scholarly journals GaN-Based High-kPraseodymium Oxide Gate MISFETs withP2S5/(NH4)2SX+ UV Interface Treatment Technology

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Chao-Wei Lin ◽  
Hsien-Chin Chiu
Keyword(s):  
Electron Beam ◽  
Leakage Current ◽  
Flicker Noise ◽  
Surface States ◽  
Low Noise ◽  
Gate Insulator ◽  
High Electron ◽  
Praseodymium Oxide ◽  
Treatment Technology ◽  
Uv Illumination

This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX+ ultraviolet (UV) illumination. An electron-beam evaporated Pr2O3insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD), in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH4)2SXsolution and UV illumination before the gate insulator (Pr2O3) is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH4)2SXpretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm) are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3and high-kAlGaN/GaN MIS-HEMTs, with P2S5/(NH4)2SX+ UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures

2002 ◽  
Vol 719 ◽  
Author(s):  
L. Kurowski ◽  
S. Silvestre ◽  
D. Loridant-Bernard ◽  
E. Constant ◽  
M. Barbe ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energetic Electron ◽  
High Mobility ◽  
Surface States ◽  
Electron Excitation ◽  
High Electron ◽  
Electron Dose ◽  
Hydrogen Incorporation ◽  
Dose Threshold ◽  
Si Doped

AbstractHydrogen incorporation in n-type Si-doped GaAs epilayers is now a well-known process. This paper is devoted to the study of the stability of SiH (SiD) complexes when submitted to an electron beam in n-type Si-doped GaAs epilayer and also in 2D-AlGaAs heterostructures exposed to a hydrogen or deuterium plasma.The results obtained by Hall effect measurements on hydrogenated and deuterated GaAs epilayers with different thicknesses (0.2 and 0.35νm) and Si planar-doped AlGaAs/GaAs/InGaAs heterostructures exposed to an electron beam with different injection energies (10 to 50 keV) are presented. On one hand, the reactivation of Si dopants strongly decreases when deuterium is used. On the other hand, the study of this reactivation versus injection energies of electrons suggests an energetic electron excitation effect rather than a minority carrier generation effect. In addition, for the 0.2νm thick GaAs epilayer and the 2D heterostructures, the free carrier density does not vary significantly for low electron densities, and as a consequence, the reactivation of the Si dopants occurs above an electron dose threshold. This phenomenon might be attributed to the filling of surface states as the dopants are progressively reactivated.As a result, due to the electron dose threshold as well as their high electron mobility properties, Si planar-doped AlGaAs/GaAs/InGaAs heterostructures are particularly interesting to reactivate dopants, with a good spatial contrast, using an electron beam irradiation and the effects described in this paper could open the fabrication of high mobility 1D or 2D mesoscopic structures for electronic or optoelectronic applications.

LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION

2004 ◽  
Vol 14 (03) ◽  
pp. 762-768
Author(s):  
S. A. VITUSEVICH ◽  
S. V. DANYLYUK ◽  
N. KLEIN ◽  
M. V. PETRYCHUK ◽  
A. E. BELYAEV ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Flicker Noise ◽  
Low Frequency ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Excess Noise ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
Non Linear

Transport and low frequency noise properties of undoped AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with 33% and 75% Al mole fractions in the ohmic and non-linear regimes of applied voltages are studied. In contrast to the low Al mole fraction, the noise properties of 75 % content structures are not affected by passivation. At small voltages both kinds of structures demonstrate about the same level of l/f excess noise. Deviations from conventional flicker noise were observed at high applied voltages. Additionally, differences in noise behaviour between the two structures were revealed. In the 75% content structures, a noise level suppression was registered in the non-linear regime, which is important for the development of low noise oscillator circuits.

scholarly journals Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 970
Author(s):  
Yuan-Ming Chen ◽  
Hsien-Cheng Lin ◽  
Kuan-Wei Lee ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Current Density ◽  
Electron Mobility ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Mos

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

A study of proximity effects at high electron-beam voltages for x-ray mask fabrication part 1: Additive mask processes

1991 ◽  
Vol 13 (1-4) ◽  
pp. 165-172 ◽  
Author(s):  
M.G. Rosenfield ◽  
S.A. Rishton ◽  
D.P. Kern ◽  
D.E. Seeger ◽  
C.A. Whiting
Keyword(s):  
Electron Beam ◽  
Proximity Effects ◽  
High Electron ◽  
X Ray ◽  
Mask Fabrication
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