High-speed silicon photonic optical interconnects for cryogenic readout (Conference Presentation)

2020 ◽  
Author(s):  
Steven B. Estrella ◽  
Takako Hirokawa ◽  
Aaron Maharry ◽  
Daniel S. Renner ◽  
Clint L. Schow
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Silicon Photonic

scholarly journals Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
Juthika Basak ◽  
Ling Liao ◽  
Ansheng Liu ◽  
Doron Rubin ◽  
Yoel Chetrit ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Extinction Ratio ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Dispersion Effect ◽  
Optical Modulators ◽  
Mos Capacitor ◽  
Silicon Photonic ◽  
Made In

This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of 4 dB and a pn-diode-based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Practical Evaluation of Polymer Waveguides for High-Speed and Meter-Scale On-Board Optical Interconnects

2018 ◽  
Vol 36 (16) ◽  
pp. 3486-3493 ◽  
Author(s):  
Xiao Xu ◽  
Lin Ma ◽  
Marika Immonen ◽  
Xinhong Shi ◽  
Brandon W. Swatowski ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Polymer Waveguides ◽  
Practical Evaluation

100 Gbaud 4PAM Link for High Speed Optical Interconnects

2017 ◽  
Author(s):  
Oskars Ozolins ◽  
Xiaodan Pang ◽  
Aleksejs Udalcovs ◽  
Richard Schatz ◽  
Urban Westergren ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed

Silicon photonic wire circuits for on-chip optical interconnects

2008 ◽  
Author(s):  
William M. J. Green ◽  
Fengnian Xia ◽  
Solomon Assefa ◽  
Michael J. Rooks ◽  
Lidija Sekaric ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Silicon Photonic ◽  
On Chip ◽  
Photonic Wire

3D optical interconnects for high-speed interchip and interboard communications

Computer ◽  
1994 ◽  
Vol 27 (10) ◽  
pp. 27-37 ◽  
Author(s):  
A. Louri ◽  
Hongki Sung
Keyword(s):  
Optical Interconnects ◽  
High Speed
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