scholarly journals High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Andreas Schmitt-Sody ◽  
Andreas Velten ◽  
Ye Liu ◽  
Ladan Arissian ◽  
Jean-Claude Diels
Keyword(s):  
Continuous Wave ◽  
Modulation Depth ◽  
Ring Cavity ◽  
Multiple Quantum Well ◽  
Average Power ◽  
External Cavity ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Hybrid Mode ◽  
20 Nm

We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth) and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Stable continuous-wave mode-locked laser from a 1645 nm Er:YAG ceramic oscillator

2022 ◽  
Author(s):  
Yangyu Liu ◽  
Xue Cao ◽  
AnHua Xian ◽  
Guangmiao Liu ◽  
Wei zhou ◽  
...  
Keyword(s):  
Solid State ◽  
Pulse Width ◽  
Peak Power ◽  
Continuous Wave ◽  
Modulation Depth ◽  
Average Power ◽  
Mode Locking ◽  
Wave Mode ◽  
Semiconductor Saturable Absorber ◽  
Continuous Wave Mode

Abstract We demonstrate stable continuous-wave mode-locking (CWML) pulses around 1645nm by employing the home-made Er:YAG ceramic. By using a fiber laser and semiconductor saturable absorber mirror (SESAM) with modulation depth of 1.2%, we get ML pulses with the output average power up to 815 mW, the pulse width shortened as ~4 ps, and the peak power of 1.8 kW. With the SESAM of modulation depth of 2.4%, the second-order harmonic ML pulses were also obtained. As far as we know, this is the first report of CWML from Er3+-doped ceramics and also the shortest pulse duration in Er3+-doped solid-state oscillators.

108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber

1990 ◽  
Vol 56 (4) ◽  
pp. 310-311 ◽  
Author(s):  
Steve Sanders ◽  
Lars Eng ◽  
Joel Paslaski ◽  
Amnon Yariv
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Multiple Quantum Well ◽  
Mode Locking ◽  
Multiple Quantum ◽  
Passive Mode

Mode locking of a continuous-wave titanium-doped sapphire laser using a linear external cavity

1990 ◽  
Vol 15 (7) ◽  
pp. 378 ◽  
Author(s):  
P. M. W. French ◽  
S. M. J. Kelly ◽  
J. R. Taylor
Keyword(s):  
Continuous Wave ◽  
External Cavity ◽  
Mode Locking ◽  
Sapphire Laser

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

2003 ◽  
Vol 82 (15) ◽  
pp. 2386-2388 ◽  
Author(s):  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
Noble M. Johnson
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off

2000 ◽  
Vol 639 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Indium Gallium Nitride ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Light Output ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Thermal Impedance ◽  
Indium Gallium ◽  
Lift Off

ABSTRACTContinuous-wave (cw) indium-gallium nitride (InGaN) multiple-quantum-well (MQW) laser diodes (LDs) were successfully transferred from sapphire onto copper and diamond substrates using a two-step laser lift-off (LLO) process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. Increased light output for LDs on diamond were also measure with a maximum output of 80 mW.

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