scholarly journals First-Order Optical Phonon Processes in Amorphous Clusters

1994 ◽  
Vol 16 (2) ◽  
pp. 109-112 ◽  
Author(s):  
M. A. Grado Caffaro ◽  
M. Grado Caffaro
Keyword(s):  
Optical Absorption ◽  
Optical Phonon ◽  
Far Infrared ◽  
Infrared Range ◽  
First Order ◽  
Structural Disorders ◽  
Amorphous Sic ◽  
Small Clusters ◽  
Dynamical Disorder

Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small clusters in the context of dynamical disorder are considered. Average values of the absorption contributions due to both dynamical and structural disorders are introduced. In particular, an equation for the spectrum due to dynamical disorder in amorphous SiC is presented.

A MODEL FOR OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE BY USING AN OPERATIONAL TECHNIQUE

1999 ◽  
Vol 13 (25) ◽  
pp. 919-923 ◽  
Author(s):  
M. A. GRADO-CAFFARO ◽  
M. GRADO-CAFFARO
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Structural Disorder ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Operational Technique ◽  
Dynamical Disorder

By considering a sample of amorphous GaAs with a small zone of dynamical disorder, an expression for the optical absorption coefficient and phonon density of states in the low region of the far-infrared range is obtained. To get to this end, absorption corresponding to structural disorder is neglected.

scholarly journals A Short Theoretical Note on Optical Absorption of Amorphous Gallium Arsenide in the Infrared Range

1998 ◽  
Vol 20 (3) ◽  
pp. 139-142 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Gallium Arsenide ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Structural Disorders ◽  
Theoretical Results

An approach to determine the optical absorption coefficient of amorphous GaAs in the far infrared range is developed. Results from this approach are compared with experiment and with other theoretical results. In our formulation, contributions corresponding to both dynamical and structural disorders are taken into consideration.

MAXIMUM DYNAMICAL DISORDER IN AMORPHOUS GaAs

1994 ◽  
Vol 08 (03) ◽  
pp. 169-172 ◽  
Author(s):  
M.A. GRADO CAFFARO ◽  
M. GRADO CAFFARO
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Density Of States ◽  
Far Infrared ◽  
Conduction Band Edge ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Low Frequencies ◽  
Dynamical Disorder

Maximum dynamical disorder in amorphous gallium arsenide is investigated in a special way. In particular, this maximum disorder refers to distance and it is investigated in the context of optical absorption at very low frequencies in the far-infrared range when the photon energy is larger than 2Ec, Ec being the energy at the conduction band edge. Absorption coefficient is calculated and compared with experimental work. Phonon density of states is also evaluated.

A Semi-Quantitative Analysis of Far-Infrared Absorption in Dynamically Disordered Gallium Arsenide

2003 ◽  
Vol 17 (13n14) ◽  
pp. 783-787 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Experimental Data ◽  
Quantitative Analysis ◽  
Optical Absorption ◽  
Density Of States ◽  
Infrared Absorption ◽  
Mathematical Expression ◽  
Far Infrared ◽  
Structural Disorder ◽  
Infrared Range ◽  
Electronic Density

A mathematical expression for the coefficient of optical absorption in amorphous GaAs referred to the far-infrared range is obtained by neglecting the spectrum contribution corresponding to structural disorder. In addition, our results are compared with experimental data and several aspects related to the electronic density of states are discussed.

scholarly journals A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors

1998 ◽  
Vol 20 (3) ◽  
pp. 143-145 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Optical Absorption ◽  
Density Of States ◽  
Far Infrared ◽  
Structural Disorder ◽  
Amorphous Semiconductors ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Vibrational Density Of States ◽  
Vibrational Density

Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.

A SPECIAL MODEL ON OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE

1999 ◽  
Vol 13 (17) ◽  
pp. 611-615 ◽  
Author(s):  
M. A. GRADO-CAFFARO ◽  
M. GRADO-CAFFARO
Keyword(s):  
Experimental Data ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Structural Disorder ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Electronic Density ◽  
Special Model ◽  
Theoretical Results

The optical absorption coefficient of amorphous GaAs for the far-infrared range is calculated. Results from this calculation are compared with experimental data and with other theoretical results. In our approach, spectrum contribution corresponding to structural disorder is neglected. Moreover, total electronic density of states is determined.

Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field

JETP Letters ◽  
2018 ◽  
Vol 108 (5) ◽  
pp. 329-334 ◽  
Author(s):  
L. S. Bovkun ◽  
A. V. Ikonnikov ◽  
V. Ya. Aleshkin ◽  
S. S. Krishtopenko ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fourier Transform ◽  
Quantum Wells ◽  
Far Infrared ◽  
Fourier Transform Spectroscopy ◽  
Infrared Range
Sign in / Sign up

Export Citation Format

Share Document