scholarly journals Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
Sibylle Dieckerhoff ◽  
Thies Wernicke ◽  
Christine Kallmayer ◽  
Stephan Guttowski ◽  
Herbert Reichl
Keyword(s):  
Solder Bump ◽  
Measurement Techniques ◽  
Power Mosfets ◽  
Switching Performance ◽  
Switching Losses ◽  
3D Packaging ◽  
Fast Power ◽  
Switching Characteristics ◽  
Evaluation Measurement ◽  
The Impact

The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.

2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS

2004 ◽  
Vol 14 (03) ◽  
pp. 879-883 ◽  
Author(s):  
SEI-HYUNG RYU ◽  
SUMI KRISHNASWAMI ◽  
MRINAL DAS ◽  
JAMES RICHMOND ◽  
ANANT ANANT AGARWAL ◽  
...  
Keyword(s):  
High Speed ◽  
Power Device ◽  
Switching Loss ◽  
Power Mosfets ◽  
Switching Performance ◽  
Switching Losses ◽  
Order Of Magnitude ◽  
Drain Bias ◽  
Silicon Device ◽  
High Speed Switching

Due to the high critical field in 4 H - SiC , the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4 H - SiC device. Therefore, the total drain charge and switching losses are much lower for the 4 H - SiC power device. A 2.3 kV, 13.5 mΩ-cm2 4 H - SiC power DMOSFET with a device area of 2.1 mm × 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4 H - SiC power DMOSFET. This suggests that the 4 H - SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

4H-SiC DMOSFETs for High Speed Switching Applications

2005 ◽  
Vol 483-485 ◽  
pp. 797-800 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
Anant K. Agarwal ◽  
...  
Keyword(s):  
High Speed ◽  
Power Device ◽  
Switching Loss ◽  
Power Mosfets ◽  
Switching Performance ◽  
Switching Losses ◽  
Order Of Magnitude ◽  
Drain Bias ◽  
Silicon Device ◽  
High Speed Switching

Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4H-SiC power DMOSFET. This suggests that the 4H-SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 756-760 ◽  
Author(s):  
Xue Qing Liu ◽  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
T. Paul Chow
Keyword(s):  
Unit Cell ◽  
Switching Loss ◽  
Calculation Methods ◽  
Cell Geometry ◽  
Zero Energy ◽  
Power Mosfets ◽  
Turn On ◽  
Switching Losses ◽  
The Impact ◽  
Refined Calculation

1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by comparing the turn-on and turn-off losses using refined calculation methods. Under optimum circuit conditions, two different novel unit cell designs each achieve lower switching losses than conventional designs. For all the designs, lossless turn-on is impossible but lossless turn-off is achievable under circuit and biasing conditions that produce sufficiently rapid gate slew.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

scholarly journals Thermal and Chemical Integrity of Ru Electrode in Cu/TaOx/Ru ReRAM Memory Cell

2019 ◽  
Vol 8 (12) ◽  
pp. N220-N233
Author(s):  
Mohammad Al-Mamun ◽  
Sean W. King ◽  
Marius Orlowski
Keyword(s):  
Memory Cell ◽  
Operating Conditions ◽  
Electrical Performance ◽  
Pt Electrode ◽  
Switching Performance ◽  
Inert Electrode ◽  
Work Function Difference ◽  
The Impact ◽  
Si Wafer

A good candidate for replacing the inert platinum (Pt) electrode in the well-behaved Cu/TaOx/Pt resistive RAM memory cell is ruthenium (Ru), already successfully deployed in the CMOS back end of line. We benchmark Cu/TaOx/Ru device against Cu/TaOx/Pt and investigate the impact of embedment of Cu/TaOx/Ru on two different substrates, Ti(20nm)/SiO2(730nm)/Si and Ti(20nm)/TaOx(30nm)/SiO2(730nm)/Si, on the cell's electrical performance. While the devices show similar switching performance at some operating conditions, there are notable differences at other operation regimes shedding light on the basic switching mechanisms and the role of the inert electrode. The critical switching voltages are significantly higher for Ru than for Pt devices and can be partly explained by the work function difference and different surface roughness of the inert electrode. The poorer switching properties of the Ru device are attributed to the degraded inertness properties of the Ru electrode as a stopping barrier for Cu+ ions as compared to the Pt electrode. However, some of the degraded electrical properties of the Ru devices can be mitigated by an improved integration of the device on the Si wafer. This improvement is attributed to the suppression of crystallization of Ru and its silicidation reactions that take place at elevated local temperatures, present mainly during the reset operation. This hypothesis has been corroborated by extensive XRD studies of multiple layer systems annealed at temperatures between 300K and 1173K.

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Measuring the Impact of Social Media use in the Public Sector

2012 ◽  
pp. 48-64 ◽  
Author(s):  
Inez Mergel
Keyword(s):  
Social Media ◽  
Public Sector ◽  
Measurement Techniques ◽  
Current Standard ◽  
The Public ◽  
Use Of Technology ◽  
Standard Practices ◽  
Media Applications ◽  
The Impact ◽  
Current Practices

Existing research on eGovernment performance has provided limited proof for the impact the use of technology has on citizen participation, engagement or generally satisfaction with government activities. Social media applications have the potential to improve responsiveness, reach, and efficiency, and even cost savings in government. The current Government 2.0 initiatives launched by all executive departments and agencies of the U.S. Federal Government as a response to President Obama’s Transparency and Open Government memo show that government agencies are implementing social media applications as additional information and communication channels. This chapter provides a comparison between traditional eGovernment measurement techniques and the current practices, highlighting the current practices of measuring social media impact in the public sector. The insights are based on data collected in 2010 from interviews with social media directors in the most innovative executive departments and agencies. The results show that the current standard practices mostly include quantitative impact measures instead of the qualitative measures needed to better understand the sentiments of citizens.

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