scholarly journals Elastic Modes of an Anisotropic Ridge Waveguide

2012 ◽  
Vol 2012 ◽  
pp. 1-14
Author(s):  
Ameya Galinde ◽  
Masoud Koochakzadeh ◽  
Abbas Abbaspour-Tamijani
Keyword(s):  
Infinite Plate ◽  
Single Crystal Silicon ◽  
Approximate Solutions ◽  
Free Edge ◽  
Critical Issue ◽  
Crystal Silicon ◽  
Ridge Waveguides ◽  
Edge Surface ◽  
Elastic Modes ◽  
Antisymmetric Solutions

A semi-analytical method for finding the elastic modes propagating along the edge of an anisotropic semi-infinite plate is presented. Solutions are constructed as linear combinations of a finite number of the corresponding infinite plate modes with the constraint that they decay in the direction perpendicular to the edge and collectively satisfy the free boundary condition over the edge surface. Such modes that are confined to the edge can be used to approximate solutions of acoustic ridge waveguides whose supporting structures are sufficiently far away from the free edge. The semi-infinite plate or ridge is allowed to be oriented arbitrarily in the anisotropic crystal. Modifications to the theory to find symmetric and antisymmetric solutions for special crystal orientations are also presented. Accuracy of the solutions can be improved by including more plate modes in the series. Numerical techniques to find modal dispersion relations and orientation dependent modal behavior, are discussed. Results for ridges etched in single crystal Silicon are found to be in good agreement with Finite Element simulations. It is found that variations in modal phase velocity with respect to crystal orientation are not significant, suggesting that anisotropy may not be a critical issue while designing ridge waveguides in Silicon.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

scholarly journals Effects of 5-Ammonium Valeric Acid Iodide as Additive on Methyl Ammonium Lead Iodide Perovskite Solar Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2512
Author(s):  
Daming Zheng ◽  
Changheng Tong ◽  
Tao Zhu ◽  
Yaoguang Rong ◽  
Thierry Pauporté
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Single Crystal Silicon ◽  
Mesoporous Structure ◽  
Valeric Acid ◽  
Electrical Impedance Spectroscopy ◽  
Lead Iodide ◽  
Crystal Silicon ◽  
Time Resolved ◽  
Hole Transporting

During the past decade, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has risen rapidly, and it now approaches the record for single crystal silicon solar cells. However, these devices still suffer from a problem of stability. To improve PSC stability, two approaches have been notably developed: the use of additives and/or post-treatments that can strengthen perovskite structures and the use of a nontypical architecture where three mesoporous layers, including a porous carbon backcontact without hole transporting layer, are employed. This paper focuses on 5-ammonium valeric acid iodide (5-AVAI or AVA) as an additive in methylammonium lead iodide (MAPI). By combining scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence (TRPL), current–voltage measurements, ideality factor determination, and in-depth electrical impedance spectroscopy (EIS) investigations on various layers stacks structures, we discriminated the effects of a mesoscopic scaffold and an AVA additive. The AVA additive was found to decrease the bulk defects in perovskite (PVK) and boost the PVK resistance to moisture. The triple mesoporous structure was detrimental for the defects, but it improved the stability against humidity. On standard architecture, the PCE is 16.9% with the AVA additive instead of 18.1% for the control. A high stability of TiO2/ZrO2/carbon/perovskite cells was found due to both AVA and the protection by the all-inorganic scaffold. These cells achieved a PCE of 14.4% in the present work.

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