A Percolative Approach to Reliability of Thin Film
Interconnects and Ultra-thin Dielectrics
Keyword(s):
Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random resistor network at a given temperature and its degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.
2009 ◽
Vol 626
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pp. 367-393
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2000 ◽
Vol 411
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pp. 325-350
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1992 ◽
Vol 67
(1-2)
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pp. 113-121
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1970 ◽
Vol 28
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pp. 544-545
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2020 ◽
Vol 31
(9)
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pp. 6948-6955
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