scholarly journals Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
M. Amirhoseiny ◽  
Z. Hassan ◽  
S. S. Ng ◽  
M. A. Ahmad
Keyword(s):  
Thin Films ◽  
Indium Nitride ◽  
Nanocrystalline Structure ◽  
Reactive Sputtering ◽  
Gas Mixture ◽  
Deposition Condition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ar Gas

Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64 nm for InN films grown at N2 : Ar ratio of 100 : 0, 75 : 25, and 50 : 50, respectively. The Raman spectra indicates well defined peaks at 578, 583, and 583 cm−1, which correspond to the A1(LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50 N2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E1(TO)] phonon mode of the InN at 479 cm−1just for film that were deposited at 50 : 50 N2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N2 : Ar gas mixture of 50 : 50.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

X-Ray Photoelectron Spectroscopy Study of Pt-Oxide Thin Films Deposited by Reactive Sputtering Using O2/Ar Gas Mixtures

1999 ◽  
Vol 38 (Part 1, No. 8) ◽  
pp. 4872-4875 ◽  
Author(s):  
Min-Cherl Jung ◽  
Hyeong-Do Kim ◽  
Moonsup Han ◽  
William Jo ◽  
Dong Chun Kim
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Reactive Sputtering ◽  
Gas Mixtures ◽  
Spectroscopy Study ◽  
Oxide Thin Films ◽  
X Ray ◽  
Ar Gas

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

scholarly journals Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

2015 ◽  
Vol 60 (3) ◽  
pp. 2173-2182 ◽  
Author(s):  
J. Kusiński ◽  
A. Kopia ◽  
Ł. Cieniek ◽  
S. Kąc ◽  
A. Radziszewska
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Pulsed Laser ◽  
Nanocrystalline Structure ◽  
X Ray Diffraction ◽  
Pulsed Electron Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Basic Parameters ◽  
Selection Of

Abstract In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi2O3, La1−xSrxCoO3, La1−xCaxCoO3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.

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