scholarly journals In SituandEx SituStudies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
K. Aryal ◽  
H. Khatri ◽  
R. W. Collins ◽  
S. Marsillac
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Compressive Strain ◽  
Back Contact ◽  
Dc Magnetron Sputtering ◽  
Bulk Layer ◽  
Cigs Solar Cells ◽  
Deposited Films

Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized byin situand real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.

scholarly journals Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Weimin Li ◽  
Xia Yan ◽  
Armin G. Aberle ◽  
Selvaraj Venkataraj
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Surface Oxidation ◽  
Bottom Layer ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Individual Layer ◽  
Glass Substrates ◽  
Cigs Solar Cells

Molybdenum (Mo) thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS) solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP) deposited bottom layer and a low pressure (LP) deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

scholarly journals Influence of indium and hydrogen co-doping on optical and electrical properties of zinc oxide thin films deposited by DC magnetron sputtering

2019 ◽  
Vol 22 (2) ◽  
pp. 253-257
Author(s):  
Nguyen Huu Truong ◽  
Tinh Van Nguyen ◽  
Tuan Anh Thanh Pham ◽  
Dung Van Hoang ◽  
Hung Minh Vu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Hydrogen Plasma ◽  
Response Speed ◽  
Indium Content ◽  
Morphological Properties ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Introduction: ZnO-based thin films, known as potential transparent-conducting oxides (TCO), have still attracted much attention in applications for good-performance electrodes and inner layers in solar cells. Recently, the research tendency has focused on improving carrier mobility rather than carrier concentration to enhance performance and response speed of TCO thin films. In this work, Indium, and Hydrogen co-doped ZnO (HIZO) thin films were deposited by using DC magnetron sputtering technique in hydrogen-plasma atmosphere. Methods: Indium-doped ZnO ceramics were used as sputtering targets, in which, Indium content varied from 0.07 to 1.0 at.%. The electrical, optical, structural and surface morphological properties of the as-deposited films were investigated by using Hall effect-based measurement, UV-Vis spectra, X-ray diffraction (XRD) and fieldemission scanning electron microscopy (FE-SEM), respectively. Results: As a result, the HIZO films sputtered from the 0.1 at.% In-doped ZnO target and at H2/(H2+Ar) ratio of 3.5% exhibit high electron mobility (47 cm2/Vs), the lowest resistivity (4.9x10-4 Ω.cm) and sheet resistance (4.7 Ω/sq.), simultaneously, high average transmittance (>80%) in the visible – near IR spectrum regions. Conclusion: Based on these results, the HIZO films are considered as potential TCO thin films that can be well-used as transparent electrodes in solar cells.  

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (08) ◽  
pp. 1077-1083 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

scholarly journals Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

2016 ◽  
Vol 19 (4) ◽  
pp. 137-146
Author(s):  
Phuc Huu Dang ◽  
Nhan Van Pham ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
Ar Gas ◽  
Optimum Annealing Temperature ◽  
Quartz Glasses ◽  
P Type ◽  
Deposited Films

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

scholarly journals PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sudjatmoko Sudjatmoko ◽  
Suryadi Suryadi ◽  
Widdi Usada ◽  
Tono Wibowo ◽  
Wiryoadi Wiryoadi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Aluminium Doping ◽  
Deposited Films ◽  
Heated Glass

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING. Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering using targets composed of ZnO and Al2O3. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. The surface morphology and crystalline structure, as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis were observed that the optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when deposition temperature was raised from 200 to 400 oC. Films grown on 300 oC substrates showed a high conductivity value of 0.2 x 102 -1cm-1 and a visible transmission of about 85%. The growth temperatures of 300 oC, aluminium doping levels of 0.9 wt.% were preferable to achieve ZnO:Al films with optical and structural qualities as required for solar cell applications.

Effect of Sputtering Current on the Structure of TiCrN Thin Films Prepared from Mosaic Target by Reactive DC Magnetron Sputtering

2020 ◽  
Vol 901 ◽  
pp. 37-42
Author(s):  
Siriwat Alaksanasuwan ◽  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Solid Solution ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Elemental Composition ◽  
Dc Magnetron Sputtering ◽  
Lattice Constants ◽  
Deposited Films ◽  
Sputtering System

TiCrN thin films have been prepared using a reactive DC magnetron sputtering system from a mosaic target. The effects of sputtering current, in the range of 300 to 700 mA, on the structure of the thin films were investigated. The crystal structure, microstructure, thickness, and composition were characterized by GI-XRD, FE-SEM and EDS technique, respectively. The results revealed that all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited TiCrN films showed a nanostructure with a crystallite size less than 70 nm. The crystal sizes of all planes were in the range of 22.2 to 69.9 nm. The lattice constants were in the range of 4.149 Å to 4.175 Å. The thickness increases from 1630 nm to 4910 nm with increasing the sputtering current. The elemental composition (Ti Cr and N contents) of the as-deposited films were varied with the sputtering current. Lastly, the all of the thin films in this work showed compact columnar and dense morphology as a resulted of increasing the sputtering current.

Sign in / Sign up

Export Citation Format

Share Document