scholarly journals Resonant Tunneling in the Quantum Hydrodynamic Model

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 201-210 ◽  
Author(s):  
Carl L. Gardner
Keyword(s):  
Quantum Interference ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Voltage Curve ◽  
Current Voltage Curve ◽  
Multiple Regions ◽  
Qhd Model ◽  
Quantum Hydrodynamic

The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR.Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.

scholarly journals A Comparison of Resonant Tunneling Based on Schrödinger's Equation and Quantum Hydrodynamics

VLSI Design ◽  
2002 ◽  
Vol 15 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Naoufel Ben Abdallah ◽  
Olivier Pinaud ◽  
Carl L. Gardner ◽  
Christian Ringhofer
Keyword(s):  
Schrödinger Equation ◽  
Resonant Tunneling ◽  
Schrodinger Equation ◽  
Resonant Peak ◽  
Tunneling Diode ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Qhd Model ◽  
Quantum Hydrodynamic

Smooth quantum hydrodynamic (QHD) model simulations of the current–voltage curve of a resonant tunneling diode at 300K are compared with that predicted by the mixed-state Schrödinger equation approach. Although the resonant peak for the QHD simulation occurs at 0.15V instead of the Schrödinger equation value of 0.2V, there is good qualitative agreement between the current–voltage curves for the two models, including the predicted peak current values.

scholarly journals Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 143-146 ◽  
Author(s):  
Carl L. Gardner ◽  
Christian Ringhofer
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Model Simulation ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Model Simulations ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Qhd Model ◽  
Quantum Hydrodynamic

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

scholarly journals Theory and Simulation of the Smooth Quantum Hydrodynamic Model

VLSI Design ◽  
1999 ◽  
Vol 9 (4) ◽  
pp. 351-355
Author(s):  
Carl L. Gardner
Keyword(s):  
Hydrodynamic Model ◽  
Differential Resistance ◽  
Classical Electron ◽  
Model Simulations ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Qhd Model ◽  
Quantum Hydrodynamic ◽  
Quantum Semiconductor ◽  
Classical Hydrodynamic

The “smooth” quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O(ħ2) QHD model. In addition, smooth QHD simulations of a classical electron shock wave are presented which agree with classical hydrodynamic model simulations and which do not exhibit the spurious dispersive oscillations of the O(ħ2) QHD model.

ON QUANTUM HYDRODYNAMIC MODELS FOR ELECTRONIC TRANSPORT IN NANOSCALE SEMICONDUCTOR DEVICES

2010 ◽  
Vol 24 (04n05) ◽  
pp. 401-409
Author(s):  
EUGENIA TULCAN-PAULESCU ◽  
DAN COMǍNESCU ◽  
MARIUS PAULESCU
Keyword(s):  
Numerical Simulation ◽  
Electronic Transport ◽  
Resonant Tunneling ◽  
Semiconductor Devices ◽  
Resonant Tunneling Diode ◽  
Hydrodynamic Models ◽  
Tunneling Diode ◽  
Quantum Hydrodynamic ◽  
Ballistic Diode

This article deals with quantum hydrodynamic models (QHD) for electronic transport in semiconductor devices. Numerical simulation of ballistic diode and resonant tunneling diode is discussed. Based on overall results, it can be concluded that the considered QHD models have remarkable abilities to express the refinements of electronic transport in nanodevices.

scholarly journals Quantum Hydrodynamic Simulation of Hysteresis in the Resonant Tunneling Diode

1995 ◽  
Vol 117 (2) ◽  
pp. 274-280 ◽  
Author(s):  
Zhangxin Chen ◽  
Bernardo Cockburn ◽  
Carl L. Gardner ◽  
Joseph W. Jerome
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Hydrodynamic Simulation ◽  
Tunneling Diode ◽  
Quantum Hydrodynamic

scholarly journals Electrical characteristics of silicon differential photoreceivers

2021 ◽  
Vol 2052 (1) ◽  
pp. 012014
Author(s):  
V V Gavrushko ◽  
A S Ionov ◽  
O R Kadriev ◽  
V A Lastkin
Keyword(s):  
Differential Resistance ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Similar Shape ◽  
Voltage Curve ◽  
Current Voltage ◽  
Reverse Branch ◽  
Current Voltage Curve ◽  
Surface Leakage ◽  
Additional Channel

Abstract The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi4Ti3O12 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 88-90
Author(s):  
Y.H. Cai ◽  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
W.K. An ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Bi3.25Dy0.75Ti3O12 (BDT) and Bi3.25Gd0.75Ti3O12 (BGT) ceramics were investigated. The current-voltage curve of the BGT sample exhibits a negative differential resistance behavior, whereas that of the BDT sample exhibits a simple ohmic behavior. The impedance spectrum of the BDT and BGT samples indicate that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Both BDT and BGT samples exhibit randomly oriented and plate-like morphology.

THEORETICAL INVESTIGATIONS OF DELTA-DOPED INTERBAND RESONANT TUNNELING DIODE

1993 ◽  
Vol 07 (22) ◽  
pp. 1429-1437
Author(s):  
HANYU SHENG ◽  
SOO-JIN CHUA
Keyword(s):  
Quantum Interference ◽  
Resonant Tunneling ◽  
Mean Free Path ◽  
Resonant Tunneling Diode ◽  
Distribution Functions ◽  
Phase Correlation ◽  
Band Theory ◽  
Tunneling Diode ◽  
Theoretical Investigations ◽  
Velocity Distribution Functions

DC properties of the delta-doped interband resonant tunneling diode are studied by a simple semiclassical model based on the use of the velocity distribution functions fitted with the barrier reflection and transmission probabilities. Quantum interference is included by introducing a phase correlation function between the incoming waves. The effect of scattering on the quantum well is considered by the mean free path. The two-band theory is used to treat the interaction between the conduction band and the light-hole valence band. The results show that the peak-to-valley current ratio can reach up to as high as 20 at room temperature for GaAs material.

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