scholarly journals Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
G. Zatryb ◽  
A. Podhorodecki ◽  
J. Misiewicz ◽  
J. Wojcik ◽  
P. Mascher
Keyword(s):  
Chemical Vapor Deposition ◽  
Wavelength Range ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Pump Wavelength ◽  
Size Dependent ◽  
Si Nanocrystals ◽  
Oxide Matrix

Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped withEr3+ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc toEr3+ions is discussed.

Growth of Highly Luminescent Silicon Nanocrystals by Rapid Thermal Chemical Vapor Deposition

2005 ◽  
Vol 277-279 ◽  
pp. 977-982 ◽  
Author(s):  
Hea Jeong Cheong ◽  
Jung Hyun Kang ◽  
Jae Kwon Kim ◽  
Kim Yong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Thickness Variation ◽  
Deposition Condition ◽  
Thermal Chemical Vapor Deposition ◽  
Si Nanocrystals ◽  
Si Wafer

We investigate the growth of highly luminescent silicon nanocrystals by rapid thermal chemical vapor deposition (RTCVD), employing SiH4 and N2O as source gases. For [N2O]/[SiH4] = 7 ∼ 8 and a growth temperature of 650°C, we obtain the optimized deposition condition for silicon rich oxide (SRO) layer having highly luminescent Si nanocrystals after post-deposition annealing. The cross sectional transmission electron microscope investigation reveals the existence of Si nanocrystals in the SRO matrix. Thus, the photoluminescence (PL) from the SRO layer is attributed to the quantum confinement effect of carriers in Si nanocrystals. Based on a single layer growth study, we fabricate ultra-thin SRO/SiO2 superlattice having 25 periods on a 3-inch Si wafer. The superlattice has continuous thickness variation from the center to the edge positions of the Si wafer due to inherent wafer temperature variation during growth. Photoluminescence spectra show a systematic blue-shift from a thicker position (center position) to a thinner position (edge position) which is indicative of nanocrystal size control by SRO layer thickness in the superlattice.

Nonlinear Optical Properties of Si Nanocrystals

2006 ◽  
Vol 958 ◽  
Author(s):  
Rita Spano ◽  
Massimo Cazzanelli ◽  
Nicola Daldosso ◽  
Zeno Gaburro ◽  
Luigi Ferraioli ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Nonlinear Optical ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties ◽  
Si Nanocrystals ◽  
Optical Refraction ◽  
Laser Sources

ABSTRACTA systematic study of nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapor deposition (PECVD) is reported. Nonlinear optical refraction and absorption have been measured by z-scan technique at three different time regimes and at different wavelengths to investigate both the thermal and electronic responses. For this purpose three different laser sources have been used. Different behaviors, as expected from the theory, for different pump pulse durations are observed.

Nitrogen Influence on the Photoluminescence Properties of Silicon Nanocrystals

2006 ◽  
Vol 958 ◽  
Author(s):  
Luigi Ferraioli ◽  
Pierluigi Bellutti ◽  
Nicola Daldosso ◽  
Viviana Mulloni ◽  
Lorenzo Pavesi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Chemical Vapor ◽  
Photoluminescence Properties ◽  
Oxide Matrix

ABSTRACTWe have performed photoluminescence analysis of silicon rich oxide (SRO) and silicon rich oxynitride (SRON) samples deposited by plasma enhanced chemical vapor deposition (PECVD) and thermally annealed to cause the formation of silicon nanocrystals (Si-nc). Our purpose was to investigate the influence of nitrogen embedded into the oxide matrix on the photoluminescence properties of Si-nc. We found a large incorporation of silicon and a decrease of its diffusivity when the oxide is nitrogen rich. As a consequence the rate of crystallization for Si aggregates is slowed down when nitrogen is present in the oxide matrix.

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