scholarly journals Heat Transfer of DE-Series MOSFETs

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
Arthur James Swart
Keyword(s):  
Heat Transfer ◽  
Ambient Temperature ◽  
Power Electronics ◽  
High Power ◽  
Temperature Rise ◽  
Electronic Communication ◽  
Drain Current ◽  
The Past ◽  
And Performance ◽  
Performance Results

MOSFET devices have developed significantly over the past few years to become the number one choice for high-power applications in power electronics and electronic communication. Commercially available devices (such as the IXYS RF manufactured) now operate into the VHF range with output RF powers of up to 300 W. They are optimized for linear operation and suitable for broadcast and communication applications. This paper presents the heat transfer out of an IXZ210N50L MOSFET which is sandwiched between two identical heatsinks. The results reveal a linear decrease in heat flowing away from the top of the MOSFET when compared to the bottom of the MOSFET for each step increase of drain current. Two graphs (representing the top and bottom heatsinks connected to the MOSFET device) contrast the temperature rise for the Bisink technique when the drain current through the IXZ210N50L MOSFET is kept constant at 5 A. The Bisink technique has the advantages of lower on-state resistances and higher output powers when compared to the traditional mounting using only one heatsink, resulting in improved reliability and performance. Results further reveal that the ambient temperature must be measured in the vicinity of the heatsink.

A Novel Package-integrated Cyclone Cooler for the Thermal Management of Power Electronics

2021 ◽  
Author(s):  
Rinaldo Miorini ◽  
Darin J Sharar ◽  
Arun V. Gowda ◽  
Cathleen Hoel ◽  
Bryan Whalen ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
Two Phase Flow ◽  
Junction Temperature ◽  
Phase Flow ◽  
Two Phase ◽  
Temperature Reduction ◽  
The Impact

Abstract In order for electronics packaging power density to increase, innovations and improvements in heat transfer are required. Electrification of transportation has the potential for significant fuel and energy savings. Changing to an electrified drive train requires reliable and efficient power electronics to provide power conversion between AC motors and DC energy storage. For high power transportation systems like aircraft or heavy vehicles, the power density of these power electronics needs to be improved. Power density is also an enabler for high power military devices that must be used and transported via air, ground, and sea. This paper summarizes the outcome of a collaborative and multi-disciplinary research effort aimed at co-designing novel electronics cooling device that utilizes two-phase fluid flow. Two-phase flow cooling has been known for decades as well as the risks associated with it: critical heat flux, dry-out and thermal runaway. Our research de-risks the two-phase cooling phenomenon by swirling the flow to remove the bubbles from the wall and confining them at the core of the cooler. The combined effects of gas phase removal, enhanced nucleation and dramatic liquid film agitation and rupture have been quantified by our experiments: double the heat transfer coefficient with only 13% increase in pressure drop. Besides advanced fluid-dynamics, our Package Integrated Cyclone Cooler (PICCO) utilizes cutting edge packaging and additive manufacturing technology such as direct deposition of a metal substrate and circuits (dies) on a complex helical cooler that can only be manufactured via 3D printing. By co-designing and testing the cooler we have quantified the impact of the swirled flow on the junction temperature with respect to a conventional (non-swirl) two-phase-flow-cooled power electronics package. At steady state, our post-test thermal simulations predict a junction temperature reduction from 185°C to 75°C at the same power dissipation. When the heat load is unsteady (EPA Urban Drive Cycle), the junction temperature reduction is 140°C to 60°C.

Method activation end date in the past. direction:re

Auditor ◽  
2015 ◽  
Vol 1 (11) ◽  
pp. 18-29 ◽  
Author(s):  
Булыга ◽  
R. Bulyga
Keyword(s):  
Intellectual Capital ◽  
The Past ◽  
And Performance ◽  
Performance Results ◽  
Capital Transaction

Th e article contains a review of modern concepts of how to compile an organization’s complex public reports. It focuses on the leading Russian scientifi c school in this area. Th e author provides the review of the recent publications of the scientists belonging to this school; presents the scheme of such category as business as a triad of capital, transaction and performance results; off ers a schematic structure of the notion “intellectual capital of business”.

Simulations of Metal Foam Cooling of High-Power Electronics Using the Equivalent Thermal Conductivity

2003 ◽  
Author(s):  
Nihad Dukhan ◽  
Pable D. Quinones
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Power Electronics ◽  
Thermal Management ◽  
High Power ◽  
Metal Foam ◽  
Maximum Temperature ◽  
Transfer Model ◽  
Aluminum Foams ◽  
Equivalent Thermal Conductivity

A one-dimensional heat transfer model for open-cell metal foam is presented. The model includes both the conduction and the convection in the ligaments and in the pores of the foam. It uses the typical foam parameters provided by the manufacturers. Three aluminum foams having different relative surface areas, relative densities, ligament diameters, and number of pores per inch are analyzed and an effective thermal conductivity is determined. The heat transfer increases with the number of pores per inch. The resulting improvement in heat transfer can be as high as 57 percent over solid aluminum. The model is general enough such that it can handle other types of foam and geometries. For simulations using packages for thermal management, the foam can be modeled as a solid having an equivalent conductivity with an effective convection heat transfer on its outer surfaces. This eliminates the need to model the microscopic flow and heat transfer in and around the pores. It also allows quick feasibility studies and comparisons of different arrangements using aluminum foams for thermal management systems of high-power electronics. A few such simulations are presented in this work. The simulations show a big promise for using the foam in place of the traditional heat sinks for cooling high-power electronics: they reduce the cooling system’s weight substantially and reduce the maximum temperature significantly.

scholarly journals Flow Boiling of Low-Pressure Water in Microchannels of Large Aspect Ratio

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2689
Author(s):  
Liang Chen ◽  
Xingchen Li ◽  
Runfeng Xiao ◽  
Kunpeng Lv ◽  
Xue Yang ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Power Electronics ◽  
Thermal Management ◽  
High Power ◽  
Flow Boiling ◽  
Width Ratio ◽  
Bubble Behavior ◽  
Uniform Wall Temperature ◽  
Pressure Water ◽  
Uniform Wall

Flow boiling heat transfer in microchannels can provide a high cooling rate, while maintaining a uniform wall temperature, which has been extensively studied as an attractive solution for the thermal management of high-power electronics. The depth-to-width ratio of the microchannel is an important parameter, which not only determines the heat transfer area but also has dominant effect on the heat transfer mechanisms. In the present study, numerical simulations based on the volume of fraction models are performed on the flow boiling in very deep microchannels. The effects of the depth-to-width ratio on the heat transfer coefficient and pressure drop are discussed. The bubble behavior and heat transfer characteristics are analyzed to explain the mechanism of heat transfer enhancement. The results show the very deep microchannels can effectively enhance the heat transfer, lower the temperature rise and show promising applications in the thermal management of high-power electronics.

Comparison of Different Single-Phase Liquid Jet Impingement Cooling Configurations in the Context of Thermal Management in Power Electronics

2005 ◽  
Author(s):  
Sreekant V. J. Narumanchi ◽  
Desikan Bharathan ◽  
Vahab Hassani
Keyword(s):  
Heat Transfer ◽  
Free Surface ◽  
Power Electronics ◽  
Single Phase ◽  
Numerical Study ◽  
Jet Impingement ◽  
Cooling Power ◽  
Practical Implementation ◽  
Chip Surface ◽  
The Past

Jet impingement has been an attractive cooling option in a number of industries over the past few decades. Over the past fifteen years, jet impingement has been explored as a cooling option in microelectronics. Recently, interest has also been expressed by the automotive industry in exploring jet impingement as an option for cooling power electronics components. The main purpose of this paper is to compare the different single-phase jet impingement configurations, which have been reported in the literature, primarily from a heat transfer viewpoint. The discussion is also from the viewpoint of the cooling of IGBTs (insulated-gate bipolar transistors), which are found in inverters in hybrid automobiles. In the literature, single and multiple submerged as well as free-surface jets have been investigated. A number of correlations for heat transfer from the simulated chip surface have been presented. These correlations, as well as the results from them will be discussed in detail. We will also present results for the average heat transfer coefficient on the chip surface as a function of both coolant mass flow rate as well as velocity. All the results presented are for water jets. A numerical study of some of the single-jet cooling configurations (free-surface as well as submerged) is also performed and the CFD results are compared to the results obtained from the empirical correlations. The pressure drop associated with these jet impingement systems is also examined briefly. From the standpoint of practical implementation, high velocity jets have the potential to erode the material on which they impinge. This paper will briefly discuss erosion rates associated with jets impinging on aluminum and copper.

scholarly journals Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate

2021 ◽  
Vol 2070 (1) ◽  
pp. 012057
Author(s):  
Preethi Elizabeth Iype ◽  
V Suresh Babu ◽  
Geenu Paul
Keyword(s):  
Ambient Temperature ◽  
Thermal Performance ◽  
Sapphire Substrate ◽  
High Power ◽  
Power Dissipation ◽  
Drain Current ◽  
Electrical Performance ◽  
Dc Characteristics ◽  
Overall Performance ◽  
Reduced Temperature

Abstract In this paper investigation on electrical and thermal performance of the AlGaAs/GaAs HEMT device is carried out by comparing the device grown on substrates like 4H-SiC and Sapphire. The investigation was carried out based on Silvaco TCAD Atlas simulation. The DC characteristics of the device with varying ambient temperature were evaluated. A deterioration of drain current from 0.9 mA to 0.5 mA is observed as temperature rises from 300K to 500K on 4H-SiC substrate. The HEMT grown on 4H-SiC substrate has a high power dissipation, resulting in reduced temperature compared to sapphire substrate. This increases the lifetime of the device by 1000s of hours and also its overall performance. The HEMT proposed here is found to have an electrically and thermally optimal performance on 4H-SiC substrate than on sapphire

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