scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Influence of a self-assembled monolayer on indium-zinc-oxide semiconductor thin-film transistors

2014 ◽  
Vol 65 (10) ◽  
pp. 1555-1558 ◽  
Author(s):  
Yong Suk Yang ◽  
In-Kyu You ◽  
Sung-Hoon Hong ◽  
Ju-hyeon Park ◽  
Ho-Gyeong Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Self Assembled Monolayer ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film ◽  
Self Assembled

Amorphous Indium–Zinc Oxide Semiconductor Thin-Film Transistors

2014 ◽  
Vol 9 (3) ◽  
pp. 388-391
Author(s):  
Jun-Yi Li ◽  
Sheng-Po Chang ◽  
Wen-Chen Hua ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

2015 ◽  
Vol 62 (9) ◽  
pp. 2871-2877 ◽  
Author(s):  
Dieter Spiehl ◽  
Marc Haming ◽  
Hans Martin Sauer ◽  
Klaus Bonrad ◽  
Edgar Dorsam
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

2009 ◽  
Vol 95 (25) ◽  
pp. 252103 ◽  
Author(s):  
Chang-Jung Kim ◽  
Sangwook Kim ◽  
Je-Hun Lee ◽  
Jin-Seong Park ◽  
Sunil Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Indium Zinc Oxide

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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