity properties of the diode were determined. These all results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

scholarly journals Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Ft Ir

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

Thiocyanate Free Ruthenium(II) Complexes for Dye Sensitized Solar Cells (DSSCs)

2018 ◽  
Vol 382 ◽  
pp. 369-373
Author(s):  
Usana Mahanitipong ◽  
Preeyapat Prompan ◽  
Rukkiat Jitchati
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Visible Region ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Ligand Charge Transfer ◽  
Sensitized Solar Cells ◽  
Open Circuit Photovoltage

The four thiocyanate free ruthenium(II) complexes; [Ru(N^N)2(C^N)]PF6were synthesized and characterized for dye sensitized solar cells (DSSCs). The results showed that the broad absorptions covered the visible region from metal to ligand charge transfer (MLCT) were obtained with the main peaks at 560, 490 and 400 nm. The materials were studied DSSC performance under standard AM 1.5. Compound PP1 showed the power conversion efficiency (PCE) at 3.10%, with a short-circuit photocurrent density (Jsc) of 7.99 mA cm-2, an open-circuit photovoltage (Voc) of 563 mV and a high fill factor (ff) of 0.690.

scholarly journals Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Three Dimensional ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Order Of Magnitude ◽  
Individual Grains

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

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