scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

Deposition and Characterization of Carbon Nitride Films by Laser Processed Methods

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu ◽  
Michael A. George
Keyword(s):  
Thin Films ◽  
Comparative Analysis ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carbon Nitride ◽  
Pyrolytic Graphite ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Graphite Target

AbstractLaser assisted methods such as laser physical vapor deposition (LPVD) and laser induced chemical vapor deposition (LCVD) have been utilized to grow carbon nitride (CNx) films on various substrates. It has been shown that the both techniques produce good quality thin films of CNx. In LPVD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was to irradiate carbon-nitrogen containing mixtures such as C2H2/N2O/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.

scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

scholarly journals Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Direct Contact ◽  
Physical Vapor Deposition ◽  
Metal Films ◽  
Surface Alloying ◽  
X Ray ◽  
Physical Vapor Deposition Method

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

Spiral growth mode in DMDPC organic thin film transistors by physical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 50770-50775 ◽  
Author(s):  
Tianjun Liu ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jing Wang ◽  
Jingbo Lan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Physical Vapor Deposition ◽  
Organic Thin Films ◽  
Organic Thin Film Transistors ◽  
Spiral Growth ◽  
Organic Thin Film ◽  
Screw Dislocations

We report the observation of a screw-dislocation-driven spiral growth of DMDPC organic thin films. The existence of screw dislocations was clearly confirmed by the observations of outcropped stepsand spiral fringes.

MWCNTs - Ni-Cu NPs @ a-C:H thin films: Study of relation between the average diameters of CNTs with optical density and topological characterizations

2020 ◽  
Author(s):  
Samira Goudarzi ◽  
Vali Dalouji
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Optical Density ◽  
Vapor Deposition ◽  
High Spatial Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Rf Plasma ◽  
Minimum Value

Abstract In this paper, Ni-Cu NPs @ a-C:H thin films with different content of cooper by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition (RF-PECVD) were prepared from acetylene gas and Ni and Cu targets. The prepared samples as catalysts for growing multi-wall carbon nanotubes (MWCNTs) were used from liquid petroleum gas (LPG) by thermal chemical vapor deposition (TCVD) at 825 °C. The films deposited with 5% Cu have minimum value the average diameter of CNTs and were about 100 nm. The fractal dimensions and structural characteristics as well as optical density of Ni-Cu NPs thin films have been investigated. AFM images can estimate the lateral size of the nanoparticles on the films surface. These values for Ni NPs without Cu NPs @ a-C:H thin film and with Cu NPs thin film contenting 5%, 40%, 75% Cu are obtained about 7.2, 5.34, 6.04 and 11.16 nm respectively. The optical density (Dopt) of thin films was obtained from the relation Dopt = \alpha t. Films deposited with 75% Cu have maximum value of optical density specially in high energy. The spectral density power of all layers reflects the reverse flow changes,, especially in the high spatial frequency region, indicating the presence of fractal components in prominent topographies. Films deposited with 75% Cu have minimum value of fractal dimension. The diagram of the Bearing Area proportion the height shows the percentage of cavities and single-layers. It can be seen that the single-layer content of all films were about 95%.

Controlled Stress Refractory Metallizations

2001 ◽  
Vol 695 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Electrically Conductive ◽  
Complete Control ◽  
Chemical Inertness

ABSTRACTRhodium and iridium are highly electrically conductive refractory metals, which can be used as current-carrying thin-film metallizations. Their chemical inertness further enables their application at relatively high temperatures. However, due to the high elastic modulus of such metals, a residual tensile stress of 300 to 400 MPa is measured in evaporated thin films. We present novel results evidencing complete control over both the magnitude and the sign of the residual stress in such refractory thin films. The metallic layers are deposited by means of ion-beam-enhanced physical vapor deposition and both electrical resistivity and stress are controlled. Controlling the stress in this manner has enabled achieving thicker films and films with near-zero residual stress.

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