scholarly journals Optimization of Intrinsic ZnO Thickness in Cu(In,Ga)Se2-Based Thin Film Solar Cells

Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1365 ◽  
Author(s):  
Salh Alhammadi ◽  
Hyeonwook Park ◽  
Woo Kyoung Kim
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Transparent Conducting Oxide ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Shunt Resistance ◽  
Typical Structure

The typical structure of high efficiency Cu(InGa)Se2 (CIGS)-based thin film solar cells is substrate/Mo/CIGS/CdS/i-ZnO/ZnO:Al(AZO) where the sun light comes through the transparent conducting oxide (i.e., i-ZnO/AZO) side. In this study, the thickness of an intrinsic zinc oxide (i-ZnO) layer was optimized by considering the surface roughness of CIGS light absorbers. The i-ZnO layers with different thicknesses from 30 to 170 nm were deposited via sputtering. The optical properties, microstructures, and morphologies of the i-ZnO thin films with different thicknesses were characterized, and their effects on the CIGS solar cell device properties were explored. Two types of CIGS absorbers prepared by three-stage co-evaporation and two-step sulfurization after the selenization (SAS) processes showed a difference in the preferred crystal orientation, morphology, and surface roughness. During the subsequent post-processing for the fabrication of the glass/Mo/CIGS/CdS/i-ZnO/AZO device, the change in the i-ZnO thickness influenced the performance of the CIGS devices. For the three-stage co-evaporated CIGS cell, the increase in the thickness of the i-ZnO layer from 30 to 90 nm improved the shunt resistance (RSH), open circuit voltage, and fill factor (FF), as well as the conversion efficiency (10.1% to 11.8%). A further increas of the i-ZnO thickness to 170 nm, deteriorated the device performance parameters, which suggests that 90 nm is close to the optimum thickness of i-ZnO. Conversely, the device with a two-step SAS processed CIGS absorber showed smaller values of the overall RSH (130–371 Ω cm2) than that of the device with a three-stage co-evaporated CIGS absorber (530–1127 Ω cm2) ranging from 30 nm to 170 nm of i-ZnO thickness. Therefore, the value of the shunt resistance was monotonically increased with the i-ZnO thickness ranging from 30 to 170 nm, which improved the FF and conversion efficiency (6.96% to 8.87%).

High efficiency and high open-circuit voltage quadruple-junction silicon thin film solar cells for future electronic applications

2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Silicon Based

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.

Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 51-60 ◽  
Author(s):  
Neelkanth G. Dhere ◽  
Ashwani Kaul ◽  
Helio Moutinho
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Cigs Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

ABSTRACTSodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

Stable, high efficiency thin film solar cells produced by electrodeposition of cadmium telluride

1991 ◽  
Vol 23 (2-4) ◽  
pp. 388-393 ◽  
Author(s):  
A.K. Turner ◽  
J.M. Woodcock ◽  
M.E. Ozsan ◽  
J.G. Summers ◽  
J. Barker ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cadmium Telluride ◽  
High Efficiency ◽  
Thin Film Solar Cells

Buffer layer replacement: A method for increasing the conversion efficiency of CIGS thin film solar cells

Optik ◽  
2017 ◽  
Vol 136 ◽  
pp. 222-227 ◽  
Author(s):  
M. Moradi ◽  
R. Teimouri ◽  
M. Saadat ◽  
M. Zahedifar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film

scholarly journals Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Ft Ir

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

High efficiency Cu2ZnSn(SxSe1−x)4 thin film solar cells by thermal co-evaporation

2011 ◽  
Author(s):  
Byungha Shin ◽  
Kejia Wang ◽  
Oki Gunawan ◽  
Kathleen B. Reuter ◽  
S. Jay Chey ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Thin Film Solar Cells
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