Electrode Structures for Integration of Ferroelectric or High Dielectric Constant Films in Semiconductor Devices

1998 ◽  
Vol 541 ◽  
Author(s):  
Alfred Grill
Keyword(s):  
Electrode Materials ◽  
High Dielectric Constant ◽  
Semiconductor Devices ◽  
Dielectric Materials ◽  
Ferroelectric Thin Films ◽  
Perovskite Materials ◽  
Perovskite Material ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Processing Steps

AbstractThe preparation of ferroelectric and high-dielectric perovskite materials, which is performed at high temperatures in oxidizing environments, imposes strong limitations on the choice of suitable electrode materials which can be used for integration of these materials with semiconductor devices. Because of the complex compositions of the perovskites and of some of the electrode materials the two can interact and result in the deterioration of the structures. The electrode materials have, therefore, to be used often in combination with suitable barriers which block diffusion of the elements of the perovskite and of the Si device and prevent interactions between the components. These requirements can result in complex, multilayered electrode/barrier structures that can affect the crystallization of the perovskite material and its electrical properties as well as the perovskite properties during subsequent processing steps (e.g. in forming gas anneals). The present paper will review the different electrode/barrier structures that have been proposed for integration of ferroelectric thin films with semiconductor devices and discuss their effects on the properties of ferroelectric and high-dielectric materials.

Bottom Electrodes for High Dielectric Oxide Compounds: Effects on Crystallization of Lead Containing Ferroelectrics

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Grill ◽  
D. Beach ◽  
C. Smart ◽  
W. Kane
Keyword(s):  
Crystallization Behavior ◽  
Single Phase ◽  
Electrode Materials ◽  
Sol Gel ◽  
Dielectric Materials ◽  
Crystallographic Structure ◽  
X Ray ◽  
Integrated Devices ◽  
High Dielectric Materials ◽  
High Dielectric

AbstractSeveral conductive structures, which appeared to be usable as base electrodes for integrated devices based on high dielectric materials, have been annealed for 30 minutes in oxygen at 650 °C. Similar structures coated with lead-based ferroelectrics deposited by the sol-gel method have been annealed for 1 min in oxygen at higher temperatures. The materials have been characterized by Rutherford backscattering (RBS) and scanning electron microscopy (SEM) and the crystallographic structure of the ferroelectrics films has been determined by X-ray diffractometry (XRD).Only RuO2/Ru has been found to be suitable as an electrode, at temperatures not exceeding 650 °C. It has also been found that the electrode materials can strongly affect the crystallization behavior of the sol-gel ferroelectric films and the formation of single-phase perovskite layers.

Base electrodes for high dielectric constant oxide materials in silicon technology

1992 ◽  
Vol 7 (12) ◽  
pp. 3260-3265 ◽  
Author(s):  
A. Grill ◽  
W. Kane ◽  
J. Viggiano ◽  
M. Brady ◽  
R. Laibowitz
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Dielectric Constant ◽  
Dielectric Materials ◽  
Oxide Materials ◽  
Si Substrate ◽  
Conduction Path ◽  
Pure Metals ◽  
High Dielectric Materials ◽  
High Dielectric

Several conductive structures which appeared to be usable as base electrodes in VLSI capacitors based on high dielectric materials have been annealed in oxygen at 650 °C. The studied structures were Pt/TiN, Pt/Ta, Au/TiN, Ru, and RuO2/Ru, prepared under a variety of conditions. The structures have been studied by Rutherford backscattering (RBS) and Auger Electron Spectroscopy (AES). It was found that none of the pure metals, Pt, Au, or Ru, can prevent the diffusion of oxygen to the underlying layer and its oxidation, thus causing a possible break in the electrical conduction path to the silicon substrate. Of the investigated materials, in the thickness range ≤ 110 nm only the RuO2/Ru couple preserved its electrical connectivity to the Si substrate and prevented diffusion of silicon to the surface of the electrode.

Synthesis of Polymer-based ZnO/TiO2 Nanocomposites Flexible Sheets as High Dielectric Materials

2021 ◽  
Vol 63 (6) ◽  
pp. 879-890
Author(s):  
N. Kanwal ◽  
S. Pervaiz ◽  
A. Rasheed ◽  
M. Saleem ◽  
I. A. Khan
Keyword(s):  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

Advances in Precursor Development for CVD of Bariumcontaining Materials

1993 ◽  
Vol 335 ◽  
Author(s):  
Brian A. Vaartstra ◽  
R. A. Gardiner ◽  
D. C. Gordon ◽  
R. L. Ostrander ◽  
A. L. Rheingold
Keyword(s):  
State Of The Art ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Barium Strontium ◽  
Barium Compounds ◽  
Recent Developments ◽  
Metal Organic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Memory Applications

AbstractBarium titanate and barium-strontium titanate (BST) are high dielectric materials, likely to replace state-of-the-art capacitor materials for memory applications. Chemical Vapor Deposition (CVD) of these materials has been hampered, particularly by the lack of suitable precursors for barium. Although attempts to make volatile metal-organic barium compounds have met with some progress, a suitably stable, volatile barium source is still in demand. This paper will highlight recent developments at ATM, including syntheses and structures of polyamine and glycol ether adducts which have been designed to limit aggregation of barium diketonates, and stabilize the adducts with respect to ligand dissociation.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Effects of Calcination Temperature on the Phase Formation and Microstructure of Barium Zinc Tantalate

2010 ◽  
Vol 173 ◽  
pp. 61-66 ◽  
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Phase Formation ◽  
Raw Materials ◽  
Dielectric Materials ◽  
Particle Sizes ◽  
Complex Perovskite ◽  
Pure Phase ◽  
Microwave Electronic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Quality Factor Q

Nowadays, high dielectric materials are important materials in microwave electronic applications due to its properties that can provide high frequency range of an antenna. Barium Zinc Tantalate (BZT) is a complex perovskite structure that can produce high quality factor, Q. In this research, the effect of calcinations temperatures on phase formation, density and morphology of BZT powders were investigated. Based on the DTA result, the range of calcinations temperatures to be investigated were between 750°C to 1250°C. Results show that the maximum density of BZT occurred at 1150°C with 99.74% theoretical density. Samples calcined at below 1100°C still containing their raw materials such as BaCO3, ZnO and Ta2O5. The pure phase of BZT was formed at 1150°C when calcined for 1 hour. The lattice distortion of BZT increased when the calcinations temperature increased between 1000°C to 1150°C. The calcined powders show almost spherical morphology and agglomerated. The particle sizes of BZT increased from 0.716μm to 0.258μm when the temperature increased from 750°C to 1200°C.

Terahertz amplification in high-dielectric materials

2007 ◽  
pp. 802-804 ◽  
Author(s):  
Ka-Lo Yeh ◽  
Thomas Hornung ◽  
Joshua C. Vaughan ◽  
Keith A. Nelson
Keyword(s):  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

Improvements in high-field localized MRS of the medial temporal lobe in humans using new deformable high-dielectric materials

2010 ◽  
Vol 24 (7) ◽  
pp. 873-879 ◽  
Author(s):  
J.E.M. Snaar ◽  
W.M. Teeuwisse ◽  
M.J. Versluis ◽  
M.A. van Buchem ◽  
H.E. Kan ◽  
...  
Keyword(s):  
Temporal Lobe ◽  
Medial Temporal Lobe ◽  
High Field ◽  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric
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