scholarly journals Nanocomposite Materials of Alternately StackedC60Monolayer and Graphene

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Makoto Ishikawa ◽  
Shu Kamiya ◽  
Shoji Yoshimoto ◽  
Masaru Suzuki ◽  
Daisuke Kuwahara ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Graphene Sheet ◽  
Preparation Method ◽  
Nanocomposite Materials ◽  
Graphene Sheets ◽  
The Novel ◽  
Graphite Intercalation

We synthesized the novel nanocomposite consisting alternately of a stacked single graphene sheet and aC60monolayer by using the graphite intercalation technique in which alkylamine molecules help intercalate largeC60molecules into the graphite. Moreover, it is found that the intercalatedC60molecules can rotate in between single graphene sheets by usingC13NMR measurements. This preparation method provides a general way for intercalating huge fullerene molecules into graphite, which will lead to promising materials with novel mechanical, physical, and electrical properties.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Graphene Oxides Dispersing and Hosting Graphene Sheets for Unique Nanocomposite Materials

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3052-3058 ◽  
Author(s):  
Leilei Tian ◽  
Parambath Anilkumar ◽  
Li Cao ◽  
Chang Yi Kong ◽  
Mohammed J. Meziani ◽  
...  
Keyword(s):  
Nanocomposite Materials ◽  
Graphene Sheets ◽  
Graphene Oxides

Thermal, mechanical, and electrical properties of difunctional and trifunctional epoxy blends with nanoporous materials

2021 ◽  
pp. 009524432110604
Author(s):  
Ganesan J ◽  
Jeyadevi S ◽  
Siva Kaylasa Sundari S ◽  
Arunjunai Raj M ◽  
Pitchaimari G ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Evolved Gas Analysis ◽  
Dielectric Strength ◽  
Nanoporous Materials ◽  
Gas Analysis ◽  
The Novel ◽  
Evolved Gas ◽  
Mechanical And Electrical Properties ◽  
Thermal And Electrical Properties ◽  
Epoxy Blends

In the present study, the aim is to synthesize the particulate nanocomposites with difunctional and trifunctional epoxy blend as matrix and synthesized nanoporous materials as fillers. Organic/inorganic hybrid networks were prepared by the novel solvent free method. Viscoelastic, thermal, and electrical properties of di- and trifunctional epoxy and the effect of different nanoparticles in the particulate nanocomposites have been studied by dynamic mechanical analyzer, thermogravimetry (TGA), and dielectric strength. Epoxy mixed with different compositions of TGPAP and particulate nanocomposites by the addition of different types of nanomaterials shows higher storage modulus than the pure epoxy. The addition of TGPAP and nanofillers decreases the thermal stability of epoxy matrix. The evolved gas analysis (TG-FTIR) was also done in order to study the products formed during degradation. An increase in dielectric strength and impact strength (4%) was also observed in the particulate nanocomposites.

scholarly journals The crystal structure and electrical properties of the oxide ion conductor Ba3WNbO8.5

2018 ◽  
Vol 6 (13) ◽  
pp. 5290-5295 ◽  
Author(s):  
K. S. McCombie ◽  
E. J. Wildman ◽  
S. Fop ◽  
R. I. Smith ◽  
J. M. S. Skakle ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
The Novel ◽  
Ion Conductor ◽  
Oxide Ion Conductor ◽  
Oxide Ion

The crystal structure of the novel oxide ion conductor Ba3WNbO8.5.

scholarly journals CASIMIR EFFECTS IN GRAPHENE SYSTEMS: UNEXPECTED POWER LAWS

2012 ◽  
Vol 14 ◽  
pp. 531-540 ◽  
Author(s):  
BO E. SERNELIUS
Keyword(s):  
Graphene Sheet ◽  
Power Law ◽  
Power Laws ◽  
Graphene Sheets ◽  
Zero Temperature ◽  
Actual Distance ◽  
Distance Dependence

We present calculations of the zero-temperature Casimir interaction between two freestanding graphene sheets as well as between a graphene sheet and a substrate. Results are given for undoped graphene and for a set of doping levels covering the range of experimentally accessible values. We describe different approaches that can be used to derive the interaction. We point out both the predicted power law for the interaction and the actual distance dependence.

Use of the graphite intercalation compound to produce low-defect graphene sheets for the photocatalytic enhancement of graphene/TiO2 composites

2019 ◽  
Vol 235 ◽  
pp. 121755 ◽  
Author(s):  
Ananya Tibodee ◽  
Phetladda Pannak ◽  
Khrongkhwan Akkarachaneeyakorn ◽  
Thammanoon Thaweechai ◽  
Weekit Sirisaksoontorn
Keyword(s):  
Intercalation Compound ◽  
Graphene Sheets ◽  
Graphite Intercalation Compound ◽  
Graphite Intercalation

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 1103-1106 ◽  
Author(s):  
Hazem Elgabra ◽  
Amna Siddiqui ◽  
Shakti Singh
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Integrated Circuits ◽  
Logic Circuit ◽  
Digital Logic ◽  
Harsh Environment ◽  
The Novel ◽  
Attractive Candidate ◽  
Silicon Based

Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

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