Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

2009 ◽  
Vol 95 (25) ◽  
pp. 252103 ◽  
Author(s):  
Chang-Jung Kim ◽  
Sangwook Kim ◽  
Je-Hun Lee ◽  
Jin-Seong Park ◽  
Sunil Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

Influence of a self-assembled monolayer on indium-zinc-oxide semiconductor thin-film transistors

2014 ◽  
Vol 65 (10) ◽  
pp. 1555-1558 ◽  
Author(s):  
Yong Suk Yang ◽  
In-Kyu You ◽  
Sung-Hoon Hong ◽  
Ju-hyeon Park ◽  
Ho-Gyeong Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Self Assembled Monolayer ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film ◽  
Self Assembled

Amorphous Indium–Zinc Oxide Semiconductor Thin-Film Transistors

2014 ◽  
Vol 9 (3) ◽  
pp. 388-391
Author(s):  
Jun-Yi Li ◽  
Sheng-Po Chang ◽  
Wen-Chen Hua ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide ◽  
Semiconductor Thin Film

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

2015 ◽  
Vol 62 (9) ◽  
pp. 2871-2877 ◽  
Author(s):  
Dieter Spiehl ◽  
Marc Haming ◽  
Hans Martin Sauer ◽  
Klaus Bonrad ◽  
Edgar Dorsam
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Indium Zinc Oxide

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

2015 ◽  
Vol 15 (6) ◽  
pp. 675-678 ◽  
Author(s):  
Jihyun Ka ◽  
Edward Namkyu Cho ◽  
Min-Jung Lee ◽  
Jae-Min Myoung ◽  
Ilgu Yun
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Semiconductor Thin Film ◽  
Electrode Metal

Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator

2010 ◽  
Vol 49 (8) ◽  
pp. 08JF02 ◽  
Author(s):  
Woong-Sun Kim ◽  
Yeon-Keon Moon ◽  
Sih Lee ◽  
Byung-Woo Kang ◽  
Kyung-Taek Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Semiconductor Thin Film

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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