scholarly journals High-Temperature SOI/SiC-Based DC-DC Converter Suite

2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Bradley A. Reese ◽  
Brice McPherson ◽  
Robert Shaw ◽  
Jared Hornberger ◽  
Roberto M. Schupbach ◽  
...  
Keyword(s):  
High Temperature ◽  
Duty Cycle ◽  
Feedback Loop ◽  
Design Strategy ◽  
Power Transformers ◽  
Power Switches ◽  
Gate Driver ◽  
Power Inductors ◽  
Effects Of Radiation ◽  
Over Time

A complete design strategy (mechanical and electrical) for a 25 W 28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The converter includes a high-temperature SOI-based PWM controller featuring 150 kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high-side gate driver. Several passive technologies were investigated for both control and power sections. Capacitor technologies were characterized over temperature and over time at 300C∘, power inductors designed and tested up to 350C∘, and power transformers designed and tested up to 500C∘. Northrop Grumman normally-off SiC JFETs were used as power switches and were characterized up to 250C∘. Efficiency and mass optimization routines were developed with the data gained from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results of the first prototype module are presented, with operation from 25C∘ up to an ambient temperature of 240C∘.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000388-000393
Author(s):  
Dominique Bergogne ◽  
Fabien Dubois ◽  
Christian Martin ◽  
Khalil El Falahi ◽  
Luong Viet Phung ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Power Converter ◽  
Nano Crystalline ◽  
Three Phase ◽  
Power Switches ◽  
Core Components ◽  
Power Inductors ◽  
Bus Voltage ◽  
Electro Magnetic

Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from −55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) filters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.

scholarly journals GaN Power Module with High Temperature Gate Driver and Insulated Power Supply

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000198-000205 ◽  
Author(s):  
Rémi Perrin ◽  
Dominique Bergogne ◽  
Christian Martin ◽  
Bruno Allard
Keyword(s):  
High Temperature ◽  
Internal Combustion Engines ◽  
High Efficiency ◽  
Input Voltage ◽  
Power Module ◽  
Switching Speed ◽  
Switching Losses ◽  
Power Switches ◽  
Gate Driver ◽  
Embedded Power

Emerging GaN power switches show advantages for integration in power modules at high temperature and/or high efficiency. These modules are good candidates for embedded power converters in harsh environment such as three phase inverters for Electro-Mechanical Actuators (EMA) in the vicinity of internal combustion engines. The power range is usually within 1 to 5 kW, extending sometimes up to 50 kW, using a high voltage DC bus (HVDC) that is usually comprised between 200 V and 600 V. For aeronautical applications, GaN power switches could challenge SiC transistors for their high switching speed, hence reduced switching losses, therefore lower embarked mass. For automotive applications, it is the relative promise for lower cost per Amp that is pushing this technology up. This is why a project joining GaN device conception, power module development and gate driver optimization using high temperature technologies was set-up. This paper presents the first practical results: a functional GaN power inverter-leg driven by a specific high temperature gate driver with signal and power insulation. This building block requires an auxiliary DC supply with a input voltage of 14 V or 28 V and an external PWM control signal. Current rating is 20 A and breakdown voltage is 200 V.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

PENERAPAN TIPOLOGI PASAR, ARSITEKTUR DAN PERILAKU GENERASI Z PADA PERANCANGAN PASAR MASA DEPAN DI GONDANGDIA

2021 ◽  
Vol 3 (1) ◽  
pp. 995
Author(s):  
Irwin Irwin ◽  
Doddy Yuono
Keyword(s):  
Public Space ◽  
Emerging Market ◽  
Design Strategy ◽  
Public Spaces ◽  
Future Market ◽  
Generation Z ◽  
Equal Space ◽  
And Behavior ◽  
Changes Over Time ◽  
Over Time

The pandemic caused by the corona virus has changed the lifestyle of humans, both directly and indirectly, especially generation Z in Jakarta. The way humans meet their primary needs also changes over time. Many of generation Z decide to shop online to meet their individual needs. Generation Z defines balance as one of the things that is seen in living life, including meeting their needs and interacting with others. The Future Market in Gondangdia exists as a forum that provides space for buying and selling transactions to be more interactive, creative, flexible, and in accordance with health protocols. Through dis-programming, combining creative buying and selling programs and public space as one unit in a design is one of the methods used in designing architectural programs. The combination of the two programs creates an equal space with alternate uses depending on time. The emerging market typology method and its relation to Z generation architecture and behavior become a design strategy in designing. This provides an innovative and interactive buying and selling space according to the needs of generation Z. Keywords: Buy and sell spaces; Public spaces; Future markets; Generation Z; Buy and sell; Dis-programming AbstrakPandemi yang disebabkan oleh virus korona telah mengubah gaya hidup manusia, baik secara langsung maupun tidak langsung, khususnya generasi Z di Jakarta. Cara manusia dalam memenuhi kebutuhan primernya pun berubah seiring berjalannya waktu. Banyak dari generasi Z memutuskan untuk berbelanja online untuk memenuhi kebutuhannya masing-masing. Generasi Z mendefinisikan keseimbangan sebagai salah satu hal yang dilihat dalam menjalani kehiduoan termasuk dalam memenuhi kebutuhannya dan berinteraksi dengan sesamanya. Melalui dis-programming memadukan program jual beli kreatif dan ruang publik sebagai satu kesatuan di dalam sebuah desain merupakan salah satu metodw yang digunakan dalam perancangan program arsitektur. Perpaduan kedua program tersebut menciptakan sebuah ruang yang sama dengan penggunaanya bergantian tergantung oleh waktu. Metode tipologi pasar yang berkembang dan kaitannya dengan arsitektur dan perilaku generasi Z menjadi strategi desain dalam merancang. Hal ini memberikan ruang jual beli yang inovatif dan interaktif sesuai dengan kebutuhan generasi Z.

An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET

2007 ◽  
Author(s):  
M. A Huque ◽  
R. Vijayaraghavan ◽  
M. Zhang ◽  
B. J. Blalock ◽  
L M. Tolbert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Gate Driver

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

scholarly journals Asparagine accumulation in chicory storage roots is controlled by translocation and feedback regulation of asparagine biosynthesis in leaves

2020 ◽  
Author(s):  
Emanoella Soares ◽  
Leonard Shumbe ◽  
Nicholas Dauchot ◽  
Christine Notté ◽  
Claire Prouin ◽  
...  
Keyword(s):  
Public Health ◽  
High Temperature ◽  
Feedback Loop ◽  
Reducing Sugars ◽  
Feedback Regulation ◽  
Negative Feedback Loop ◽  
List Type ◽  
Storage Roots ◽  
Crop Species ◽  
Selection Of

SummaryThe presence of acrylamide (AA), a potentially carcinogenic and neurotoxic compound, in food has become a major concern for public health. AA in plant-derived food mainly arises from the reaction of the amino acid asparagine (Asn) and reducing sugars during processing of foodstuffs at high temperature.Using a selection of genotypes from the chicory germplasm we performed Asn measurements in storage roots and leaves to identify genotypes contrasting for Asn accumulation. We combined molecular analysis and grafting experiments to show that leaf to root translocation controls asparagine biosynthesis and accumulation in chicory storage roots.We could demonstrate that Asn accumulation in storage roots depends on Asn biosynthesis and transport from the leaf, and that a negative feedback loop by Asn on CiASN1 expression impacts Asn biosynthesis in leaves.Our results provide a new model for asparagine biosynthesis in root crop species and highlight the importance of characterizing and manipulating asparagine transport to reduce AA content in processed plant-based foodstuffs.

Negative emotionality and peer status: Evidence for bidirectional longitudinal influences during the elementary school years

2021 ◽  
pp. 014303432110635
Author(s):  
Hans Bengtsson ◽  
Åsa Arvidsson ◽  
Beatrice Nyström
Keyword(s):  
Longitudinal Study ◽  
Feedback Loop ◽  
Structural Models ◽  
Negative Emotionality ◽  
Peer Status ◽  
Second Grade ◽  
Late Childhood ◽  
Peer Ratings ◽  
Longitudinal Associations ◽  
Over Time

Prior research indicates that high negative emotionality in combination with low peer status is conducive of clinically identified problems in childhood. This three-wave longitudinal study examined how negative emotionality and peer status are linked over time in middle and late childhood. Participants were recruited from second grade ( n = 90, mean age = 8.85) and fourth grade ( n = 119, mean age = 10.81) and were followed across a period of 2 years. Cross-lagged structural models examining concurrent and longitudinal associations between teacher-reported negative emotionality and peer ratings of likability were analyzed separately for externalizing emotion (anger) and internalizing emotion (sadness and fear). Both analyses provided support for a conceptual model in which high negative emotionality lowers peer status, and low peer status, in turn, through a feedback loop, increases negative emotionality over time. Bidirectional influences are interpreted as reflecting a transactional process involving the effects of negative emotionality on social behavior. The findings highlight the need for active efforts to help children with high negative emotionality gain acceptance from classmates.

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