scholarly journals Synthesis of Vertically Aligned Dense ZnO Nanowires

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Lihong Gong ◽  
Xiang Wu ◽  
Huibo Chen ◽  
Fengyu Qu ◽  
Maozhong An

We reported the synthesis of vertically aligned dense ZnO nanowires using Zn powder as the source material by a hydrothermal method and a postannealing process at 200°C. The as-synthesized ZnO nanowires are 100–200 nm in diameter and several micrometers in length and each nanowire has a tapered tip. The morphologies of the products remain after post-annealing treatment. Structural analysis indicates the ZnO nanowire is single crystalline and grows along the [0001] direction. The possible growth mechanism for ZnO nanowire bundles is proposed.

RSC Advances ◽  
2015 ◽  
Vol 5 (83) ◽  
pp. 67752-67758 ◽  
Author(s):  
S. L. Cheng ◽  
J. H. Syu ◽  
S. Y. Liao ◽  
C. F. Lin ◽  
P. Y. Yeh

We report here the first study of the growth kinetics of vertically-aligned ZnO nanowire arrays grown on Al-doped ZnO (AZO) seed layer-coated substrates by a hydrothermal method.


2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen

2013 ◽  
Vol 115 (3) ◽  
pp. 953-960 ◽  
Author(s):  
Clotaire Chevalier-César ◽  
Martine Capochichi-Gnambodoe ◽  
Yamin Leprince-Wang

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83743-83747 ◽  
Author(s):  
Quanhua Zhang ◽  
Ding Wang ◽  
Ying Xu ◽  
Pengpeng Wang ◽  
Xianying Wang

A nano energy converter consisting of vertically aligned piezoelectric ZnO nanowires and a temperature-responsive polymer, which can generate electric power while it is cooled down.


2019 ◽  
Vol 59 (1) ◽  
pp. 015503
Author(s):  
Shuo Zhang ◽  
Yunyu Wang ◽  
Fang Ren ◽  
Tao Feng ◽  
Rongqiao Wan ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (86) ◽  
pp. 69925-69931 ◽  
Author(s):  
C. Opoku ◽  
A. S. Dahiya ◽  
F. Cayrel ◽  
G. Poulin-Vittrant ◽  
D. Alquier ◽  
...  

We demonstrate single crystalline ZnO nanowire (NW) production using hydrothermal process. Single NW field-effect transistors (FETs) and functional piezoelectric nanogenerators (NGs) are demonstrated by thermal annealing of the NWs in air at ~450 °C.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1500
Author(s):  
Gillsang Han ◽  
Minje Kang ◽  
Yoojae Jeong ◽  
Sangwook Lee ◽  
Insun Cho

The construction of a heterostructured nanowires array allows the simultaneous manipulation of the interfacial, surface, charge transport, and transfer properties, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowires array (HNA). Vertically aligned ZnO nanowires array (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded, fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowires array.


2017 ◽  
Vol 5 (15) ◽  
pp. 3770-3778 ◽  
Author(s):  
Xiaofang Liu ◽  
Chengcheng Hao ◽  
He Jiang ◽  
Min Zeng ◽  
Ronghai Yu

Hierarchical NiCo2O4/Co3O4/NiO composite was fabricated through a facile hydrothermal method, followed by a post-annealing treatment.


Author(s):  
Gill Sang Han ◽  
Min Je Kang ◽  
Yoo Jae Jeong ◽  
Sangwook Lee ◽  
In Sun Cho

Abstract The construction of a heterostructured nanowire array allows the manipulation of the interfacial, surface, charge transport, and transfer properties simultaneously, offering new opportunities to achieve multi-functionality for various applications. Herein, we developed a facile thermal evaporation and post-annealing method to synthesize ternary-Zn2SnO4/binary-ZnO radially heterostructured nanowire arrays (HNA). Vertically aligned ZnO nanowire arrays (3.5 μm in length) were grown on a ZnO-nanoparticle-seeded fluorine-doped tin oxide substrate by a hydrothermal method. Subsequently, the amorphous layer consisting of Zn-Sn-O complex was uniformly deposited on the surface of the ZnO nanowires via the thermal evaporation of the Zn and Sn powder mixture in vacuum, followed by post-annealing at 550 °C in air to oxidize and crystallize the Zn2SnO4 shell layer. The use of a powder mixture composed of elemental Zn and Sn (rather than oxides and carbon mixture) as an evaporation source ensures high vapor pressure at a low temperature (e.g., 700 °C) during thermal evaporation. The morphology, microstructure, and charge-transport properties of the Zn2SnO4/ZnO HNA were investigated by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and electrochemical impedance spectroscopy. Notably, the optimally synthesized Zn2SnO4/ZnO HNA shows an intimate interface, high surface roughness, and superior charge-separation and -transport properties compared with the pristine ZnO nanowire array.


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