Electronic Properties of Self-Organized Nanostructures: Theoretical Modeling on the Basis of the Scanning Tunneling Microscopy Characterization

2009 ◽  
Vol 4 (1) ◽  
pp. 3-19 ◽  
Author(s):  
V. M. Fomin ◽  
L. F. Chibotaru
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Theoretical Modeling ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Microscopy Characterization

Scanning Tunneling Microscopy Investigations of Self-Organized Poly(3-hexylthiophene) Two-Dimensional Polycrystals

2003 ◽  
Vol 15 (11) ◽  
pp. 881-884 ◽  
Author(s):  
B. Grévin ◽  
P. Rannou ◽  
R. Payerne ◽  
A. Pron ◽  
J.-P. Travers
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Self Organized

scholarly journals On-surface synthesis of singly and doubly porphyrin-capped graphene nanoribbon segments

2021 ◽  
Vol 12 (1) ◽  
pp. 247-252
Author(s):  
Luis M. Mateo ◽  
Qiang Sun ◽  
Kristjan Eimre ◽  
Carlo A. Pignedoli ◽  
Tomas Torres ◽  
...  
Keyword(s):  
High Resolution ◽  
Dft Calculations ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Graphene Nanoribbon ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Singly and doubly porphyrin-capped graphene nanoribbon segments are reported and their electronic properties are studied by high-resolution scanning tunneling microscopy and spectroscopy, and DFT calculations.

Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Scanning Tunneling Microscopy Study ◽  
Island Density

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

High-Resolution Scanning Tunneling Microscopy Characterization of Mixed Monolayer Protected Gold Nanoparticles

ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 8529-8539 ◽  
Author(s):  
Quy Khac Ong ◽  
Javier Reguera ◽  
Paulo Jacob Silva ◽  
Mauro Moglianetti ◽  
Kellen Harkness ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Mixed Monolayer ◽  
Microscopy Characterization

Identifying the electronic properties of the Ge(111)-(2×1) surface by low-temperature scanning tunneling microscopy

JETP Letters ◽  
2005 ◽  
Vol 82 (5) ◽  
pp. 279-283 ◽  
Author(s):  
P. I. Arseyev ◽  
N. S. Maslova ◽  
V. I. Panov ◽  
S. V. Savinov ◽  
C. Van Haesendonck
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Scanning
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