scholarly journals Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

2010 ◽  
Vol 2010 ◽  
pp. 1-19 ◽  
Author(s):  
Udai P. Singh ◽  
Surya P. Patra
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Transparent Conducting Oxide ◽  
Optoelectronic Properties ◽  
Metal Foil ◽  
Film Material ◽  
Cigs Thin Film ◽  
Flexible Metal ◽  
Wideband Gap

For some time, the chalcopyrite semiconductor CuInSe2and its alloy with Ga and/or S [Cu(InGa)Se2or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

scholarly journals Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Lukas Kranz ◽  
Christina Gretener ◽  
Julian Perrenoud ◽  
Rafael Schmitt ◽  
Fabian Pianezzi ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Metal Foil ◽  
High Efficiency Solar Cells ◽  
Flexible Metal

Band offset of high efficiency CBD-ZnS/CIGS thin film solar cells

2003 ◽  
Vol 431-432 ◽  
pp. 242-248 ◽  
Author(s):  
Tokio Nakada ◽  
Masashi Hongo ◽  
Eiji Hayashi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Thin Film Solar Cells ◽  
Band Offset ◽  
Cigs Thin Film

scholarly journals Optimization of Intrinsic ZnO Thickness in Cu(In,Ga)Se2-Based Thin Film Solar Cells

Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1365 ◽  
Author(s):  
Salh Alhammadi ◽  
Hyeonwook Park ◽  
Woo Kyoung Kim
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Transparent Conducting Oxide ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Shunt Resistance ◽  
Typical Structure

The typical structure of high efficiency Cu(InGa)Se2 (CIGS)-based thin film solar cells is substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al(AZO) where the sun light comes through the transparent conducting oxide (i.e., i-ZnO/AZO) side. In this study, the thickness of an intrinsic zinc oxide (i-ZnO) layer was optimized by considering the surface roughness of CIGS light absorbers. The i-ZnO layers with different thicknesses from 30 to 170 nm were deposited via sputtering. The optical properties, microstructures, and morphologies of the i-ZnO thin films with different thicknesses were characterized, and their effects on the CIGS solar cell device properties were explored. Two types of CIGS absorbers prepared by three-stage co-evaporation and two-step sulfurization after the selenization (SAS) processes showed a difference in the preferred crystal orientation, morphology, and surface roughness. During the subsequent post-processing for the fabrication of the glass/Mo/CIGS/CdS/i-ZnO/AZO device, the change in the i-ZnO thickness influenced the performance of the CIGS devices. For the three-stage co-evaporated CIGS cell, the increase in the thickness of the i-ZnO layer from 30 to 90 nm improved the shunt resistance (RSH), open circuit voltage, and fill factor (FF), as well as the conversion efficiency (10.1% to 11.8%). A further increas of the i-ZnO thickness to 170 nm, deteriorated the device performance parameters, which suggests that 90 nm is close to the optimum thickness of i-ZnO. Conversely, the device with a two-step SAS processed CIGS absorber showed smaller values of the overall RSH (130–371 Ω cm2) than that of the device with a three-stage co-evaporated CIGS absorber (530–1127 Ω cm2) ranging from 30 nm to 170 nm of i-ZnO thickness. Therefore, the value of the shunt resistance was monotonically increased with the i-ZnO thickness ranging from 30 to 170 nm, which improved the FF and conversion efficiency (6.96% to 8.87%).

Effects of different Cs distribution in the film on the performance of CIGS thin film solar cells

2021 ◽  
Vol 222 ◽  
pp. 110917
Author(s):  
Shiqing Cheng ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
Zhichao He ◽  
Baolai Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film

Stable, high efficiency thin film solar cells produced by electrodeposition of cadmium telluride

1991 ◽  
Vol 23 (2-4) ◽  
pp. 388-393 ◽  
Author(s):  
A.K. Turner ◽  
J.M. Woodcock ◽  
M.E. Ozsan ◽  
J.G. Summers ◽  
J. Barker ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cadmium Telluride ◽  
High Efficiency ◽  
Thin Film Solar Cells
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