scholarly journals Modeling and Measurements of Novel Monolithic Filters

2008 ◽  
Vol 2008 ◽  
pp. 1-8
Author(s):  
Aly H. Aly ◽  
Badawy El-Sharawy ◽  
Adalbert Beyer
Keyword(s):  
Dielectric Constant ◽  
Quality Factor ◽  
Bandpass Filter ◽  
Narrow Band ◽  
Dielectric Materials ◽  
Ferroelectric Materials ◽  
Dielectric Substrates ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Multilayer Dielectric

This paper presents novel multilayer tuneable highQ-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size that makes them suitable for chip and package integration and narrow-band applications. The main focus was miniaturizing filters with coupled loops using multilayer dielectric substrates. A further goal was to increase the quality factor of these distributed filters by embedding high dielectric materials in a multilayer high- and low-k(dielectric constant) substrate that is supported by LTCC technology. An improved W-shape bandpass filter was proposed with a wide stopband and approximately 5% bandwidth.

Synthesis of Polymer-based ZnO/TiO2 Nanocomposites Flexible Sheets as High Dielectric Materials

2021 ◽  
Vol 63 (6) ◽  
pp. 879-890
Author(s):  
N. Kanwal ◽  
S. Pervaiz ◽  
A. Rasheed ◽  
M. Saleem ◽  
I. A. Khan
Keyword(s):  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

Advances in Precursor Development for CVD of Bariumcontaining Materials

1993 ◽  
Vol 335 ◽  
Author(s):  
Brian A. Vaartstra ◽  
R. A. Gardiner ◽  
D. C. Gordon ◽  
R. L. Ostrander ◽  
A. L. Rheingold
Keyword(s):  
State Of The Art ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Barium Strontium ◽  
Barium Compounds ◽  
Recent Developments ◽  
Metal Organic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Memory Applications

AbstractBarium titanate and barium-strontium titanate (BST) are high dielectric materials, likely to replace state-of-the-art capacitor materials for memory applications. Chemical Vapor Deposition (CVD) of these materials has been hampered, particularly by the lack of suitable precursors for barium. Although attempts to make volatile metal-organic barium compounds have met with some progress, a suitably stable, volatile barium source is still in demand. This paper will highlight recent developments at ATM, including syntheses and structures of polyamine and glycol ether adducts which have been designed to limit aggregation of barium diketonates, and stabilize the adducts with respect to ligand dissociation.

Electrode Structures for Integration of Ferroelectric or High Dielectric Constant Films in Semiconductor Devices

1998 ◽  
Vol 541 ◽  
Author(s):  
Alfred Grill
Keyword(s):  
Electrode Materials ◽  
High Dielectric Constant ◽  
Semiconductor Devices ◽  
Dielectric Materials ◽  
Ferroelectric Thin Films ◽  
Perovskite Materials ◽  
Perovskite Material ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Processing Steps

AbstractThe preparation of ferroelectric and high-dielectric perovskite materials, which is performed at high temperatures in oxidizing environments, imposes strong limitations on the choice of suitable electrode materials which can be used for integration of these materials with semiconductor devices. Because of the complex compositions of the perovskites and of some of the electrode materials the two can interact and result in the deterioration of the structures. The electrode materials have, therefore, to be used often in combination with suitable barriers which block diffusion of the elements of the perovskite and of the Si device and prevent interactions between the components. These requirements can result in complex, multilayered electrode/barrier structures that can affect the crystallization of the perovskite material and its electrical properties as well as the perovskite properties during subsequent processing steps (e.g. in forming gas anneals). The present paper will review the different electrode/barrier structures that have been proposed for integration of ferroelectric thin films with semiconductor devices and discuss their effects on the properties of ferroelectric and high-dielectric materials.

Improvement of quality factor of SrTiO 3 dielectric ceramics with high dielectric constant using Sm 2 O 3

2019 ◽  
Vol 102 (7) ◽  
pp. 3849-3853 ◽  
Author(s):  
Ting Luo ◽  
Xinxuan Shan ◽  
Jingwei Zhao ◽  
Hengheng Feng ◽  
Qi Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Quality Factor ◽  
High Dielectric Constant ◽  
Dielectric Ceramics ◽  
High Dielectric

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Effects of Calcination Temperature on the Phase Formation and Microstructure of Barium Zinc Tantalate

2010 ◽  
Vol 173 ◽  
pp. 61-66 ◽  
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Phase Formation ◽  
Raw Materials ◽  
Dielectric Materials ◽  
Particle Sizes ◽  
Complex Perovskite ◽  
Pure Phase ◽  
Microwave Electronic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Quality Factor Q

Nowadays, high dielectric materials are important materials in microwave electronic applications due to its properties that can provide high frequency range of an antenna. Barium Zinc Tantalate (BZT) is a complex perovskite structure that can produce high quality factor, Q. In this research, the effect of calcinations temperatures on phase formation, density and morphology of BZT powders were investigated. Based on the DTA result, the range of calcinations temperatures to be investigated were between 750°C to 1250°C. Results show that the maximum density of BZT occurred at 1150°C with 99.74% theoretical density. Samples calcined at below 1100°C still containing their raw materials such as BaCO3, ZnO and Ta2O5. The pure phase of BZT was formed at 1150°C when calcined for 1 hour. The lattice distortion of BZT increased when the calcinations temperature increased between 1000°C to 1150°C. The calcined powders show almost spherical morphology and agglomerated. The particle sizes of BZT increased from 0.716μm to 0.258μm when the temperature increased from 750°C to 1200°C.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Effect of Platinum Substitution on the Microstructures and Dielectric Relaxation of CaCu3Ti4O12 Ceramics

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
High Loss ◽  
Internal Barrier Layer Capacitor ◽  
High Dielectric

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)

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