scholarly journals MOCVD of Field Emission Phosphors using a Liquid Delivery System

1997 ◽  
Vol 495 ◽  
Author(s):  
T. S. Moss ◽  
B. F. Espinoza ◽  
K. V. Salazar ◽  
R. C. Dye
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
Delivery System ◽  
High Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Surface Areas ◽  
Field Emission Displays ◽  
Liquid Delivery

ABSTRACTThin film phosphors for field emission displays show the potential to overcome the life-limiting problems that traditional powders face because of their high surface areas. By depositing a fully dense thin film, the surface area can be dramatically reduced, while the electrical and thermal conductivity is increased. Metal organic chemical vapor deposition offers the ability to deposit high quality, dense films that are crystalline-as-deposited and at temperatures low enough to allow for inexpensive glass. Deposition has been produced from mixtures of Y(tmhd)3, TEOS, Tb(tmhd)3, and O2 using a liquid delivery system. Coatings were shown to be composed of Y, Si, and Tb by x-ray fluorescence, but x-ray diffraction did not show any crystallinity. Excitation using radioluminescence produced a peak in the visible green at approximately 540 nm, indicative of the excitation of Tb3+. The morphology of the deposition was smooth, with surface features on the order of one micron and below. Some limited microcracking was also observed in the morphology because of the thermal expansion mismatch.

scholarly journals Texture Analysis in LD-MOCVD Processed Thin Film Giant Magnetoresistant (LaM)MnO3 Materials

2000 ◽  
Vol 34 (2-3) ◽  
pp. 65-74 ◽  
Author(s):  
H. Garmestani ◽  
X. Dong ◽  
L. Brandao ◽  
K. -H. Dahmen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Mismatch Strain ◽  
Pole Figures ◽  
Lattice Mismatch Strain

Thin films of La0.67M0.33MnO3 (M=Sr), LSMO were deposited on three different substrates of LAO, Sapphire, and Y-ZrO2 (YSZ) using metal–organic chemical vapor deposition methods. The effect of texture and orientation on the resistance (0 and 6T) and magnetoresistance (MR) of (LSMO) thin films on various substrates has been investigated. X-ray pole figures were measured using Philips X’Pert X-ray diffractometer equipped with the PopLa analysis package. A direct correlation was observed between the lattice mismatch strain and the structure of the thin film growth. LSMO/LAO seems to be the most perfect system for epitaxial growth due to the negligible lattice-mismatch (∼2%). The dominant orientation changes for the films deposited on LAO [100] and LAO [110] substrates while the transition temperature from ferromagnetic to paramagnetic state of the film on LAO [100] is 50 K higher than that of the film on LAO [100]. The MR data and TMI temperature were measured using standard 4-point resistivity devices and SQUID.

Properties of Diamond-Like Carbon for Thin Film Microcathodes for Field Emission Displays

1996 ◽  
Vol 424 ◽  
Author(s):  
J Robertson ◽  
W I Milne
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
Electron Affinity ◽  
Diamond Like Carbon ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Field Emission Displays ◽  
Chemical Inertness ◽  
Strong Candidate

AbstractDiamond-like carbon is a strong candidate for field emission microcathodes for field emission displays because of its low electron affinity and chemical inertness. The field emission properties of various types of diamond-like carbon such as a-C:H and ta-C are reviewed in the framework of a bonding model of their affinity.

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Large field emission from carbon nanotubes grown on patterned catalyst thin film by thermal chemical vapor deposition

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Field ◽  
Thermal Chemical Vapor Deposition

scholarly journals Advances in Nanostructured Metal-Encapsulated Porous Organic-Polymer Composites for Catalyzed Organic Chemical Synthesis

Catalysts ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 492 ◽  
Author(s):  
Wilhemina Sebati ◽  
Suprakas Ray
Keyword(s):  
Binding Sites ◽  
Heterogeneous Catalysts ◽  
Acid Catalysis ◽  
High Surface ◽  
Organic Polymer ◽  
Organic Chemical ◽  
Characterization Methods ◽  
Catalytic Activities ◽  
Surface Areas ◽  
Nanostructured Metal

Porous organic polymers (POPs) are of growing research interest owing to their high surface areas, stabilities, controllable chemical configurations, and tunable pore volumes. The molecular nanoarchitecture of POP provides metal or metal oxide binding sites, which is promising for the development of advanced heterogeneous catalysts. This article highlights the development of numerous kinds of POPs and key achievements to date, including their functionalization and incorporation of nanoparticles into their framework structures, characterization methods that are predominantly in use for POP-based materials, and their applications as catalysts in several reactions. Scientists today are capable of preparing POP-based materials that show good selectivity, activity, durability, and recoverability, which can help overcome many of the current environmental and industrial problems. These POP-based materials exhibit enhanced catalytic activities for diverse reactions, including coupling, hydrogenation, and acid catalysis.

scholarly journals Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

2020 ◽  
Vol 10 (9) ◽  
pp. 3050 ◽  
Author(s):  
Aditya Prabaswara ◽  
Jens Birch ◽  
Muhammad Junaid ◽  
Elena Alexandra Serban ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Alternative Methods ◽  
Organic Chemical ◽  
Large Area ◽  
Material Quality ◽  
Pulsed Dc ◽  
Metal Organic ◽  
Magnetron Sputter

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.

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