scholarly journals Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
Juthika Basak ◽  
Ling Liao ◽  
Ansheng Liu ◽  
Doron Rubin ◽  
Yoel Chetrit ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Extinction Ratio ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Dispersion Effect ◽  
Optical Modulators ◽  
Mos Capacitor ◽  
Silicon Photonic ◽  
Made In

This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of 4 dB and a pn-diode-based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

High-speed silicon photonic optical interconnects for cryogenic readout (Conference Presentation)

2020 ◽  
Author(s):  
Steven B. Estrella ◽  
Takako Hirokawa ◽  
Aaron Maharry ◽  
Daniel S. Renner ◽  
Clint L. Schow
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Silicon Photonic

Progress in silicon platforms for integrated optics

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 205-214 ◽  
Author(s):  
Ari Novack ◽  
Matt Streshinsky ◽  
Ran Ding ◽  
Yang Liu ◽  
Andy Eu-Jin Lim ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Speed ◽  
Passive Components ◽  
Development Costs ◽  
Silicon Photonic ◽  
Building Systems ◽  
Recent Developments ◽  
Process Risk ◽  
Further Development ◽  
Made In

AbstractRapid progress has been made in recent years repurposing CMOS fabrication tools to build complex photonic circuits. As the field of silicon photonics becomes more mature, foundry processes will be an essential piece of the ecosystem for eliminating process risk and allowing the community to focus on adding value through clever design. Multi-project wafer runs are a useful tool to promote further development by providing inexpensive, low-risk prototyping opportunities to academic and commercial researchers. Compared to dedicated silicon manufacturing runs, multi-project-wafer runs offer cost reductions of 100× or more. Through OpSIS, we have begun to offer validated device libraries that allow designers to focus on building systems rather than modifying device geometries. The EDA tools that will enable rapid design of such complex systems are under intense development. Progress is also being made in developing practical optical and electronic packaging solutions for the photonic chips, in ways that eliminate or sharply reduce development costs for the user community. This paper will provide a review of the recent developments in silicon photonic foundry offerings with a focus on OpSIS, a multi-project-wafer foundry service offering a silicon photonics platform, including a variety of passive components as well as high-speed modulators and photodetectors, through the Institute of Microelectronics in Singapore.

scholarly journals Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (1) ◽  
pp. 24 ◽  
Author(s):  
Papichaya Chaisakul ◽  
Vladyslav Vakarin ◽  
Jacopo Frigerio ◽  
Daniel Chrastina ◽  
Giovanni Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Silicon Germanium ◽  
Optical Interconnects ◽  
Stark Effect ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Absorption Mechanism

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

scholarly journals 100 Gbaud On–Off Keying/Pulse Amplitude Modulation Links in C-Band for Short-Reach Optical Interconnects

2021 ◽  
Vol 11 (9) ◽  
pp. 4284
Author(s):  
Oskars Ozolins ◽  
Xiaodan Pang ◽  
Aleksejs Udalcovs ◽  
Richard Schatz ◽  
Sandis Spolitis ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Interconnects ◽  
High Speed ◽  
Extinction Ratio ◽  
Optical Power ◽  
Single Mode ◽  
Pulse Amplitude ◽  
Single Mode Fiber ◽  
Decision Feedback ◽  
Pulse Amplitude Modulation

We experimentally evaluate the high-speed on–off keying (OOK) and four-level pulse amplitude modulation (PAM4) transmitter’s performance in C-band for short-reach optical interconnects. We demonstrate up to 100 Gbaud OOK and PAM4 transmission over a 400 m standard single-mode fiber with a monolithically integrated externally modulated laser (EML) having 100 GHz 3 dB bandwidth with 2 dB ripple. We evaluate its capabilities to enable 800 GbE client-side links based on eight, and even four, optical lanes for optical interconnect applications. We study the equalizer’s complexity when increasing the baud rate of PAM4 signals. Furthermore, we extend our work with numerical simulations showing the required received optical power (ROP) for a certain bit error rate (BER) for the different combinations of the effective number of bits (ENOB) and extinction ratio (ER) at the transmitter. We also show a possibility to achieve around 1 km dispersion uncompensated transmission with a simple decision feedback equalizer (DFE) for a 100 Gbaud OOK, PAM4, and eight-level PAM (PAM8) link having the received power penalty of around 1 dB.

scholarly journals Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Younghyun Kim ◽  
Mitsuru Takenaka ◽  
Takenori Osada ◽  
Masahiko Hata ◽  
Shinichi Takagi
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Dispersion Effect ◽  
Optical Modulators ◽  
Carrier Absorption ◽  
Plasma Dispersion

scholarly journals Precise Optical Modulation and Its Application to Optoelectronic Device Measurement

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 160
Author(s):  
Tetsuya Kawanishi
Keyword(s):  
Frequency Response ◽  
High Speed ◽  
Extinction Ratio ◽  
Optoelectronic Devices ◽  
Optical Filters ◽  
Optical Modulation ◽  
Optical Frequency ◽  
Optical Modulators ◽  
Response Measurement ◽  
Mach Zehnder Modulator

Optoelectronic devices which play important roles in high-speed optical fiber networks can offer effective measurement methods for optoelectronic devices including optical modulators and photodetectors. Precise optical signal modulation is required for measurement applications. This paper focuses on high-speed and precise optical modulation devices and their application to device measurement. Optical modulators using electro-optic effect offers precise control of lightwaves for wideband signals. As examples, this paper describes frequency response measurement of photodetectors using high-precision amplitude modulation and wavelength domain measurement of optical filters using fast optical frequency sweep. Precise and high-speed modulation can be achieved by active trimming which compensates device structure imbalance due to fabrication error, where preciseness can be described by on-off extinction ratio. A Mach-Zehnder modulator with sub Mach-Zehnder interferometors can offer high extinction-ratio optical intensity modulation, which can be used for precise optoelectronic frequency response measurement. Precise modulation would be also useful for multi-level modulation schemes. To investigate impact of finite extinction ratio on optical modulation, duobinary modulation with small signal operation was demonstrated. For optical frequency domain analysis, single sideband modulation, which shifts optical frequency, can be used for generation of stimulus signals. Rapid measurement of optical filters was performed by using an optical sweeper consisting of an integrated Mach-Zehnder modulator for optical frequency control and an arbitrary waveform generator for generation of a source frequency chirp signal.

scholarly journals Hybrid silicon photonic devices with two-dimensional materials

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2295-2314 ◽  
Author(s):  
Jiang Li ◽  
Chaoyue Liu ◽  
Haitao Chen ◽  
Jingshu Guo ◽  
Ming Zhang ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Speed ◽  
High Efficiency ◽  
2D Materials ◽  
Optical Computing ◽  
Photonic Devices ◽  
Two Dimensional ◽  
Optical Modulators ◽  
Silicon Photonic ◽  
Hybrid Silicon

AbstractSilicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.

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