scholarly journals Progress in Thin Film Solar Cells Based onCu2ZnSnS4

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hongxia Wang

The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,Ga)Se2(CIGS) in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4(CZTS) semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

RSC Advances ◽  
2014 ◽  
Vol 4 (18) ◽  
pp. 9118-9125 ◽  
Author(s):  
Si-Nae Park ◽  
Shi-Joon Sung ◽  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Mungunshagai Gansukh ◽  
...  

Effective adding/removal of organic chemicals to/from CZTS precursor thin films for preparing uniform CZTS thin films with optimal photovoltaic properties was achieved by pre-annealing of CZTS precursors containing thiourea.


2012 ◽  
Vol 182-183 ◽  
pp. 237-240
Author(s):  
Nian Jing Ji ◽  
Ke Gao Liu ◽  
Zhong Quan Ma

CZTS thin film, a potential candidate for application as absorber layer in thin film solar cells, has drawn much attention in these years due to its excellent photoelectric performance and nontoxic components. It provides a brief description of the development of CZTS thin film for solar cells, and surveys several methods of depositing CZTS films, then introduces the crystal structure of CZTS which is a problem for composition ratio affecting the properties of CZTS thin films. Here we also outline the development and the structure of solar cells based on CZTS thin films.


2016 ◽  
Vol 18 (2) ◽  
pp. 550-557 ◽  
Author(s):  
Jiahua Tao ◽  
Junfeng Liu ◽  
Leilei Chen ◽  
Huiyi Cao ◽  
Xiankuan Meng ◽  
...  

Cu2ZnSnS4 (CZTS) thin films with fine control over composition and pure phase were fabricated by sulfurization of co-electroplated Cu–Zn–Sn–S precursors.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Takashi Sagawa ◽  
Osamu Yoshikawa ◽  
Hirokuni Jintoku ◽  
Makoto Takafuji ◽  
Hirotaka Ihara ◽  
...  

AbstractMorphologically controllable thin-films of a zinc-containing tetraphenylporphyrin (ZnTPP) combined with an L-glutamide lipid has been fabricated and complexation of ZnTPP with fullerene was examined for organic thin-film solar cells, which gave 3 times enhancement of solar energy-to-electricity conversion efficiency through chlorobenzene-annealing in comparison with the conversion efficiency of untreated one.


2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Pei-Ling Chen ◽  
Po-Wei Chen ◽  
Min-Wen Hsiao ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai

The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-typeμc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties ofμc-SiOx:H films were also discussed. Regarding the dopedμc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventionalμc-Si:H(p) as window layer inμc-Si:H single-junction solar cells, the application ofμc-SiOx:H(p) increased theVOCand led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment ofμc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) ofμc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-typeμc-SiOx:H films achieved aVOCof 1.37 V,JSCof 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%.


2008 ◽  
Vol 51 ◽  
pp. 125-130 ◽  
Author(s):  
Rong Fuh Louh ◽  
Warren Wu

Chemical bath deposition (CBD) is a fairly simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be prepared on the flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of varying acidity. This study particularly aims at the growth dependence and optical property of ZnS thin films in the CBD process by different experiment parameters, whereas we intend to choose suitable types of zinc ionic precursors to be coupled with various CBD parameters such as reaction temperature and time, precursor concentration, types and complexing agents as well as post-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the adequate growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The results would lead to a potential application of buffer layer for the Cu (In,Ga)Se2 based thin film solar cells. The analytic instrument including SEM, AFM, UV-VIS were used to examine the CBD-derived nanosized ZnS buffer layers for the thin film solar cells. The ZnS thin films prepared by the chemical bath deposition in this study results in film thickness of 80 ~ 100 nm, high transmittance of 80~85% and the energy gap of 3.89 ~ 3.98 eV.


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