scholarly journals Energy of the Conduction Band in Near Critical Point Fluids

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
C. M. Evans ◽  
G. L. Findley
Keyword(s):  
Critical Point ◽  
Conduction Band ◽  
Supercritical Fluids ◽  
Critical Density ◽  
Field Ionization ◽  
Experimental Measurements ◽  
Number Density ◽  
Band Energy ◽  
Dense Gases ◽  
Solvent Density

The study of the evolution of the conduction band in dense gases and supercritical fluids near the critical point has been complicated by a lack of precise experimental measurements. Both photoemission from an electrode immersed in the fluid and field ionization of a molecule doped into the fluid have been used to probe solvent density effects on the energy of an excess electron as a function of fluid number density and temperature. In this perspective, we present recent experimental results that show a strong critical point effect on the minimum conduction band energy near the critical density and temperature of a fluid. We also discuss the recent development of a new theoretical model that advances our understanding of the density and temperature dependence of the conduction band minimum in near critical point fluids.

Determination of the conduction band energy minimum in fluid argon by means of field ionization

1996 ◽  
Vol 105 (4) ◽  
pp. 1305-1310 ◽  
Author(s):  
A. K. Al‐Omari ◽  
K. N. Altmann ◽  
R. Reininger
Keyword(s):  
Conduction Band ◽  
Field Ionization ◽  
Energy Minimum ◽  
Band Energy ◽  
Fluid Argon

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

Conduction band energy in dense ethane fluid

1979 ◽  
Vol 71 (1) ◽  
pp. 550-551 ◽  
Author(s):  
Yoh‐ichi Yamaguchi ◽  
Toshitaka Nakajima ◽  
Masaru Nishikawa
Keyword(s):  
Conduction Band ◽  
Band Energy

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

2019 ◽  
Vol 126 (8) ◽  
pp. 083106 ◽  
Author(s):  
M. Welna ◽  
Ł Janicki ◽  
W. M. Linhart ◽  
T. Tanaka ◽  
K. M. Yu ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Band Energy

Large Conduction Band Energy Offset Is Critical for High Fill Factors in Inorganic Perovskite Solar Cells

2020 ◽  
Vol 5 (7) ◽  
pp. 2343-2348 ◽  
Author(s):  
Qiong Wang ◽  
Fengshuo Zu ◽  
Pietro Caprioglio ◽  
Christian M. Wolff ◽  
Martin Stolterfoht ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Perovskite Solar Cells ◽  
Band Energy ◽  
Inorganic Perovskite

Electrolyte Electroreflectance of Boron Phosphide (BP)

1996 ◽  
Vol 451 ◽  
Author(s):  
E. Schroten ◽  
A. Goossens ◽  
J. Schoonman
Keyword(s):  
Thin Films ◽  
Energy Level ◽  
Critical Point ◽  
Conduction Band ◽  
Interference Effects ◽  
First Report ◽  
Direct Bandgap ◽  
Incident Photon ◽  
Boron Phosphide ◽  
Pronounced Peak

ABSTRACTAn electrolyte electroreflectance study has been performed on boron phosphide thin films epitaxially grown on silicon (100) substrates. To our knowledge, this paper is the first report on the electrolyte electroreflectance spectrum of BP. All our boron phosphide of 1.5 μm thick films show a pronounced peak at the energy 4.25 eV, indicating a critical point in the valence or conduction band of the semiconductor. Photoreflectance measurements confirm these results. The 4.25 eV energy level is much lower than previously reported direct bandgap values of BP. The electrolyte electroreflectance spectrum of much thinner layers shows, besides the 4.25 eV peak, some other features at still lower incident photon energies caused by interference effects.

scholarly journals Structure-controlled CdS(0D, 1D, 2D) embedded onto 2D ZnS porous nanosheets for highly efficient photocatalytic hydrogen generation

RSC Advances ◽  
2017 ◽  
Vol 7 (40) ◽  
pp. 24864-24869 ◽  
Author(s):  
Junmei Wang ◽  
Zhijian Wang ◽  
Li Li ◽  
Jiazang Chen ◽  
Jianfeng Zheng ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Conduction Band ◽  
Hydrogen Generation ◽  
Generation Rate ◽  
Band Energy ◽  
Highly Efficient ◽  
Photocatalytic Hydrogen Generation ◽  
Porous Nanosheets ◽  
Speed Up

Modulating the CdS morphology with a 1D structure with high conduction band energy can speed up the electron transfer to Pt sites and increase the photocatalytic hydrogen generation rate from 7.7 to 26 mmol g−1 h−1.

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