scholarly journals Theoretical Modeling and Computational Simulation of Electronic Properties of Nanomaterials

2011 ◽  
Vol 2011 ◽  
pp. 1-2
Author(s):  
Shaogang Hao ◽  
Zhirong Liu ◽  
Junqiang Lu ◽  
Gang Zhou
Keyword(s):  
Electronic Properties ◽  
Computational Simulation ◽  
Theoretical Modeling

Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures

2011 ◽  
Vol 248 (8) ◽  
pp. 1837-1852 ◽  
Author(s):  
Liverios Lymperakis ◽  
Hazem Abu-Farsakh ◽  
Oliver Marquardt ◽  
Tilmann Hickel ◽  
Jörg Neugebauer
Keyword(s):  
Electronic Properties ◽  
Semiconductor Nanostructures ◽  
Theoretical Modeling ◽  
Extended Defects ◽  
Growth Processes ◽  
Nitride Semiconductor

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

The role of ligands in electron transport in nanocrystal solids

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 23028-23035
Author(s):  
Artem R. Khabibullin ◽  
Alexander L. Efros ◽  
Steven C. Erwin
Keyword(s):  
Electron Transport ◽  
Theoretical Modeling

Theoretical modeling of wavefunction overlap in nanocrystal solids elucidates the important role played by ligands in electron transport.

Hysteresis in spectral state transitions – a challenge for theoretical modeling

2005 ◽  
Vol 432 (1) ◽  
pp. 181-187 ◽  
Author(s):  
E. Meyer-Hofmeister ◽  
B. F. Liu ◽  
F. Meyer
Keyword(s):  
Theoretical Modeling ◽  
State Transitions ◽  
Spectral State

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties
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