scholarly journals Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

2007 ◽  
Vol 2007 ◽  
pp. 1-5
Author(s):  
Shiu-Ko JangJian ◽  
Ying-Lang Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Surface Element ◽  
Substrate Effect ◽  
Element Analysis ◽  
Cu Substrate

The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS). The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS) is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and theCuOxbonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced byNF3ddissociation in the RPS and that induces the drastic decrease on PCR.

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

Electrical and Optical Characteristics of Two-Dimensional MoS2 Film Grown by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 20 (6) ◽  
pp. 3563-3567 ◽  
Author(s):  
Donghwan Kim ◽  
Yonghee Jo ◽  
Dae Hyun Jung ◽  
Jae Suk Lee ◽  
TaeWan Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Layer Structure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Surface Element ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Atomically thin molybdenum disulfide (MoS2) films were synthesized on a SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS2 film exhibits an electron mobility of 1.3×10−4 cm2/V·s and an on/off ratio of 6.5×102 at room temperature.

Thermal Oxidation of Amorphous Silicon-Boron Alloy

1987 ◽  
Vol 105 ◽  
Author(s):  
W. M. Lau ◽  
R. Yang ◽  
B. Y. Tong ◽  
S. K. Wong
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Thermal Oxidation ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
X Ray ◽  
Pressure Chemical

AbstractThe thermal oxidation of amorphous silicon-boron alloy (prepared by low pressure chemical vapor deposition) with boron contents ranged from 0–40% at a temperature range of 25- 700 °C has been carried out. Crystalline silicon and polycrystalline boron have also been studied for comparison purposes. The resultant thin oxide overlayers were characterized by X-ray photoelectron spectroscopy. It was found that both the oxidation of Si and of B are enhanced by mixing of the two elements. The oxidation of boron is significantly slower than silicon. During oxidation of silicon-boron alloy, preferential oxidation of silicon occurs at the oxide/bulk interface and the silicon oxide overlayer advances into the bulk faster than the boron oxide.

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

2014 ◽  
Vol 92 (7/8) ◽  
pp. 593-596 ◽  
Author(s):  
D.A. Spee ◽  
C.H.M. van der Werf ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Glycidyl Methacrylate ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Moisture Barrier ◽  
X Ray

We deposited a silicon nitride (SiNx)–polymer hybrid multilayer moisture barrier in a hot wire chemical vapor deposition (HWCVD) process, entirely below 100 °C. The polymer, poly(glycidyl methacrylate) (PGMA), was deposited by initiated chemical vapour deposition and the SiNx in a dedicated HWCVD reactor. Line profile investigation of our barrier structures by cross-sectional scanning transmission electron microscopy and energy dispersive X-ray spectrometry reveals that, upon deposition of SiNx on top of our polymer layer, an intermediate layer of silicon oxide (SiOx) like material is formed. X-ray photoelectron spectroscopy measurements confirm the presence of this material and indicate the epoxy rings in the PGMA material open upon heating (to 100 °C) and exposure to atomic hydrogen and amine species in the HWCVD process. The oxygen atoms subsequently react with silicon and nitrogen containing radicals to form SiOxNy. The interlayer turns out to be highly beneficial for interlayer adhesion and this is considered to be one of the reasons for the excellent barrier properties of our multilayer.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Sign in / Sign up

Export Citation Format

Share Document