Conduction band energy in dense ethane fluid

1979 ◽  
Vol 71 (1) ◽  
pp. 550-551 ◽  
Author(s):  
Yoh‐ichi Yamaguchi ◽  
Toshitaka Nakajima ◽  
Masaru Nishikawa
Keyword(s):  
Conduction Band ◽  
Band Energy

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

2019 ◽  
Vol 126 (8) ◽  
pp. 083106 ◽  
Author(s):  
M. Welna ◽  
Ł Janicki ◽  
W. M. Linhart ◽  
T. Tanaka ◽  
K. M. Yu ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Band Energy

Large Conduction Band Energy Offset Is Critical for High Fill Factors in Inorganic Perovskite Solar Cells

2020 ◽  
Vol 5 (7) ◽  
pp. 2343-2348 ◽  
Author(s):  
Qiong Wang ◽  
Fengshuo Zu ◽  
Pietro Caprioglio ◽  
Christian M. Wolff ◽  
Martin Stolterfoht ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Perovskite Solar Cells ◽  
Band Energy ◽  
Inorganic Perovskite

scholarly journals Structure-controlled CdS(0D, 1D, 2D) embedded onto 2D ZnS porous nanosheets for highly efficient photocatalytic hydrogen generation

RSC Advances ◽  
2017 ◽  
Vol 7 (40) ◽  
pp. 24864-24869 ◽  
Author(s):  
Junmei Wang ◽  
Zhijian Wang ◽  
Li Li ◽  
Jiazang Chen ◽  
Jianfeng Zheng ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Conduction Band ◽  
Hydrogen Generation ◽  
Generation Rate ◽  
Band Energy ◽  
Highly Efficient ◽  
Photocatalytic Hydrogen Generation ◽  
Porous Nanosheets ◽  
Speed Up

Modulating the CdS morphology with a 1D structure with high conduction band energy can speed up the electron transfer to Pt sites and increase the photocatalytic hydrogen generation rate from 7.7 to 26 mmol g−1 h−1.

Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J. L. Hoyt ◽  
T. O. Mitchell ◽  
K. Rim ◽  
D. V. Singh ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Secondary Ion Mass Spectrometry ◽  
Early Stage ◽  
Compressive Strain ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Atomic Percent ◽  
Energy Splitting ◽  
Strained Si ◽  
Band Energy

AbstractEpitaxial Si1-x-yGexCy and Si1-yCy layers grown on Si are opening up new possibilities for bandstructure engineering of electronic devices. Thin Si1-yCy layers containing a few atomic percent substitutional carbon, grown on Si substrates, experience biaxial tensile strain, which produces a conduction band energy splitting that is expected to be favorable for in-plane electron transport. For other applications, C may be useful as a means of compensating the compressive strain of Ge in ternary Si1-x-yGexCy alloys. Although the understanding of the electronic properties of these materials is still at an early stage, interesting trends are emerging.A key issue for synthesis of these alloys is the low equilibrium solubility of carbon in silicon. However, a number of non-equilibrium methods have been employed to grow these materials. This work focuses on the properties of Si1-yCy and Si1-x-yGexCy grown by chemical vapor deposition. There is a strong influence of the growth conditions on the fraction of the total carbon concentration which is substitutional on the silicon lattice. Using low temperatures (e.g. 550°C) and very high silane partial pressures for Si1-yCy growth, good agreement is obtained between the carbon contents determined by x-ray diffraction and secondary ion mass spectrometry, for carbon concentrations up to about 1.8 atomic percent. Metal-oxidesemiconductor capacitors fabricated on Si1-x-yGexCy and Si/Si1-yCy epitaxial layers show wellbehaved electrical characteristics. Temperature dependent capacitance-voltage analysis is used to extract the band offsets, and indicates that the conduction band energy is lowered as carbon is added to Si. Complementary to the case of strained Si1-xGex grown on Si, for which most of the energy offset is in the valence band, the band offset appears primarily in the conduction band for Si1-yCy/Si heterojunctions.

Reactions of radiation-induced electrons with carbon dioxide in inert cryogenic films: matrix tuning of the excess electron interactions in solids

2020 ◽  
Vol 22 (25) ◽  
pp. 14155-14161
Author(s):  
Ekaterina S. Shiryaeva ◽  
Irina A. Baranova ◽  
Daniil A. Tyurin ◽  
Vladimir I. Feldman
Keyword(s):  
Carbon Dioxide ◽  
Conduction Band ◽  
Excess Electron ◽  
Free Electrons ◽  
Band Energy ◽  
Solid Films ◽  
Radiation Induced ◽  
Electron Interactions

The attachment of radiation-induced electrons to carbon dioxide in inert solid films is controlled by the conduction band energy of quasi-free electrons in the medium.

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