scholarly journals Backward Propagated Capacitance Model for Register Transfer Level Power Estimation

VLSI Design ◽  
2001 ◽  
Vol 12 (2) ◽  
pp. 221-231
Author(s):  
Jung Yun Choi ◽  
Young Hwan Kim ◽  
Kyoung-Rok Cho

We present a new approach to the power modeling of functional modules, referred to as the backward propagated capacitance model, for estimating the power consumption of VLSI systems that are described at the register transfer level (RTL). To construct the proposed model, we investigate the effect of the module's internal capacitance on power consumption at the gate level. Then, we store the effect in a library in terms of the equivalent input capacitance of the module. The equivalent input capacitance is used to compute the module's power without the lower level elaboration during the power analysis of the RTL system. In the experiment using benchmark functional modules, the proposed model showed the absolute modeling error of 1.39% on average. For the benchmark RTL systems, the proposed model exhibited the absolute error of 3.04% in power estimation on average. If signal characteristics deviate from the modeling condition, the modeling error may increase. Experimental results show that the modeling accuracy can be improved greatly by using a simple compensation method.

2017 ◽  
Vol 14 (1) ◽  
pp. 277-283
Author(s):  
V Rajmohan ◽  
O. Uma Maheswari

In modern days of VLSI design, speedy operations and low-power consumption is a key requirement for any circuits. When it comes to multipliers, the power efficient multiplier plays an important role. The main aim of this work is to develop the system with faster and less power multiplier for an efficient process by using Baugh-Wooley multipliers. The optimized Baugh-Wooley multiplier consumes least power, area and produces less delay. The proposed architecture is 193× times faster than Conventional array multiplier in the practical applications and 213× times faster than a conventional Baugh-Wooley multiplier. The Improved Baugh-Wooley multiplier consumes the power of 09.02 mW and area of 52426 μm2.


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