scholarly journals Studies on the Electrical and Optical Properties of Magnesium Phthalocyanine Thin Films

2004 ◽  
Vol 1 (5) ◽  
pp. 231-236
Author(s):  
T. G. Gopinathan ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Visible Region ◽  
Absolute Temperature ◽  
Post Deposition Annealing ◽  
Glass Substrates ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Uv Visible ◽  
Post Deposition

Thin films of Magnesium Phthalocyanine (MgPc) are prepared by thermal evaporation technique at a base pressure of 10-5m.bar on thoroughly cleaned glass substrates kept at different constant temperatures. Films of thickness 2400 A.U. coated at room temperature are subjected to post deposition annealing in air by keeping them in a furnace at different constant temperatures, for one hour. The electrical conductivity studies are conducted in the temperature range 300 K to 525 K. The electrical conductivity is plotted as a function of absolute temperature. The conduction mechanism is observed to be hopping. The thermal activation energy is calculated in different cases and is observed to vary with substrate temperature and annealing temperature. A phase change is observed due to post-deposition annealing at around 523 K. The optical absorption studies are done in the UV-Visible region. The optical band gap energies of the samples are calculated.

scholarly journals Effects of Temperature on the Structural and Optical Preperties of AgGaSe2 Thin Films

1970 ◽  
Vol 33 (2) ◽  
pp. 179-188
Author(s):  
MRA Bhuiyan ◽  
DK Saha ◽  
SM Firoz Hasan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Visible Region ◽  
Wavelength Region ◽  
Band Gap Energy ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Glass Substrates ◽  
Academy Of Sciences ◽  
Post Deposition

In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stacked elemental layer (SEL) deposition technique in vacuum. The films were prepared at the post-deposition annealing temperature from 100 to 350°C for 15 min duration. The atomic composition of the films was measured by energy dispersive analysis of X-ray (EDAX) method. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) has been employed to study the structure of the films. The structures of the films are found to be polycrystalline in nature. The lattice parameters, grain size, strain and dislocation densities of the films were calculated. Optical characteristics of the films were ascertained by spectrophotometer in the photon wavelength ranging between 300 and 2500 nm. The transmittance was found to increase with the increase of annealing temperature. The transmittance falls steeply with decreasing wavelength. It revealed that AGS films have considerable absorption throughout the wavelength region from 400 to 800 nm. The optical band gap energy has been evaluated. Two possible direct allowed and direct forbidden transitions have been observed for all the AGS films in visible region. The former varied from 1.67 to 1.75 eV and the later from 2.05 to 2.08 eV, depending on the post-deposition annealing temperature of the films. DOI: 10.3329/jbas.v33i2.4101 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 2, 179-188, 2009

scholarly journals The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

2005 ◽  
Vol 2 (3) ◽  
pp. 171-177 ◽  
Author(s):  
P. S. Raghupathi ◽  
Joseph George ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Deposition Rate ◽  
Indium Tin Oxide ◽  
Visible Region ◽  
Band Gap Energy ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Evaporation Technique

Indium tin oxide (ITO) thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

Preparation and Character Measurements of ZrO2 Films for RF Magnetron Sputtering

2012 ◽  
Vol 490-495 ◽  
pp. 3358-3361
Author(s):  
Tai Long Gui ◽  
Ji Ying Wen ◽  
Jin Shuo Mei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Transmission Rate ◽  
Research Result ◽  
Rf Magnetron Sputtering ◽  
Post Deposition Annealing ◽  
Zro2 Film ◽  
Glass Substrates ◽  
Post Deposition

ZrO2 thin films were deposited on glass substrates via RF magnetron sputtering technique and post-deposition annealing treatment.The films transmittance and surface structure were investigated by means of Ultraviolet spectrophotometer, AFM and XRD. The effect of annealing on the optical properties of the films has been studied as well.The research result indicates that the size of ZrO2 film grain obviously gets bigger, the surface is more smooth and transmission rate increases after 800°C, annealing 30min.

Structural, Morphological, Optical, and Electrical Characterization of Fluorine Doped Tin Oxide (FTO) Thin Films Synthesized by PSP

2019 ◽  
Vol 286 ◽  
pp. 64-71 ◽  
Author(s):  
Raquel Ramírez-Amador ◽  
Gregorio Flores-Carrasco ◽  
Salvador Alcántara-Iniesta ◽  
Julio Rodríguez González ◽  
Ogilver García-Teniza ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Maximum Value ◽  
Uv Visible

This paper reports a study of Fluorine-doped Tin Oxide (FTO) thin films deposited by the Pneumatic Spray Pyrolysis (PSP) technique. The films were deposited on glass substrates at 450 °C with a ~125 nm thickness, using an F/Sn ratio of 0, 0.2, 0.35, 0.5, 0.65 and 0.85, respectively. The samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible Spectroscopy and Hall Effect techniques, respectively. XRD results revealed that the FTO thin films were polycrystalline with a tetragonal rutile-type structure and had preferential orientations along (110) planes. SEM studies showed that FTO thin film morphology was totally affected by an increased F/Sn ratio. The calculated grain mean sizes were 10-35 nm. Optical transmittance spectra of the films showed a high transparency of approximately 80-90 % in the visible region. The optical gap of FTO thin films was in a 3.70-4.07 eV range. Electrical and optical properties of these films were studied as a function of the F/Sn ratio. Therefore, the optimal FTO (F/Sn = 0.5) films revealed a maximum value of the figure of merit approximately 8.05 × 10-3 (Ω-1) at λ = 400 nm. The high-conducting and transparent-elaborating FTO thin films may have several promising applications due to its multifunctional properties.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

scholarly journals Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

2009 ◽  
Author(s):  
Wei-En Fu ◽  
Yong-Qing Chang ◽  
Yi-Ching Chen ◽  
Erik M. Secula ◽  
David G. Seiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

scholarly journals Effect of Post-deposition Annealing in a Nitrogen Atmosphere on the Properties of SnO2 Thin Films

2017 ◽  
Vol 30 (1) ◽  
pp. 1-5
Author(s):  
Young-Hwan Song ◽  
Tae-Young Eom ◽  
Sung-Bo Heo ◽  
Jun-Ho Kim ◽  
Daeil Kim
Keyword(s):  
Thin Films ◽  
Nitrogen Atmosphere ◽  
Post Deposition Annealing ◽  
Sno2 Thin Films ◽  
Post Deposition

scholarly journals Epoxy/Silicone Blend Loaded with N-Doped CNT Composites: Study on the Optoelectronic Properties

2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Ousama Ifguis
Keyword(s):  
Thin Films ◽  
Urbach Energy ◽  
Optical Transition ◽  
Sol Gel ◽  
Visible Range ◽  
Visible Spectroscopy ◽  
Glass Substrates ◽  
Optical Gap ◽  
Ito Glass ◽  
Uv Visible

Thin films of epoxy/silicone loaded with N-CNT were prepared by a method of sol-gel and deposited on ITO glass substrates at room temperature. The properties of the loaded monolayer samples (0.00, 0.07, 0.1, and 0.2 wt% N-CNTs) were analyzed by UV-visible spectroscopy. The transmittance for the unloaded thin films is 88%, and an average transmittance for the loaded thin film is about 42 to 67% in the visible range. The optical properties were studied from UV-visible spectroscopy to examine the transmission spectrum, optical gap, Tauc verified optical gap, and Urbach energy, based on the envelope method proposed by Swanepoel (1983). The results indicate that the adjusted optical gap of the film has a direct optical transition with an optical gap of 3.61 eV for unloaded thin films and 3.55 to 3.19 eV for loaded thin films depending on the loading rate. The optical gap is appropriately adapted to the direct transition model proposed by Tauc et al. (1966); its value was 3.6 eV for unloaded thin films and from 3.38 to 3.1 eV for loaded thin films; then, we determined the Urbach energy which is inversely variable with the optical gap, where Urbach’s energy is 0.19 eV for the unloaded thin films and varies from 0.43 to 1.33 eV for the loaded thin films with increasing rate of N-CNTs. Finally, nanocomposite epoxy/silicone N-CNT films can be developed as electrically conductive materials with specific optical characteristics, giving the possibility to be used in electrooptical applications.

Sign in / Sign up

Export Citation Format

Share Document