Current distributions in a two-dimensional random-resistor network

1992 ◽  
Vol 67 (1-2) ◽  
pp. 113-121 ◽  
Author(s):  
E. Duering ◽  
R. Blumenfeld ◽  
D. J. Bergman ◽  
A. Aharony ◽  
M. Murat
Keyword(s):  
Two Dimensional ◽  
Random Resistor Network ◽  
Resistor Network ◽  
Current Distributions

scholarly journals A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 363-367
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
R. Cataldo ◽  
G. De Nunzio
Keyword(s):  
Thin Film ◽  
Steady State ◽  
Stochastic Approach ◽  
Physical Parameters ◽  
Two Dimensional ◽  
Steady State Condition ◽  
Random Resistor Network ◽  
Resistor Network ◽  
Thin Dielectrics ◽  
Unified Description

Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random resistor network at a given temperature and its degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.

Minimum current in the two-component random resistor network

1992 ◽  
Vol 46 (19) ◽  
pp. 12137-12141 ◽  
Author(s):  
K. W. Yu ◽  
P. Y. Tong
Keyword(s):  
Random Resistor Network ◽  
Resistor Network ◽  
Two Component

A Percolative Approach to Electromigration Modelling

2000 ◽  
Vol 612 ◽  
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
F. Fantini ◽  
A. Scorzoni ◽  
...  
Keyword(s):  
Stochastic Model ◽  
Normal Distribution ◽  
Early Stage ◽  
Random Resistor Network ◽  
Resistor Network ◽  
Metallic Interconnects ◽  
Compositional Effects ◽  
The Times ◽  
Log Normal ◽  
Log Normal Distribution

AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.

scholarly journals Resistance distributions of the random resistor network near the percolation threshold

1990 ◽  
Vol 41 (7) ◽  
pp. 4610-4618 ◽  
Author(s):  
A. B. Harris ◽  
Yigal Meir ◽  
Amnon Aharony
Keyword(s):  
Percolation Threshold ◽  
Random Resistor Network ◽  
Resistor Network

Effective conductivity of particulate polymer composite electrolytes using random resistor network method

2011 ◽  
Vol 199-200 ◽  
pp. 44-53 ◽  
Author(s):  
Sergiy Kalnaus ◽  
Adrian S. Sabau ◽  
Sarah Newman ◽  
Wyatt E. Tenhaeff ◽  
Claus Daniel ◽  
...  
Keyword(s):  
Polymer Composite ◽  
Effective Conductivity ◽  
Composite Electrolytes ◽  
Random Resistor Network ◽  
Resistor Network ◽  
Network Method
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